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Infineon establishing first high-volume fab for GaN power semiconductors on 300mm wafers in Europe
What happened
Infineon is establishing the world's first high-volume manufacturing facility for gallium nitride (GaN) power semiconductors on 300mm wafers in Europe. As part of the project, the firm will invest about €1.1bn in its existing cleanroom facilities at the site in Villach, Austria by 2034. Production is scheduled to start by the end of 2027.
Impact and signal
Medium impactImpact score: 60/100
Affected components and suppliers
gallium nitride (GaN) power semiconductors300mm wafers
Infineon Technologies AG
GaN300mmFabInfineonAustriaVillach
Source and time
Source: Semiconductor Today · 10/27/2026 · View original source
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