Nexperia Adds GaN and SiC Devices for High-Efficiency Power Conversion

What happened

Nexperia is expanding its gallium nitride (GaN) and silicon carbide (SiC) power semiconductor portfolios with new devices targeting industrial, automotive, and computing applications. On the GaN side, new ultra-low-resistance GaN FETs cover 18 V to 200 V: the flagship GANE0R8-100QTM is a 100 V device with typical RDS(on) of 0.75 mΩ in a 3 mm × 5 mm PQFN package and is now available, along with five other products spanning 25 V to 200 V with resistance values down to 0.37 mΩ; two further devices, including the 18 V GANE0R3-015QTL with typical RDS(on) of 0.32 mΩ, are scheduled for Q1 2027. On the SiC side, Nexperia has introduced 750 V SiC trench MOSFETs for EV charging infrastructure, photovoltaic inverters, industrial drives, AI and high-performance computing power supplies, onboard chargers, and DC-DC converters, and the family also introduces TOLL packaging to Nexperia's portfolio; the 750 V devices are available now in industrial and AEC-Q101-qualified automotive versions. The source does not state the cause (this is a product portfolio expansion announcement, involving no price movement or capacity figures).

Impact and signal

Affected components and suppliers

Source and time

Source: Power Electronics News · 11/11/2026 · View original source