(PR) Infineon Starts World's First 300-Millimeter Power Silicon Carbide (SiC) Wafer Production

What happened

Infineon announced it has successfully processed 300-millimeter silicon carbide wafers into functional power devices at its fab in Villach, Austria, making it the first company to achieve this innovation milestone in a full-scale semiconductor fab environment. The achievement was realized by utilizing existing silicon (Si) manufacturing equipment, and Infineon said it reflects its focus on a comprehensive portfolio of high-performance SiC power semiconductors and ensuring long-term supply. According to the source, chip production on 300 mm wafers is technologically more advanced and significantly more efficient than 200 mm wafers, since the larger wafer diameter offers 2.3 times more chips per wafer.

Impact and signal

Affected components and suppliers

Source and time

Source: TechPowerUp · 11/9/2026 · View original source