NuAxiSemiconductor trade intelligence

Samsung to convert last 2D NAND line to those for 1c DRAM

What happened

Samsung is permanently halting 2D NAND production at its Hwaseong Line 12 (80-100K wpm) in March and converting it to a 1c DRAM end fab. This move aligns with its strategy to shift legacy capacity to advanced processes and boost 1c DRAM output for HBM4 and server applications. Watch: Supply reduction for legacy NAND is offset by China expansion, while increased 1c DRAM capacity could ease HBM bottlenecks.

Impact and signal

Medium impactImpact score: 60/100

Affected components and suppliers

2D NANDDRAM1c DRAMHBM

Samsung Electronics

capacity-conversionlegacy-process-endadvanced-node-focus

Source and time

Source: The Elec · 2/25/2026 · View original source

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Samsung to convert last 2D NAND line to those for 1c DRAM

What happened

Impact and signal

Affected components and suppliers

Source and time

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