NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Jul 12

18:33Impact score 45
Innoscience claims victory over EPC’s ’508 patent in ITC’s initial decision
Innoscience claims a favorable initial determination at the US ITC, defeating the entirety of EPC's '508 patent. This legal victory removes a potential import ban threat for Innoscience's GaN power devices in the US market. Watch: This reduces supply chain disruption risk for Innoscience's customers but may intensify competition in the GaN power component segment.
GaN-on-Si Power DevicesInnoscience, Efficient Power Conversion Corp (EPC)Semiconductor TodayPolicy/Regulation

Thu, Jul 11

15:24Impact score 15
Luminus launches high-efficacy mid-power MP-5050 LEDs
Luminus Devices launched its MP-5050 series mid-power LEDs, claiming an efficacy of 233 lumens per watt at 4000K CCT and 70 CRI. This product targets outdoor and industrial lighting applications with improved performance. Neutral: This is a standard product refresh with no immediate impact on supply, demand, or pricing for the broader LED component market.
Mid-Power LEDsLuminus Devices IncSemiconductor TodayProduct Launch

Tue, Jul 9

17:46Impact score 15
US ITC finds key EPC patents valid and foundational patent infringed by Innoscience
The US ITC has upheld key GaN patents held by EPC and found them infringed by Innoscience. This is the third favorable ruling for EPC's intellectual property in recent months. Watch: The ruling strengthens EPC's market position and could disrupt Innoscience's US supply chain, potentially tightening supply for competing GaN power devices.
GaN FETGaN Power ICEfficient Power Conversion Corp, InnoscienceSemiconductor TodayTechnical

Mon, Jul 8

16:40Impact score 60
Aixtron’s Q2 order intake driven by silicon carbide and gallium nitride power electronics
Aixtron reported preliminary Q2 2024 order intake of approximately €176 million, driven predominantly by demand for equipment used in manufacturing silicon carbide (~58%) and gallium nitride (~29%) power electronics. This sustained high order level indicates continued strong capital investment in the SiC/GaN power semiconductor supply chain. Bullish: Strong equipment orders signal robust future production capacity expansion for SiC/GaN power devices, supporting long-term demand for these components.
SiC Power ElectronicsGaN Power ElectronicsAixtron SESemiconductor TodayFinancial/Earnings

Wed, Jul 3

16:56Impact score 10
Luminus adds SFT-03X RGB LED chipset to projection product portfolio
Luminus Devices Inc added the SFT-03X RGB LED chipset to its projection portfolio. This addition enables compact projection engines for embedded consumer and industrial applications. Neutral: New product launch with no immediate supply chain impact.
LEDProjection LEDLuminus Devices IncSemiconductor TodayProduct Launch

Thu, Jun 27

17:18Impact score 25
Vishay introduces 16 new Gen 3 1200V SiC Schottky diodes spanning 5–40A
Vishay Intertechnology has launched 16 new Gen 3 1200V silicon carbide Schottky diodes with current ratings from 5A to 40A. The MPS design aims to improve efficiency and reliability in power switching applications. This is a standard product launch that expands options but does not signal an immediate shift in supply, demand, or pricing for the broader SiC component market.
SiC Schottky DiodesVishay Intertechnology IncSemiconductor TodayProduct Launch
00:12Impact score 10
SK keyfoundry intensifying efforts to develop GaN for power electronics
SK keyfoundry is intensifying development of 650V GaN HEMT technology, aiming to complete development by year-end. This is part of the broader industry trend towards wide-bandgap semiconductors for power efficiency in applications like EVs and data centers. Neutral: This is a long-term R&D milestone with no immediate impact on supply, demand, or pricing of existing power components.
GaN HEMTPower SemiconductorsSK keyfoundrySemiconductor TodayTechnical

Tue, Jun 25

18:10Impact score 58
Riber receives order for MBE 49 GaN production system
Riber S.A. received an order for an MBE 49 production system from an Asian industrial customer for delivery in 2025, intended to boost GaN optoelectronic component capacity. The system will support increased production for consumer fast chargers, power supplies, and automotive research. Bullish: This signals future supply expansion for GaN wafers/devices, potentially easing long-term constraints for power electronics, but the 2025 delivery date delays the impact.
GaN Epitaxial WafersGaN Power DevicesRiber S.A.Semiconductor TodayCapacity Change
17:10Impact score 60
Wolfspeed’s Mohawk Valley 200mm SiC fab reaches 20% utilization
Wolfspeed's 200mm SiC fab in Mohawk Valley has reached 20% wafer start utilization, marking a key step in its capacity ramp. This progress aims to address the structural shortage of silicon carbide power devices driven by EV and industrial demand. Bearish: Increased supply from a major SiC manufacturer could ease long-term pricing pressure and alleviate shortages, impacting spot market dynamics.
SiC MOSFETSiC Power DeviceWolfspeed IncSemiconductor TodayCapacity Change
00:24Impact score 10
Riber receives order for MBE 49 production system
Riber S.A. received an order for an MBE 49 production system from an Asian industrial customer, scheduled for delivery in 2025, to increase capacity for GaAs photodiodes and quantum dot laser-based optical amplifiers. This reflects ongoing investment in specialized compound semiconductor manufacturing equipment for optoelectronic applications. Neutral: This is a single equipment order with a long lead time, unlikely to cause immediate supply/demand shifts or price impacts for the broader semiconductor market.
GaAs PhotodiodesQuantum Dot LasersRiber S.A.Semiconductor TodayTechnical

Mon, Jun 17

20:42Impact score 8
Fraunhofer IAF presents 1200V GaN HEMTs at PCIM Europe
Fraunhofer IAF presented its development of lateral and vertical GaN transistors with blocking voltages above 1200V at PCIM Europe 2024. This represents a research milestone for high-voltage GaN power devices, which are targeted at applications like electric vehicles and industrial systems. The trading impact is neutral, as this is a non-commercial R&D presentation with no immediate effect on supply, demand, or pricing of existing components.
GaN HEMTGaN Power TransistorsFraunhofer IAFSemiconductor TodayTechnical

Thu, Jun 13

15:42Impact score 10
Element Six and Orbray partner to deliver high-quality wafer-scale single-crystal synthetic diamond
Element Six (De Beers Group) and Japan's Orbray have announced a strategic collaboration to develop and deliver high-quality, wafer-scale single-crystal synthetic diamond. This partnership aims to combine E6's CVD diamond material expertise with Orbray's precision manufacturing capabilities for advanced applications. Neutral: This is a long-term R&D milestone for a specialized material with no immediate, direct impact on electronic component supply, pricing, or trader decisions.
Synthetic Diamond WafersElement Six, Orbray Co LtdSemiconductor TodayTechnical

Wed, Jun 12

22:17Impact score 12
Crystal IS achieved 99% usable area on 100mm bulk AlN substrate
Crystal IS, an Asahi Kasei subsidiary, has achieved serial production of 100mm bulk AlN substrates with 99% usable area, a yield improvement for UVC LED manufacturing. This technical milestone enhances substrate availability for next-generation UV LEDs, RF, and power devices. Neutral: This is a long-term R&D achievement with no immediate, quantifiable impact on supply, demand, or pricing for traders.
UVC LEDAlN SubstrateCrystal IS Inc, Asahi KaseiSemiconductor TodayTechnical
17:42Impact score 25
CGD launches P2 series of ICeGaN power ICs
CGD launched its P2 series of ICeGaN power ICs with RDS(on) as low as 25mΩ. The new parts target high-power applications like data centers and inverters. Neutral impact on current spot prices as this is a new product introduction.
GaN Power ICCambridge GaN Devices LtdSemiconductor TodayProduct Launch

Tue, Jun 11

21:43Impact score 15
VisIC presenting new Gen 1+ 650V/6mΩ and Gen 2 650V/5mΩ GaN HEMTs at PCIM
VisIC Technologies is showcasing its new Gen 1+ 650V/6mΩ and Gen 2 650V/5mΩ GaN HEMT power devices, along with high-current power modules, at PCIM Europe 2024. The announcement targets applications in electric vehicles, AI data centers, and renewable energy. Neutral: This is a standard product launch with no immediate, quantifiable impact on supply, demand, or pricing for existing electronic components.
GaN HEMTPower ModulesVisIC Technologies LtdSemiconductor TodayProduct Launch
18:35Impact score 15
EPC launches 50V, 8.5mΩ EPC2057 GaN FET
EPC has launched the EPC2057, a 50V, 8.5mΩ GaN FET targeting high-power USB-C applications in consumer electronics, automotive, and eMobility. This is a routine product introduction aimed at capturing demand in fast-growing end markets. Neutral: This launch represents incremental technology advancement but does not signal a material shift in supply, demand, or pricing for GaN components.
GaN FETEfficient Power Conversion Corp (EPC)Semiconductor TodayProduct Launch

Fri, Jun 7

00:21Impact score 15
CGD partner with Qorvo to develop reference design and evaluation kit showcasing GaN for motor control applications
Fabless firm Cambridge GaN Devices (CGD) is partnering with Qorvo to develop a reference design and evaluation kit showcasing GaN technology for BLDC and PMSM motor control applications. The collaboration aims to accelerate the adoption of CGD's ICeGaN power ICs in motor systems. Neutral: This is a long-term technology development milestone with no immediate impact on component supply, pricing, or inventory.
GaN Power ICsMotor Control ICsCambridge GaN Devices Ltd, Qorvo IncSemiconductor TodayTechnical

Wed, Jun 5

23:50Impact score 15
CGD demos new ICeGaN 650V GaN ICs at PCIM Europe
Cambridge GaN Devices (CGD) demonstrated its new 650V ICeGaN GaN ICs at PCIM Europe 2024, targeting applications from motor drives to compact chargers. This is a product showcase from a fabless firm, indicating ongoing R&D and portfolio expansion in the GaN power semiconductor space. Neutral: This is a standard product demonstration with no immediate impact on supply, demand, or pricing for existing components.
GaN Power ICsGaN-on-Si TransistorsCambridge GaN Devices LtdSemiconductor TodayProduct Launch
16:07Impact score 45
Geely and ST set up joint lab and sign multi-year SiC device supply deal
STMicroelectronics and Geely Auto Group have signed a multi-year silicon carbide (SiC) supply agreement and established a joint lab. This deepens their existing cooperation to support Geely's EV electrification strategy. Bullish: This long-term deal locks in significant future demand for ST's SiC devices, tightening supply availability for the broader spot market.
SiC MOSFETSTMicroelectronicsSemiconductor TodayPartnership/M&A

Tue, Jun 4

21:46Impact score 10
CGD adds new ICeGaN power IC packages with enhanced thermal performance
Fabless firm CGD announced two new package variants for its ICeGaN family, offering enhanced thermal performance and simplified inspection. These DFN-style packages are designed to be rugged and reliable.
关注
新产品发布，短期供需影响有限。
GaN power ICsCambridge GaN Devices LtdSemiconductor TodayProduct Launch

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Jul 12

Innoscience claims victory over EPC’s ’508 patent in ITC’s initial decision

Thu, Jul 11

Luminus launches high-efficacy mid-power MP-5050 LEDs

Tue, Jul 9

US ITC finds key EPC patents valid and foundational patent infringed by Innoscience

Mon, Jul 8

Aixtron’s Q2 order intake driven by silicon carbide and gallium nitride power electronics

Wed, Jul 3

Luminus adds SFT-03X RGB LED chipset to projection product portfolio

Thu, Jun 27

Vishay introduces 16 new Gen 3 1200V SiC Schottky diodes spanning 5–40A

SK keyfoundry intensifying efforts to develop GaN for power electronics

Tue, Jun 25

Riber receives order for MBE 49 GaN production system

Wolfspeed’s Mohawk Valley 200mm SiC fab reaches 20% utilization

Riber receives order for MBE 49 production system

Mon, Jun 17

Fraunhofer IAF presents 1200V GaN HEMTs at PCIM Europe

Thu, Jun 13

Element Six and Orbray partner to deliver high-quality wafer-scale single-crystal synthetic diamond

Wed, Jun 12

Crystal IS achieved 99% usable area on 100mm bulk AlN substrate

CGD launches P2 series of ICeGaN power ICs

Tue, Jun 11

VisIC presenting new Gen 1+ 650V/6mΩ and Gen 2 650V/5mΩ GaN HEMTs at PCIM

EPC launches 50V, 8.5mΩ EPC2057 GaN FET

Fri, Jun 7

CGD partner with Qorvo to develop reference design and evaluation kit showcasing GaN for motor control applications

Wed, Jun 5

CGD demos new ICeGaN 650V GaN ICs at PCIM Europe

Geely and ST set up joint lab and sign multi-year SiC device supply deal

Tue, Jun 4

CGD adds new ICeGaN power IC packages with enhanced thermal performance

Chip Teardown Lab

Component price indexNPI, vs. prior period

Trending components