Samsung to convert last 2D NAND line to those for 1c DRAM
Samsung is permanently halting 2D NAND production at its Hwaseong Line 12 (80-100K wpm) in March and converting it to a 1c DRAM end fab. This move aligns with its strategy to shift legacy capacity to advanced processes and boost 1c DRAM output for HBM4 and server applications. Watch: Supply reduction for legacy NAND is offset by China expansion, while increased 1c DRAM capacity could ease HBM bottlenecks.
- Related manufacturers
- Samsung Electronics
- Impact score
- 60 / 100, medium impact