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Novel Crystal Technology reports first inverted gallium oxide DI-MOS transistor
What happened
Novel Crystal Technology reported the first basic operation of a gallium oxide inverted DI-MOSFET with a 1kV breakdown voltage and 6V threshold voltage at a Japanese academic symposium. This is part of a long-term R&D program funded by the Japanese government since 2019, aiming to commercialize β-Ga2O3 transistors. Neutral: This is a pure R&D milestone with no immediate impact on commercial supply, demand, or pricing for existing power semiconductor components.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
Gallium Oxide (β-Ga2O3) Power Devices
Novel Crystal Technology Inc
R&Dpower-semiconductorswide-bandgap
Source and time
Source: Semiconductor Today · 9/28/2022 · View original source
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