Gelsinger-backed Nagare Labs’ Z2RAM promises SRAM speed at DRAM density

What happened

Nagare Labs, a Georgia Tech spinout backed by Pat Gelsinger, says its capacitorless Z2RAM can put SRAM-speed memory at DRAM density directly on top of AI chips. The founders' papers show that, tested up to 85 degrees Celsius, a boosted three-transistor cell holds data for over 300 seconds, versus only 100 milliseconds for a conventional three-transistor design at 85°C, while a 2025 self-aligned three-transistor cell measured over 1,000 seconds of retention at 25°C. Nagare projects Gen 1 with six stacked layers at 5x SRAM density, 14x DRAM speed, and 3x less read energy than SRAM, but the company declined to share measured retention, latency, or energy figures, so its headline numbers remain projections. Datta said 'Where we are is literally lab prototypes'; sampling of Z2RAM tiles is targeted within four years and production shipments, if they arrive, within the next decade. Nagare currently has no fab and is looking for an R&D fab partner as well as packaging partners; Playground Global led the startup's $5 million round.

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Source and time

Source: Tom's Hardware · 11/6/2026 · View original source