NuAxiSemiconductor trade intelligence
Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold
What happened
Novel Crystal Technology Inc. has developed a vertical gallium oxide MOSFET with a record power figure of merit (PFOM) of 1.23GW/cm2, a 3.2x improvement over the previous benchmark. This represents a significant R&D milestone in the development of next-generation, ultra-efficient power semiconductors. Neutral: This is a long-term R&D achievement with no immediate impact on trading dynamics for commercial components.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
Gallium Oxide (β-Ga2O3) MOSFETWide Bandgap Semiconductors
Novel Crystal Technology Inc
R&Dtechnology-breakthroughpower-devices
Source and time
Source: Semiconductor Today · 4/28/2025 · View original source
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