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Arizona State University developing transistors made of diamond and boron nitride
What happened
Arizona State University researchers are exploring diamond and boron nitride as materials for next-generation power transistors, which could theoretically outperform current SiC and GaN solutions. This is a long-term R&D project focused on fundamental material science, with no commercial product timeline announced. Neutral: This academic research has no immediate impact on the supply, demand, or pricing of existing power semiconductor components.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
Power Transistors
R&DWide BandgapNext-Gen Materials
Source and time
Source: Semiconductor Today · 1/2/2023 · View original source
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