Cooling for High-Performance Modules, Hydrogen Plasma Passivation for GaN HEMTs, Why Application Fit Matters More than Technology: Power Electronics Week Insights

What happened

In this Power Electronics News weekly round-up, Infineon is reported to be advancing 300-mm SiC production: the source states the 300mm process could deliver 2.3x more chips per wafer, supporting future SiC manufacturing scale-up and supply; this is a planned expansion, and the source does not indicate it has been implemented or that capacity results have been achieved. Other component items in the round-up include: onsemi unveiled the fourth-generation EliteSiC M4 SiC platform (claimed higher efficiency, lower losses and greater flexibility); Nexperia added GaN FETs and 750V SiC MOSFETs to extend its power portfolio; Toshiba added a 20-device CTZ series of compact Zener diodes providing 5.6V to 36V overvoltage protection in packages occupying 81% less PCB area; Diodes added Hall-effect sensors and IntelliFET switches for automotive plus dual-channel isolated gate drivers; Silanna introduced 12- to 16-bit ADCs with sampling rates up to 250 Msps in BGA packages; and TDK launched the CCG60 isolated DC-DC converter providing up to 60W, 93% efficiency in a 1 × 1-inch package. Technical articles cover cooling for high-performance power modules, etch-free hydrogen plasma passivation for GaN HEMTs (passivating p-GaN), and why application fit matters more than technology.

Impact and signal

Affected components and suppliers

Source and time

Source: Power Electronics News · 11/13/2026 · View original source