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Fraunhofer IAF presents 1200V GaN HEMTs at PCIM Europe
What happened
Fraunhofer IAF presented its development of lateral and vertical GaN transistors with blocking voltages above 1200V at PCIM Europe 2024. This represents a research milestone for high-voltage GaN power devices, which are targeted at applications like electric vehicles and industrial systems. The trading impact is neutral, as this is a non-commercial R&D presentation with no immediate effect on supply, demand, or pricing of existing components.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
GaN HEMTGaN Power Transistors
Fraunhofer IAF
R&Dtechnology-milestonePCIM
Source and time
Source: Semiconductor Today · 6/17/2024 · View original source
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