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Selective-area p-doping by Mg implant then UHP anneal yields kV-class, low-ON-resistance vertical GaN junction barrier Schottky
What happened
Researchers from NC State, Adroit Materials, and the Polish Academy of Sciences have developed a selective-area p-doping technique using Mg implantation and UHP annealing for vertical GaN junction barrier Schottky diodes, targeting kV-class and low ON-resistance performance. This is an academic/industry R&D milestone focused on improving the efficiency of high-power GaN devices. Neutral: This is a long-term technology development with no immediate impact on trading, supply, or pricing for existing electronic components.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
GaN Power Devices
Adroit Materials Inc
R&Dtechnology-milestone
Source and time
Source: Semiconductor Today · 9/7/2022 · View original source
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