NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Oct 25

00:44Impact score 45
ZF said to be withdrawing from Wolfspeed’s German silicon carbide device fab project
Automotive supplier ZF Friedrichshafen intends to withdraw from its planned $185 million investment in Wolfspeed's $3 billion SiC device fab project in Germany. The move introduces uncertainty to the project's funding and timeline for expanding SiC power device capacity, which is critical for the EV market. Watch: The potential delay or scaling back of this capacity expansion could tighten the long-term supply outlook for SiC devices, but the immediate trading impact is uncertain pending Wolfspeed's response.
Silicon Carbide (SiC) Power DevicesWolfspeed IncSemiconductor TodayPartnership/M&A

Mon, Oct 21

17:33Impact score 15
Riber secures order for MBE 49 GaN system
Riber S.A. secured an order for an MBE 49 GaN production system from a European customer for 2025 delivery, configured for plasma-assisted GaN epitaxy on 200mm silicon wafers. The system is intended to enhance the customer's capacity for producing GaN components for next-generation displays. Neutral: This is a single, forward-looking equipment order with no immediate impact on component supply, pricing, or inventory.
GaN-on-Si Epitaxial WafersGaN Power DevicesRiber S.A.Semiconductor TodayTechnical
16:54Impact score 7
Northeast Microelectronics Coalition Hub awards $1m to 13 companies
The Northeast Microelectronics Coalition Hub awarded $1.04 million in grants to 13 small companies through its PROPEL program, funded by the CHIPS Act. The funding aims to help startups transition microelectronics projects from lab concepts to validated production devices. Neutral: This is a long-term R&D initiative with no immediate impact on component supply, demand, or pricing for traders.
Semiconductor Today

Wed, Oct 16

23:29Impact score 5
Wolfspeed nominates Thomas Seifert and Woody Young to board
Wolfspeed has nominated Thomas Seifert and Woody Young to its board of directors, with the appointments to be voted on at the December 2024 shareholder meeting. This is a routine governance update with no immediate operational or financial implications for the company's silicon carbide production or supply. Neutral: The board nomination has no direct impact on supply, demand, or pricing for SiC materials and devices.
SiC WafersSiC Power DevicesWolfspeed IncSemiconductor Today

Tue, Oct 15

20:42Impact score 45
Wolfspeed announces $750m in proposed funding from US CHIPS Act plus $750m from investment group
Wolfspeed has secured a non-binding PMT for up to $750M in direct CHIPS Act funding and an additional $750M in private financing. This capital is intended to support the expansion of its silicon carbide materials and device manufacturing capacity in the US. Watch: The funding strengthens Wolfspeed's long-term supply position but does not indicate an immediate change in SiC market supply or pricing.
SiC WafersSiC Power SemiconductorsWolfspeed IncSemiconductor TodayPolicy/Regulation

Fri, Oct 11

18:11Impact score 8
Ohio State selects Taiyo Nippon Sanso MOCVD and HVPE platforms for R&D of nitride and oxide materials and devices
Ohio State University has purchased Taiyo Nippon Sanso's SR4000HT-RR-LV MOCVD and HVPE reactors for advanced materials research. This is a single-unit R&D equipment sale to an academic institution, not a commercial production order. Neutral: This transaction has no immediate impact on semiconductor supply, demand, or pricing.
MOCVD EquipmentHVPE EquipmentTaiyo Nippon Sanso CorpSemiconductor TodayTechnical

Tue, Oct 1

02:06Impact score 15
ASM launches dual-chamber PE2O8 single-wafer 8”-wafer silicon carbide epi system
ASM International launched its dual-chamber PE2O8 single-wafer SiC epitaxy system at ICSCRM 2024, targeting the power device segment with claims of low defectivity and high uniformity. This equipment introduction aims to support the broader adoption of SiC technology by improving throughput and lowering cost of ownership. Neutral: This is a long-term capacity enabler for SiC wafer supply, with no immediate impact on trading prices or component availability.
SiC Epitaxy EquipmentSiC WafersASM International N.V.Semiconductor TodayProduct Launch

Wed, Sep 25

19:07Impact score 20
Toshiba’s launches 1200V third-generation SiC Schottky barrier diodes
Toshiba Electronic Devices & Storage Corporation has launched a series of ten new 1200V third-generation SiC Schottky barrier diodes for industrial applications, with shipments already started. This is an expansion of their existing SiC product portfolio targeting markets like PV inverters and EV charging stations. Neutral: This is a routine product line expansion with no immediate indication of capacity constraints or supply shifts that would impact spot market pricing for SiC components.
SiC Schottky Barrier DiodesToshiba Electronic Devices & Storage CorporationSemiconductor TodayProduct Launch

Tue, Sep 24

20:35Impact score 15
TRUMPF presenting next-gen VCSEL devices for LPO and CPO at ECOC
TRUMPF Photonic Components is showcasing next-generation VCSEL technology for LPO and CPO applications at ECOC 2024. This represents an R&D milestone aimed at future datacom market demands, such as AI data centers. Neutral: This is a forward-looking technology demonstration with no immediate impact on current supply, demand, or pricing for electronic components.
VCSELOptical TransceiversTRUMPF Photonic Components GmbHSemiconductor TodayTechnical

Mon, Sep 23

16:58Impact score 15
MACOM showcasing high-speed analog connectivity solutions at ECOC
MACOM is showcasing its latest high-speed analog connectivity solutions at the ECOC 2024 trade show. This is a routine product demonstration event for the company's portfolio of RF, microwave, analog, and optical semiconductors. Neutral: The announcement is a standard marketing activity with no immediate impact on supply, demand, or pricing for traders.
High-Speed Analog ICsOptical SemiconductorMACOM Technology Solutions IncSemiconductor TodayProduct Launch

Thu, Sep 12

15:20Impact score 8
JEDEC publishes test method for addressing switching energy loss associated with output capacitance hysteresis
JEDEC has published a new standard, JEP200, defining test methods for measuring switching energy loss in GaN and SiC power devices. The standard was developed by JEDEC's JC-70 committee, whose membership has grown from 23 to over 80 companies since 2017. Neutral: This is a technical standardization milestone with no immediate impact on supply, demand, or pricing for power semiconductors.
GaN Power DevicesSiC Power DevicesSemiconductor TodayTechnical

Mon, Sep 9

22:00Impact score 45
ROHM and UAES sign long-term supply agreement for SiC power devices
ROHM Semiconductor has signed a long-term supply agreement with Chinese automotive supplier UAES for SiC power devices. This secures a major, stable demand channel for ROHM's SiC products in the fast-growing Chinese EV market. Watch: This agreement locks in future demand, potentially tightening supply for other buyers and supporting long-term SiC pricing, but lacks immediate price action details.
SiC Power DevicesROHM Semiconductor, United Automotive Electronic Systems Co Ltd (UAES)Semiconductor TodayPartnership/M&A

Tue, Sep 3

18:55Impact score 60
Wolfspeed accelerating shift of device fabrication to 200mm Mohawk Valley Fab, while mulling closure of 150mm Durham device fab
Wolfspeed is accelerating the shift of its device fabrication to its 200mm Mohawk Valley fab and considering closing its 150mm Durham device fab. This strategic move aims to increase production efficiency and scale for its SiC and GaN power and RF products. Watch: The transition could temporarily constrain supply during the ramp-up but is ultimately bullish for long-term capacity and cost structure.
Silicon Carbide (SiC) MOSFETsGallium Nitride (GaN) RF DevicesWolfspeed IncSemiconductor TodayCapacity Change

Thu, Aug 29

15:23Impact score 15
EPC Space unveils dynamic cross-reference tool for rad-hard MOSFET device replacement
EPC Space has launched a cross-reference tool to simplify the replacement of radiation-hardened MOSFETs up to 350V from competitors. The tool is designed for engineers in the space and harsh-environment electronics sector, aiming to reduce design time. Neutral: This is a software tool launch that facilitates component substitution but does not directly alter supply, demand, or pricing dynamics for the underlying semiconductors.
Rad-Hard MOSFETsGallium Nitride (GaN) Power TransistorsEPC Space LLCSemiconductor TodayProduct Launch

Tue, Aug 13

19:58Impact score 10
VisIC adds Daimler/Mercedes Benz veteran Wolfgang Wondrak as consultant
VisIC Technologies, a fabless GaN power semiconductor firm, has hired former Daimler/Mercedes-Benz executive Wolfgang Wondrak as a consultant. This move aims to strengthen VisIC's automotive industry expertise and market positioning. Neutral: This is a strategic personnel addition with no immediate impact on component supply, pricing, or production capacity.
GaN Power TransistorsVisIC Technologies LtdSemiconductor TodayPartnership/M&A

Tue, Aug 6

00:29Impact score 25
Navitas’ GaNFast ICs power expanded Samsung Galaxy smartphone portfolio
Navitas Semiconductor announced Samsung has expanded adoption of its GaNFast power ICs beyond flagship Galaxy S-series phones to include mainstream Galaxy A-series and the latest Galaxy Z Fold6 and Flip6 models. This represents a broadening design win for Navitas's gallium nitride power technology within a major smartphone OEM's portfolio. Neutral: This confirms ongoing demand for GaN power ICs in mobile devices but does not indicate a near-term supply shock or price movement for the components.
GaN Power ICsNavitas SemiconductorSemiconductor TodayProduct Launch

Mon, Jul 29

20:14Impact score 10
VisIC partners with Heraeus and PINK to deliver high-power-density BEV power modules
VisIC Technologies has partnered with Heraeus Electronics and PINK GmbH to develop a high-power-density BEV power module utilizing D3GaN technology. This collaboration aims to leverage Heraeus's packaging materials and PINK's soldering systems to advance GaN transistor applications in electric vehicles. Watch VisIC's progress in commercializing GaN power modules for the EV market.
GaN power modulesD3GaNVisIC Technologies, Heraeus Electronics and 3 totalSemiconductor TodayPartnership/M&A

Thu, Jul 25

16:44Impact score 8
German researchers demo practical implementation of AlN-based value chain for power semiconductors
German researchers demonstrated a practical implementation of an aluminum nitride (AlN)-based value chain for power semiconductors, positioning it as a future ultrawide-bandgap material beyond current SiC and GaN. This represents a long-term R&D milestone in semiconductor materials science with no immediate commercial production or supply chain impact. Neutral: This is a distant technology preview with no direct effect on current component pricing or availability for traders.
Power SemiconductorsWide-Bandgap SemiconductorsUltrawide-Bandgap SemiconductorsSemiconductor TodayTechnical

Wed, Jul 17

23:02Impact score 5
MACOM dedicates Lowell Campus to John Ocampo
MACOM has renamed its Lowell, MA campus after the late John Ocampo. The campus houses corporate HQ, R&D centers, and a wafer fab. This is a ceremonial event with no direct impact on production, supply, or pricing.
RFMicrowaveAnalogMACOM Technology Solutions IncSemiconductor Today

Tue, Jul 16

20:34Impact score 55
Nexperia orders Aixtron G10-SiC and G10-GaN systems for Hamburg fab
Nexperia has placed a follow-up order for Aixtron's G10-SiC CVD and G10-GaN MOCVD systems to expand its 200mm wafer production of SiC and GaN power devices at its Hamburg fab. This investment signals a continued push to scale up production capacity for these wide-bandgap semiconductors. Bearish: This capacity expansion, while specific to Nexperia, contributes to the broader industry trend of increasing supply for SiC and GaN power devices, potentially easing long-term supply constraints and putting downward pressure on future pricing.
SiC MOSFETGaN HEMTNexperia, Aixtron SESemiconductor TodayCapacity Change

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Oct 25

Mon, Oct 21

Wed, Oct 16

Tue, Oct 15

Fri, Oct 11

Tue, Oct 1

Wed, Sep 25

Tue, Sep 24

Mon, Sep 23

Thu, Sep 12

Mon, Sep 9

Tue, Sep 3

Thu, Aug 29

Tue, Aug 13

Tue, Aug 6

Mon, Jul 29

Thu, Jul 25

Wed, Jul 17

Tue, Jul 16

Chip Teardown Lab

Component price indexNPI, vs. prior period

Trending components