NuAxi Stream - Real-Time Semiconductor Intelligence

Wed, Jan 28

16:30Impact score 10
La Luce Cristallina launches CMOS-compatible oxide pseudo-substrate
La Luce Cristallina launched a CMOS-compatible oxide pseudo-substrate enabling epitaxial strontium titanate films on 200mm silicon wafers. This bridges academic research and commercial manufacturing for advanced oxide devices in RF, quantum, and photonics applications. Neutral: This is a long-term R&D enabler with no immediate impact on component supply, pricing, or trader inventory decisions.
Silicon Photonics SubstratesOxide WafersLa Luce CristallinaSemiconductor TodayTechnical

Thu, Jan 22

04:03Impact score 10
Polar Light achieves nano-scale LED, paving way to next-gen micro-LED/nano-LED devices
Polar Light Technologies AB announced its first series of nano-scale LEDs at SPIE Photonics West 2026. The technology utilizes a patented pyramidal architecture developed without traditional etching. Neutral: This is a long-term R&D milestone with no immediate supply chain impact.
Nano-LEDsPolar Light Technologies ABSemiconductor TodayTechnical

Tue, Jan 20

23:03Impact score 10
LIGENTEC and X-FAB expand integrated photonics collaboration
LIGENTEC and X-FAB have expanded their collaboration to strengthen integrated photonics offerings, targeting communication, computing, quantum, and sensing markets. The partnership aims to streamline customer access to advanced silicon nitride (SiN) and silicon-on-insulator (SOI) platforms with heterogeneous integration. Neutral: This is a long-term R&D and manufacturing alignment with no immediate impact on component supply, pricing, or trader inventory decisions.
硅基光电子芯片氮化硅光电子平台LIGENTEC SA, X-FAB Silicon Foundries SESemiconductor TodayTechnical
17:06Impact score 15
Coherent launches bondable diamond solutions for thermal management
Coherent Corp has launched bondable diamond solutions for thermal management in semiconductor packaging. The technology aims to reduce thermal interface resistance for improved cooling in high-power electronic and opto-electronic devices. This is a long-term R&D development with no immediate impact on component supply, demand, or pricing.
Thermal Interface MaterialsDiamond SubstratesCoherent CorpSemiconductor TodayTechnical
00:37Impact score 10
QD Laser orders Riber MBE 6000 to scale quantum dot laser production for datacoms
Japanese quantum dot laser specialist QD Laser has ordered an MBE 6000 production system from French equipment maker Riber. This investment aims to scale production of its quantum dot lasers for datacom applications. Neutral: This is a long-term capacity addition for a niche component with no immediate impact on broader semiconductor supply or pricing.
Quantum Dot LasersOptoelectronic DevicesQD Laser Inc, Riber S.A.Semiconductor TodayTechnical

Thu, Jan 15

15:57Impact score 78
Samsung to close down one of its 8-inch foundry fabs within the year
Samsung will close its S7 8-inch foundry fab in H2, cutting its 8-inch wafer capacity by ~50k wpm (from 250k). This is part of an industry trend where TSMC is also reducing 8-inch capacity, tightening supply amid strong demand for AI server PMICs. Bullish: The supply reduction, coupled with DB Hitek operating at full capacity and competitors planning 5-20% price hikes, signals upward price pressure for 8-inch wafer output.
Power Management ICsDisplay Driver ICsCMOS Image SensorsSamsung Electronics, TSMC and 7 totalThe ElecCapacity Change

Wed, Jan 14

05:00Impact score 12
Wolfspeed produces single-crystal 300mm silicon carbide wafer
Wolfspeed announced the production of a single-crystal 300mm silicon carbide wafer, marking a technical milestone in its transition to larger wafer sizes. This development is part of the company's long-term strategy to increase manufacturing efficiency and scale for future volume commercialization. Neutral: This is a pre-commercial R&D achievement with no immediate impact on SiC wafer or device supply, pricing, or trader inventory decisions.
Silicon Carbide (SiC) WafersWolfspeed IncSemiconductor TodayTechnical

Wed, Jan 7

04:54Impact score 10
Cambridge GaN Devices appoints Fabio Necco as new CEO
Fabless GaN semiconductor firm Cambridge GaN Devices (CGD) has appointed Fabio Necco as its new CEO. The leadership change is intended to accelerate the company's market entry strategy. This is a neutral event for traders as it signals no immediate change in supply, demand, or pricing for GaN components.
GaN Power TransistorsGaN ICsCambridge GaN Devices LtdSemiconductor Today

Tue, Dec 23

22:44Impact score 10
MicroLink Devices UK awarded in Call 2 of CSconnected Supply Chain Development Programme
MicroLink Devices UK Ltd has been selected as an awardee in the second call of the CSconnected Supply Chain Development Programme in South Wales. This is a regional cluster development initiative focused on strengthening the compound semiconductor ecosystem. Neutral: This R&D-focused grant has no immediate, direct impact on trading dynamics for specific electronic components.
Compound SemiconductorsMicroLink Devices UK LtdSemiconductor TodayPartnership/M&A

Fri, Dec 19

17:16Impact score 15
onsemi to develop power devices using GlobalFoundries’ 200mm lateral GaN-on-Si
onsemi and GlobalFoundries have signed a collaboration to develop and manufacture gallium nitride (GaN) power products using GF's 200mm eMode GaN-on-silicon process, starting with 650V devices. This partnership aims to leverage GF's foundry capacity and onsemi's power expertise for critical markets. The announcement is a long-term R&D milestone with no immediate impact on current supply, pricing, or inventory of existing power components.
GaN Power Devicesonsemi, GlobalFoundriesSemiconductor TodayTechnical

Thu, Dec 18

17:34Impact score 15
CGD wins Hyundai Open Innovation challenge
Fabless firm Cambridge GaN Devices (CGD) has been selected as a winner in Hyundai's Open Innovation Challenge for its ICeGaN solution, which targets EV traction inverter power modules. The win highlights CGD's technology as a potential cost-effective alternative to Silicon Carbide (SiC) in high-power EV applications. Neutral: This is a design win validation for a specific fabless firm's technology roadmap but does not indicate an immediate shift in component supply, demand, or pricing for the broader market.
GaN Power TransistorsGaN ICsSiC Power ModulesCambridge GaN Devices Ltd (CGD)Semiconductor TodayTechnical

Mon, Dec 15

18:11Impact score 12
CEA-Leti and ST demo path to fully monolithic silicon RF front-ends with 3D sequential integration
CEA-Leti and STMicroelectronics presented a 3D sequential integration technology for RF front-ends at IEDM 2025. The research demonstrates a path to monolithically integrate SiGe HBTs, RF SOI switches, and high-quality passives on a single wafer. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or production capacity.
RF Front-End Modules (FEM)SiGe HBTRF SOI SwitchesSTMicroelectronicsSemiconductor TodayTechnical
17:58Impact score 10
Imec presents record WSe2-based 2D-pFETs for extending logic technology roadmap
Imec presented research at IEDM 2025 demonstrating p-type FETs with monolayer tungsten diselenide (WSe2) channels achieving a record drive current of 690µA/µm, alongside improved fab-compatible modules for contact and gate stack integration. This represents an R&D milestone in exploring 2D materials for extending the logic scaling roadmap beyond silicon. Neutral: This is a long-term research development with no immediate impact on component supply, pricing, or trading decisions.
Logic TransistorsAdvanced Process NodesimecSemiconductor TodayTechnical
17:46Impact score 8
NTT reports first RF operation of AlGaN transistors with Al-content over 0.75
NTT presented research at IEDM 2025 demonstrating the first RF operation of AlGaN-channel FETs with aluminum content exceeding 75%, enabling millimeter-wave signal amplification. This is a materials science breakthrough for high-frequency, high-power applications like 6G and satellite communications. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or trading dynamics.
RF TransistorsGaN/SiC SemiconductorsNTTSemiconductor TodayTechnical

Thu, Dec 11

17:37Impact score 20
SemiQ launches Gen3 1200V S3 modules for high-power industrial and EV applications
SemiQ Inc has expanded its third-generation QSiC MOSFET product line with 1200V S3 modules, claiming industry-leading current density and thermal resistance for industrial and EV applications. This is a standard product line refresh targeting high-power markets. Neutral: This launch represents incremental technology advancement but does not signal an immediate shift in supply, demand, or pricing for SiC components.
SiC MOSFETSiC Epitaxial WafersSemiQ IncSemiconductor TodayProduct Launch
05:07Impact score 15
VisIC closes $26m round B investment
VisIC Technologies, an Israeli fabless GaN power device supplier, closed a $26M Series B funding round led by an unnamed global semiconductor leader, with strategic investment from Hyundai Motor Company and Kia. This investment aims to accelerate the development and adoption of GaN technology in automotive power conversion applications. Watch: The funding signals growing strategic interest and validation for GaN in high-growth automotive markets, but has no immediate, direct impact on component supply or pricing.
GaN Power TransistorsVisIC Technologies LtdSemiconductor TodayPartnership/M&A

Wed, Dec 10

00:59Impact score 15
Wolfspeed powering Toyota’s EV platforms with silicon carbide components
Wolfspeed announced its silicon carbide MOSFETs will be used in onboard charger systems for Toyota's future electric vehicle platforms. This represents a significant design win for Wolfspeed in the competitive automotive SiC market. Neutral: This confirms long-term demand visibility for Wolfspeed's SiC components but does not indicate an immediate supply/demand imbalance or price action for traders.
SiC MOSFETsSiC Power SemiconductorsWolfspeed IncSemiconductor TodayPartnership/M&A

Fri, Dec 5

17:50Impact score 10
X-FAB’s XbloX accelerates time-to-market for scalable, high-performance SiC MOSFETs
X-FAB's XbloX platform offers standardized SiC process technologies, claiming to accelerate production starts by up to nine months compared to traditional methods. This is a technology development announcement from a specialty foundry aimed at power device designers. Neutral: This is a long-term process improvement that may increase design activity but has no immediate, direct impact on SiC component supply, pricing, or trader inventory decisions.
SiC MOSFETX-FABSemiconductor TodayTechnical

Wed, Dec 3

17:15Impact score 25
onsemi and Innoscience sign MoU to collaborate on speeding global rollout of GaN power portfolio
onsemi and Innoscience have signed a non-binding MoU to collaborate on accelerating the deployment of 40-200V GaN power devices. The partnership aims to broaden customer adoption by leveraging Innoscience's 200mm GaN-on-silicon wafer manufacturing. Watch: This could increase long-term demand for GaN components by improving supply chain efficiency and market access, but the non-binding nature and focus on future deployment limit immediate trading impact.
GaN Power Devicesonsemi, Innoscience (Suzhou) Technology Holding Co LtdSemiconductor TodayPartnership/M&A

Tue, Dec 2

03:29Impact score 58
Wolfspeed receives $698.6m in cash tax refunds
Wolfspeed has received $698.6 million in cash tax refunds from the IRS under the Advanced Manufacturing Investment Credit (AMIC), representing a significant portion of the approximately $1 billion in credits it has accrued. This substantial cash infusion is tied to its capital investments in silicon carbide (SiC) materials and device manufacturing capacity. Watch: The funds strengthen Wolfspeed's balance sheet for its ongoing capacity expansion, but do not directly signal an immediate change in SiC market supply or pricing.
SiC WafersSiC Power DevicesWolfspeed IncSemiconductor TodayFinancial/Earnings

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Wed, Jan 28

La Luce Cristallina launches CMOS-compatible oxide pseudo-substrate

Thu, Jan 22

Polar Light achieves nano-scale LED, paving way to next-gen micro-LED/nano-LED devices

Tue, Jan 20

LIGENTEC and X-FAB expand integrated photonics collaboration

Coherent launches bondable diamond solutions for thermal management

QD Laser orders Riber MBE 6000 to scale quantum dot laser production for datacoms

Thu, Jan 15

Samsung to close down one of its 8-inch foundry fabs within the year

Wed, Jan 14

Wolfspeed produces single-crystal 300mm silicon carbide wafer

Wed, Jan 7

Cambridge GaN Devices appoints Fabio Necco as new CEO

Tue, Dec 23

MicroLink Devices UK awarded in Call 2 of CSconnected Supply Chain Development Programme

Fri, Dec 19

onsemi to develop power devices using GlobalFoundries’ 200mm lateral GaN-on-Si

Thu, Dec 18

CGD wins Hyundai Open Innovation challenge

Mon, Dec 15

CEA-Leti and ST demo path to fully monolithic silicon RF front-ends with 3D sequential integration

Imec presents record WSe2-based 2D-pFETs for extending logic technology roadmap

NTT reports first RF operation of AlGaN transistors with Al-content over 0.75

Thu, Dec 11

SemiQ launches Gen3 1200V S3 modules for high-power industrial and EV applications

VisIC closes $26m round B investment

Wed, Dec 10

Wolfspeed powering Toyota’s EV platforms with silicon carbide components

Fri, Dec 5

X-FAB’s XbloX accelerates time-to-market for scalable, high-performance SiC MOSFETs

Wed, Dec 3

onsemi and Innoscience sign MoU to collaborate on speeding global rollout of GaN power portfolio

Tue, Dec 2

Wolfspeed receives $698.6m in cash tax refunds

Chip Teardown Lab

Component price indexNPI, vs. prior period

Trending components