NuAxi Stream - Real-Time Semiconductor Intelligence

Thu, Oct 29

03:10Impact score 0
Industrial MCUs pair 600-MHz cores with MRAM
Renesas has introduced the RX74M and RX74N 32-bit industrial MCUs, available now along with corresponding evaluation boards. The two devices are the first in the RX family to use a 22-nm process and incorporate embedded MRAM. Based on a 600-MHz RXv3e core, they achieve more than twice the performance of their 240-MHz predecessors, the RX72M and RX72N. Each MCU features 1 MB of code MRAM, 256 KB of zero-wait-state TCM (tightly coupled memory) RAM, and 1.5 MB of SRAM for real-time processing. Unlike embedded flash, MRAM can be written without a prior erase operation, allowing faster code and data updates and reducing programming time. The RX74M is designed for industrial automation equipment, including AC drives, industrial robots, and PLCs, while the RX74N targets smart meters, power conditioners, and HVAC systems. Both integrate Gigabit Ethernet and CAN FD, and the RX74M adds a TSN-capable Ethernet switch and an EtherCAT slave controller for industrial networking.
industrial MCUsembedded MRAMRenesas ElectronicsEDN
02:27Impact score 95
[News] Samsung Says HBM Share Matches DRAM Standing as HBM4 Sales Triple; DS Margin Hits 72%, 10 LTA Clients Signed
Samsung reported 3Q26 results: riding the AI memory boom, operating profit surged nearly ninefold YoY to a record KRW 107.4 trillion ($80.04 billion), and revenue climbed to KRW 195.3 trillion, exceeding its early-October preliminary estimate by KRW 300 billion. The semiconductor (DS) division delivered KRW 147.1 trillion in sales and KRW 106.5 trillion in operating profit, a 72.4% margin. Samsung has posted record revenue and operating profit for four consecutive quarters since 4Q25. During its October 29 earnings call, Samsung said HBM4 revenue more than tripled QoQ in 3Q26, accounting for roughly 60% of total HBM sales; its planned 2027 HBM supply is effectively sold out, with customer negotiations concluded at target pricing levels, though major clients continue to request additional volumes. Samsung also claims it has achieved its goal of bringing its HBM market share in line with its standing in the broader DRAM market (TrendForce ranked Samsung as the top DRAM supplier in 2Q26 with a 39.4% share). Against a tightening supply outlook, Samsung has finalized long-term memory supply agreements (LTAs) with 10 major customers and is negotiating with another 10, and reportedly sees its target of securing LTAs covering 60–70% of production capacity by 2030 increasingly within reach; Samsung expects chip supply to tighten further in 2027. On pricing, DRAM average selling prices (ASPs) climbed around 20% QoQ in 3Q26 and NAND gained a high-teens percentage QoQ, per News 1 citing Kim Jae-june, Executive Vice President of Samsung Electronics' Memory Business; shipment growth was more modest, with DRAM volumes up a low- to mid-single-digit percentage and NAND up a mid-single-digit percentage sequentially.
HBM4HBM DRAMSamsungTrendForcePrice Movement
00:43Impact score 60
SK Hynix Reports Record Q3 Results Driven by AI Memory Surge
SK Hynix reported record Q3 results, which the title attributes to an AI memory surge. The article body states that long-term customer contracts and rising chip prices point to a change in how memory manufacturers manage multi-year production capacity and capex. The source does not provide specific financial figures or price change magnitudes.
memorySK HynixEE TimesPrice Movement
00:23Impact score 60
CXMT to Start HBM3E Mass Production by the End of 2026
According to an exclusive Reuters report, CXMT is expected to start mass production of its first-ever HBM memory in the HBM3E form factor within the next two months, meaning it will officially start by the end of the year. CXMT began risk production of HBM3E memory in August, but the company has struggled with the yield of HBM3E memory modules, and this situation remains similar today, according to the latest report. The yield challenge stems from the immaturity of the through-silicon via (TSV) technology it employs: front-end manufacturing achieves around 30% yields, while back-end processing adds about 70% on top of the original 30%. Data suggests CXMT is attempting to achieve HBM3E with only 3,000 TSVs per layer and trying to pack 8 layers into the regular 8-high HBM3E configuration (compared with Samsung's roughly 5,000 TSVs per layer on HBM2 and SK hynix's more than 8,000 TSVs per layer on HBM3). Given these challenges, the company is unlikely to transition to a higher-capacity 12-high HBM in the near term as it addresses engineering issues. JEDEC's official data for HBM3E indicates a 1,024-bit width and speeds from 9.2 Gbps per pin to 12.4 Gbps, with most standard configurations targeting 9.6 Gbps per pin, total bandwidth around 1.2 TB/s, and capacities from 24 GB using 8-high stacks to 36 GB using 12-high stacks of 24 Gb layers. The mass production start is an expectation, not a confirmed completed event.
HBM3ECXMTTechPowerUpCapacity Change

Wed, Oct 28

23:30Impact score 60
[Insights] NVIDIA RTX 60 May Slip to 2028, AMD RDNA 5 Also in Question: Why Are Gaming GPU Cycles Slowing?
According to unconfirmed rumors, NVIDIA's RTX 60 series could be delayed until 2028, with similar speculation surrounding AMD's RDNA 5; if true, consumer GPU upgrade cycles could stretch to roughly three years. NVIDIA previously launched the RTX 30 series in 2020, the RTX 40 series in 2022, and the RTX 50 series in early 2025, maintaining a cycle of just over two years. The source states the cause: AI is a major factor — NVIDIA's August earnings report showed quarterly Data Center revenue of US$89 billion, approximately 92.5% of its US$96.2 billion total revenue; gaming is no longer its primary revenue driver, with R&D resources and memory supplies increasingly directed toward AI. Amid strong AI accelerator demand and rising memory prices, the RTX 50 SUPER series has reportedly been put on hold due to GDDR7 costs. Another factor is weakening upgrade incentive: TechSpot's testing found the RTX 5080 outperformed the RTX 4080 SUPER by an average of just 4% at 1440p and 11% at 4K in traditional gaming benchmarks without frame generation. Integrated graphics advances (Intel's Panther Lake Arc B390, AMD's Strix Halo Radeon 8060S, and the Blackwell GPU in RTX Spark) are also pressuring entry-level discrete GPUs. The source notes these performance results do not represent the entire RTX 50 lineup, and the delay reports remain conditional ('if true') speculation.
consumer gaming GPURTX 60 seriesRDNA 5NVIDIA, AMDTrendForce
23:18Impact score 0
SK Hynix says customers want more than twice the HBM it can supply
SK Hynix said customers are seeking more than twice the high-bandwidth memory (HBM) volume it can currently supply; the source does not state the cause, but the source notes that moves toward shorter memory stacks reflect supply shortages rather than weakening demand. This is a statement by SK Hynix about current HBM demand versus its supply capability and is treated as background information.
HBMSK HynixDigiTimes Asia
23:15Impact score 60
SK Hynix: What shall we do with all the cash?
SK Hynix reported Q3 2026 revenue up 328% Y/Y to ₩104 trillion ($78.9 billion), surpassing ₩100 trillion for the first time, with net income up 216% to ₩39.8 trillion (c$30 billion), an operating margin of 80 percent, and a net cash position of ₩98.7 trillion ($74 billion), effectively debt-free. The company abandoned the US IPO of its Solidigm subsidiary and discontinued its review, citing careful consideration of recent financial market conditions and other factors; the IPO had been intended to raise external capital for expanding Solidigm's production facilities. SK Hynix said HBM4 is becoming its mainstream product as of this quarter and should overtake HBM3E in volume and revenue next quarter; it has 14 LTAs (Long-Term buying/supply Agreements) covering more than half of its memory capacity for 2027 and 2028, and it sees memory demand exceeding supply through to 2030. Its spending decisions include returning most of its Kioxia share gain to shareholders, with ₩100 trillion ($75.4 billion) going to shareholders this year; ramping the M15X fab's output to maximum capacity by the end of the year to increase HBM4 production; raising the proportion of its 321-layer NAND process to more than half of its domestic production capacity in the fourth quarter to increase high-performance, high-capacity eSSD supply; and rising production output in 2027 as the Yongin Phase 1 plant enters full-scale operation. Paying for a US fab for Solidigm remains unsolved, with the company still able to use about another $30 billion, per the source.
HBM4HBM3E DRAMSK HynixBlocks & FilesCapacity Change
22:00Impact score 45
Enphase, Infineon Develop 900 V GaN Bidirectional Switches
Enphase Energy and Infineon Technologies have announced the deployment of 900 V gallium nitride (GaN) monolithic bidirectional switch (BDS) devices in Enphase solid-state transformer (SST) power modules, targeting AI data center power infrastructure. Enphase led the system-level development, while Infineon contributes device technology and engineering expertise through its CoolGaN portfolio; Enphase previously introduced 650 V GaN bidirectional switches into volume-production power electronics, and GaN HEMT technology is already used in its IQ9 microinverters. The technology supports Enphase's IQ Solid-State Transformer (IQ SST) platform for AI data centers and can support an 800 V unipolar DC bus instead of split ±400 V rails, and may also enable future 1,500 VDC architectures using split ±750 V generation; the 900 V devices could also benefit commercial solar inverters, supporting three-phase line-to-line designs for 480 V applications in the United States and 400 V applications in other markets. No specific quantities, prices, or timelines are stated. The devices have completed initial testing and are being integrated into IQ SST development builds, with production qualification expected to follow, so further validation is needed before the technology reaches qualified production status.
900 V GaN monolithic bidirectional switch (BDS)solid-state transformer (SST) power modulesCoolGaNEnphase Energy, Infineon TechnologiesPower Electronics NewsPartnership/M&A
21:00Impact score 10
When Nanomagnets Do the Math: France’s New Machine for Impossible Choices
French researchers have demonstrated a hybrid nanoelectronic experimental "Ising machine" designed to solve difficult combinatorial optimization problems more efficiently. The work was conducted by researchers from CEA-Leti and Spintec in Grenoble and the Centre for Nanoscience and Nanotechnology at Université Paris-Saclay, and reported in Nature Communications. The system combines hafnium-oxide resistive random-access memory (ReRAM) with stochastic magnetic tunnel junctions (SMTJs): ReRAM devices store the weighted connections describing how variables influence one another and can perform analog matrix operations where data are stored, while SMTJs represent the binary variables and fluctuate between states driven by thermal noise. The researchers control annealing by adjusting a single read voltage applied to the ReRAM array, so the hardware produces an annealing schedule through the direct interaction of its components. The proof-of-concept machine consistently reached the global optimum in a 24-vertex weighted MAX-CUT benchmark and a 10-vertex, three-color graph-coloring problem, operated at room temperature without an applied magnetic field, and the researchers emphasize that ReRAM, magnetic tunnel junctions and CMOS circuitry are compatible with back-end-of-line fabrication and vertical three-dimensional integration. The article notes this remains a small experimental prototype, not evidence of superiority over leading conventional solvers; updates are currently sequential, external feedback is still used for measurement, and comparative speed and energy benefits have not yet been quantified. The source does not state a cause (this is a technology development report, not a market movement).
hafnium-oxide ReRAMstochastic magnetic tunnel junctions (SMTJs)SemiWiki
21:00Impact score 60
PC production may be heading back to China as AI-driven memory and storage costs rise. #HP, #ASUS, and #Acer are reportedly moving some manufacturing ...
According to a TrendForce post published October 28, 2026, PC production may be heading back to China as AI-driven memory and storage costs rise. HP, ASUS, and Acer are reportedly moving some manufacturing from Thailand and Vietnam, while Dell may follow. The claim is reported ('reportedly') in nature, describing a planned/reported capacity relocation rather than a confirmed completed event.
PCHP, ASUS and 4 totalTrendForce Official (Market Data)Capacity Change
20:59Impact score 97
NVIDIA GeForce RTX 5080 Reaches Nearly $2,000 Across U.S. Retailers
NVIDIA's GeForce RTX 5080 has seen a significant increase in its listed price over the past few weeks, now costing nearly $2,000 at U.S. retailers. Cause: price hikes throughout the supply chain and the GPU's 16 GB of GDDR7 memory, which is currently in short supply, making the memory modules much more expensive. The card launched in early 2025 with an MSRP of $999; add-in card partners' custom solutions (new PCBs, enhanced cooling, and other features) gradually increased the price, and the issue escalated when memory supply became constrained. Across U.S.-based retailers like Best Buy, Micro Center, Amazon, Newegg, and B&H, the listing price now starts at nearly $2,000; on B&H, older listings show better pricing but are marked 'Temporary out of stock,' with only in-stock listings priced at $2,000 or more. In two months, listings have jumped from $1,200 to $2,000.
GeForce RTX 5080 GPUGDDR7 memoryNVIDIATechPowerUpPrice Movement
20:45Impact score 40
Intel gets tax breaks while local authorities lose revenue, claims policy org
On 28 October 2026, the non-profit Good Jobs First published the report 'The Bleeding Edge: How the Public Pays the Costs of Intel's Semiconductor Manufacturing', claiming that Intel continues to receive tax breaks from Oregon and New Mexico that have cost those communities more than $1.2 billion in lost revenue since 2015, with the shortfall largely falling on schools funded by local governments. For Oregon, the report says property tax abatements under the Strategic Investment Program (SIP) exempted Intel from at least $1.14 billion, while Hillsboro schools lost $891 million in revenue from 2017 through 2025; over the same timeframe Intel paid Oregon $552.4 million in fees, less than a third of the value of its tax breaks. In New Mexico, the report puts property tax exemptions under Industrial Revenue Bonds (IRBs) at $99.6 million in foregone revenue since 2017, with Rio Rancho Public Schools losing an estimated $43.4 million over the same nine-year period, while Intel paid $41.6 million in required payments in lieu of taxes from 2017 through 2025, shared among affected local governments. Good Jobs First also notes Intel was awarded billions under the CHIPS Act: an initial $7.86 billion secured under the Biden administration, of which $2.2 billion is believed to have been paid out; the incoming Trump administration rethought the scheme and made an $8.9 billion deal for 10 percent of Intel's common stock, composed of the remaining $5.7 billion of CHIPS Act cash plus $3.2 billion under the Secure Enclave program for military semiconductors. The organization estimates Intel laid off more than 4,700 workers at its Oregon and New Mexico facilities over the past three years. The report questions whether continued tax breaks are necessary for these decades-old established sites and recommends other communities question whether state and local tax breaks are needed. Intel responded that it works closely with governments in the regions where it operates to leverage incentives supporting leading-edge semiconductor R&D and manufacturing, without providing additional details.
property tax breaksproperty tax abatements (Strategic Investment Program)Industrial Revenue Bonds (IRBs) property tax exemptionsIntelThe RegisterPolicy/Regulation
19:31Impact score 96
SK Hynix Expects Memory Demand to Outpace Supply Through 2030
SK hynix reported its Q3 2026 quarterly results with a record $78.129 billion in net revenue and shared a market outlook: it expects memory demand to continue outpacing supply through 2030, with a grim outlook for the consumer market. The source states the main supply constraint is the complexity of leading-edge semiconductor nodes and the lengthy lead times for fab construction, which take years to translate into regular mass production volumes. On pricing, the average selling price of memory modules in Q3 increased by over 20% compared to Q2; SK hynix suggests this means consumer electronics device prices might jump by more than 20% once memory inventory is depleted. The company expects a decrease in PC and smartphone shipments, offset by a strong rollout of AI data centers. About 14 major customers, including most hyperscalers, have signed 5-year long-term agreements that will account for over 50% of total capacity sold for 2027 and 2028. The company also cited its long-term supply agreements and expansion plans involving new fab capacity and facilities under construction. The supply-demand gap and the possible consumer electronics price increase are company expectations, not achieved results.
memorySK hynixTechPowerUpPrice Movement
19:00Impact score 45
Ceva’s Next-Generation NeuPro Brings a Unified AI Platform from Sensors to Infrastructure
Ceva announced a next-generation NeuPro NPU portfolio introducing four NPU families sharing a common architecture and unified software stack: NeuPro Nano targets always-on sensing and entry-level perception, NeuPro Prime supports mainstream CNN and transformer workloads, NeuPro Max extends into advanced edge applications including high-resolution perception, multimodal models, robotics and on-device assistants, and NeuPro Ultra targets AI infrastructure, supporting complex language model inference and integration into intelligent memory, connectivity and data-processing silicon. Ceva reports up to twice the AI throughput per square millimeter and a 50% improvement in energy efficiency compared with the first generation. The architecture supports FP4, FP8 and mixed precision, higher memory bandwidth, dynamic shapes, paged key-value caching, and Mixture-of-Experts and linear attention. A single SDK spans all four families, and designers can combine multiple NeuPro engines within one SoC. Ceva says lessons from more than 15 first-generation NeuPro licensees helped shape the new portfolio. Selected customers are already receiving early access, with general availability planned for the second quarter of 2027.
next-generation NeuPro NPU portfolioNeuPro NanoNeuPro PrimeCevaSemiWiki
17:37Impact score 20
With 4F² promising a 33% smaller DRAM cell footprint, not every memory giant is convinced it’s the way forward. So where do they stand on 4F² devel...
Per a TrendForce post at 9:37 AM on Oct 28, 2026, 4F² promises a 33% smaller DRAM cell footprint, but not every memory giant is convinced it is the way forward. Micron says no to 4F², while SK hynix is keeping the door open: at today's earnings call, the Korean memory giant signaled plans to push its proven 6F² architecture further while continuing to explore 4F² and 3D DRAM for the future.
4F² DRAM cell architecture6F² DRAM architecture3D DRAMMicron, SK hynixTrendForce Official (Market Data)
17:00Impact score 0
Part 1. The Evolution of AI and AI Chips – and the HBM That Powers Them
Samsung published Part 1 of a series on the evolution of AI and AI chips and the HBM that powers them; the content is technical background. It explains the division of roles among AI chips (GPUs, AI-specific ASICs, CPUs), notes that during decode at smaller batch sizes memory bandwidth can become a key performance constraint, and describes KV cache data storage needs that grow as context lengths and concurrent requests increase. The article recounts that GPUs traditionally used GDDR for high memory bandwidth, but because GDDR devices are placed around the GPU on the board, adding memory requires additional space and routing, and raising per-pin data rates increases challenges of power consumption, heat, and signal integrity. HBM addresses this by combining vertical stacking with a wide I/O interface, connecting multiple stacked DRAM dies through Through Silicon Vias (TSVs), delivering high bandwidth, higher capacity, greater energy efficiency, and high-density packaging in a smaller footprint. It also outlines HBM's generational evolution, including stack counts rising from 8-high to 12-high and 16-high, higher-density DRAM dies, and advanced logic-process base dies. Samsung's zHBM is currently under development and directly stacks memory on top of the compute device via 3D integration to shorten data paths. The content is informational only, with Samsung providing no warranty as to its accuracy or completeness.
HBMGDDRDRAMSamsungSamsung Semiconductor Newsroom
14:16Impact score 45
Lam and Imec pursue 3-D integration
Lam and imec announced a collaboration to accelerate manufacturing readiness for 3D integration technologies supporting advanced packaging and next-generation memory. The collaboration focuses on key process challenges that must be solved before heterogeneous integration can scale broadly, with joint research areas including thick dielectric deposition, asymmetric stress compensation, bevel deposition, and plasma dicing, alongside process validation for advanced packaging and future memory architectures; the work also extends into future 3D memory technologies such as new charge-trap materials, precision multilayer deposition, high-aspect-ratio channel etch, deep memory contacts, and low-resistivity interconnects. The source states these innovations are increasingly important as AI workloads drive demand for greater memory density and bandwidth. The parties are also collaborating on R&D to advance Lam's Aether dry resist platform using imec's high-NA EUV research environment, targeting enhanced resolution, sensitivity, depth of focus and stochastic defectivity, and exploring Aether-enabled patterning for advanced interconnects, including ruthenium direct metal etch at increasingly aggressive pitches. Joint research has already demonstrated single-exposure high-NA EUV patterning for sub-20 nm ruthenium direct metal etch interconnects; across the wafer at 20nm pitch, that work obtained 100% electrical yield for fork structures sensitive to bridges and >90% for meander structures sensitive to breaks. The collaboration remains at the R&D and manufacturing-readiness stage; the source gives no volume-production timeline or commercial terms.
3D integration technologiesadvanced packagingnext-generation memoryLam, imecElectronics WeeklyPartnership/M&A
13:23Impact score 95
SK hynix’s 3Q26 Revenue Surpasses ₩100T as Operating Margin Hits Record 80% SK hynix reported revenue of ₩104.6155T in 3Q26, up 32% QoQ and 328% Yo...
SK hynix reported 3Q26 revenue of ₩104.6155T, up 32% QoQ and 328% YoY, marking the first time quarterly revenue exceeded ₩100T; operating profit reached ₩83.3338T, up 632% YoY, while operating margin climbed to a record 80%. The company attributed the strong performance primarily to high-value products including HBM, server DDR5, and enterprise SSDs (eSSDs). DRAM ASPs rose nearly 30% QoQ with bit shipments increasing by approximately 10%, while NAND Flash prices climbed by more than 20%. SK hynix noted AI infrastructure demand is expanding beyond a handful of major CSPs to mainstream enterprises and national-level initiatives, but advanced process complexity and lengthy fab construction timelines will constrain supply growth, and the company expects structural memory shortages to persist through 2030. DRAM: SK hynix began volume shipments of HBM4 in 3Q26 and expects the product to surpass HBM3E in both shipment volume and revenue in 4Q26, officially becoming its main HBM product; it also plans to bring its M15X fab to full capacity by year-end, and negotiations for HBM supply in 2027 have been completed. NAND Flash: sales of 321-layer TLC enterprise SSDs continue to expand, and the company plans to increase the share of 321-layer production to more than 50% of its domestic Korean capacity in 4Q26. SK hynix has signed long-term supply agreements with 14 key customers including major CSPs, with a standard contract term of five years and some customers negotiating extensions; these agreements have secured commitments covering more than 50% of the company's total capacity in both 2027 and 2028. The company also indicated that 2027 capital expenditure will increase substantially from 2026. TrendForce expects the DRAM market to potentially reach supply-demand balance in 2028 as additional supply gradually comes online.
DRAMHBM4HBM3ESK hynixTrendForce Official (Market Data)Price Movement
12:22Impact score 55
SK Hynix bets on EUV to extend 6F² DRAM as CXMT pushes 4F²
SK Hynix plans to extend the life of its existing 6F2 DRAM cell architecture through extreme ultraviolet (EUV) lithography and process improvements, keeping 4F2 and three-dimensional (3D) DRAM on its technology roadmap, while China's ChangXin Memory Technologies (CXMT) prepares to unveil a product based on a smaller cell design. These remain plan/preparation stages; the source does not state the cause.
6F2 DRAM4F2 DRAM3D DRAMSK Hynix, ChangXin Memory Technologies (CXMT)DigiTimes Asia
12:21Impact score 58
SK Hynix says memory shortages to persist until 2030
Alongside its quarterly results, SK Hynix said it expects memory shortages to persist until at least the year 2030, attributing this to AI-driven demand growth outpacing supply, the technical difficulty of leading-edge processes, and the long lead time required to build new production facilities. The company has 14 long-term deals with 14 big buyers, who will collectively buy more than half of its output during 2027 and 2028, and some of them want to extend the agreements; the deals include a mechanism that reflects market conditions within a price range agreed upon with customers. These deals helped SK Hynix record quarterly revenue of ₩104.6 trillion ($78.1 billion), up 328 percent year-over-year and 32 percent quarter-over-quarter, with operating profit of ₩87.68 trillion ($62.8 billion), up 486 percent year over year. The company outlined plans to expand production, including increasing HBM4 output, which it believes will surpass HBM3E in both shipment volume and revenue in the fourth quarter and become a mainstream product; rapidly increasing the portion of its 10nm-class 6th generation (1c) process technology and expanding sales of DDR5 and LPDDR5 SOCAMM for AI servers; and developing NAND based on HBF. Chief financial officer Kim Woo-hyun predicted that shipment volumes for PCs and mobile devices are expected to decrease due to cost burdens from rising memory prices and supply shortages. The company's share price rose about three percent in after-hours trading.
memoryHBM4HBM3ESK HynixThe Register

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Thu, Oct 29

Industrial MCUs pair 600-MHz cores with MRAM

[News] Samsung Says HBM Share Matches DRAM Standing as HBM4 Sales Triple; DS Margin Hits 72%, 10 LTA Clients Signed

SK Hynix Reports Record Q3 Results Driven by AI Memory Surge

CXMT to Start HBM3E Mass Production by the End of 2026

Wed, Oct 28

[Insights] NVIDIA RTX 60 May Slip to 2028, AMD RDNA 5 Also in Question: Why Are Gaming GPU Cycles Slowing?

SK Hynix says customers want more than twice the HBM it can supply

SK Hynix: What shall we do with all the cash?

Enphase, Infineon Develop 900 V GaN Bidirectional Switches

When Nanomagnets Do the Math: France’s New Machine for Impossible Choices

PC production may be heading back to China as AI-driven memory and storage costs rise. #HP, #ASUS, and #Acer are reportedly moving some manufacturing ...

NVIDIA GeForce RTX 5080 Reaches Nearly $2,000 Across U.S. Retailers

Intel gets tax breaks while local authorities lose revenue, claims policy org

SK Hynix Expects Memory Demand to Outpace Supply Through 2030

Ceva’s Next-Generation NeuPro Brings a Unified AI Platform from Sensors to Infrastructure

With 4F² promising a 33% smaller DRAM cell footprint, not every memory giant is convinced it’s the way forward. So where do they stand on 4F² devel...

Part 1. The Evolution of AI and AI Chips – and the HBM That Powers Them

Lam and Imec pursue 3-D integration

SK hynix’s 3Q26 Revenue Surpasses ₩100T as Operating Margin Hits Record 80% SK hynix reported revenue of ₩104.6155T in 3Q26, up 32% QoQ and 328% Yo...

SK Hynix bets on EUV to extend 6F² DRAM as CXMT pushes 4F²

SK Hynix says memory shortages to persist until 2030

Chip Teardown Lab2 opened

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