Arizona State University developing transistors made of diamond and boron nitride
Arizona State University researchers are exploring diamond and boron nitride as materials for next-generation power transistors, which could theoretically outperform current SiC and GaN solutions. This is a long-term R&D project focused on fundamental material science, with no commercial product timeline announced. Neutral: This academic research has no immediate impact on the supply, demand, or pricing of existing power semiconductor components.
- Impact score
- 8 / 100, low impact