Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold
Novel Crystal Technology Inc. has developed a vertical gallium oxide MOSFET with a record power figure of merit (PFOM) of 1.23GW/cm2, a 3.2x improvement over the previous benchmark. This represents a significant R&D milestone in the development of next-generation, ultra-efficient power semiconductors. Neutral: This is a long-term R&D achievement with no immediate impact on trading dynamics for commercial components.
- Related manufacturers
- Novel Crystal Technology Inc
- Impact score
- 10 / 100, low impact