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SK keyfoundry intensifying efforts to develop GaN for power electronics

What happened

SK keyfoundry is intensifying development of 650V GaN HEMT technology, aiming to complete development by year-end. This is part of the broader industry trend towards wide-bandgap semiconductors for power efficiency in applications like EVs and data centers. Neutral: This is a long-term R&D milestone with no immediate impact on supply, demand, or pricing of existing power components.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

GaN HEMTPower Semiconductors
SK keyfoundry
rd-milestonefoundrywide-bandgap

Source and time

Source: Semiconductor Today · 6/26/2024 · View original source

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