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ChangXin Memory

NuAxi groups public briefings that mention ChangXin Memory: product launches, capacity and pricing signals, and supply-chain changes. The page updates continuously.

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Latest briefings

Thu, Oct 29

00:23Impact score 60
CXMT to Start HBM3E Mass Production by the End of 2026
According to an exclusive Reuters report, CXMT is expected to start mass production of its first-ever HBM memory in the HBM3E form factor within the next two months, meaning it will officially start by the end of the year. CXMT began risk production of HBM3E memory in August, but the company has struggled with the yield of HBM3E memory modules, and this situation remains similar today, according to the latest report. The yield challenge stems from the immaturity of the through-silicon via (TSV) technology it employs: front-end manufacturing achieves around 30% yields, while back-end processing adds about 70% on top of the original 30%. Data suggests CXMT is attempting to achieve HBM3E with only 3,000 TSVs per layer and trying to pack 8 layers into the regular 8-high HBM3E configuration (compared with Samsung's roughly 5,000 TSVs per layer on HBM2 and SK hynix's more than 8,000 TSVs per layer on HBM3). Given these challenges, the company is unlikely to transition to a higher-capacity 12-high HBM in the near term as it addresses engineering issues. JEDEC's official data for HBM3E indicates a 1,024-bit width and speeds from 9.2 Gbps per pin to 12.4 Gbps, with most standard configurations targeting 9.6 Gbps per pin, total bandwidth around 1.2 TB/s, and capacities from 24 GB using 8-high stacks to 36 GB using 12-high stacks of 24 Gb layers. The mass production start is an expectation, not a confirmed completed event.
HBM3ECXMTTechPowerUpCapacity Change

Wed, Oct 28

16:40Impact score 60
RT NEWS: China’s #CXMT isn’t letting low yields slow its #HBM3E push! Despite yields of just 20–30% vs. SK hynix’s 70%, it reportedly eyes limited...
According to RT NEWS, CXMT, despite HBM3E yields of just 20-30% compared with SK hynix's 70%, reportedly plans limited production within 2 months, with samples already sent to domestic AI chipmakers. The source does not state the cause. This production plan is a reported plan and has not been confirmed as realized mass production.
HBM3ECXMTTrendForce Official (Market Data)Capacity Change
08:37Impact score 55
CXMT reportedly prioritizes China demand, rejecting Apple's DRAM inquiry
CXMT has reportedly declined Apple's inquiry about purchasing DRAM, prioritizing supply to domestic (Chinese) customers instead. The source also notes that as global memory supplies tighten and prices rise, the Chinese memory maker's capacity allocation and companies' efforts to secure supply have drawn attention. This is a reported (unconfirmed) event.
DRAMCXMT, AppleDigiTimes Asia
08:32Impact score 60
[News] CXMT Reportedly Ships HBM3E Samples, Eyes Production Within 2 Months Despite 20–30% Yields
According to a 2026-10-28 report citing Reuters sources, CXMT's HBM3E yields currently stand at just 20% to 30%, well below the approximately 70% achieved by SK hynix. CXMT has reportedly delivered HBM3E samples to several domestic AI chip designers and expects to begin limited production within the next two months (planned, not yet implemented). It has provided customers with two versions: a standard design and a revised version incorporating changes aimed at improving manufacturing yields. Because a significant portion of chips must be discarded or reworked, low yields are expected to make CXMT's HBM3E more expensive to produce than comparable products from overseas competitors. CXMT reportedly began developing HBM technology internally as early as 2024. Testing cited by Reuters showed CXMT's HBM3E performed closer to SK hynix's previous-generation HBM3 than to its HBM3E, highlighting the technological gap with SK hynix, Samsung Electronics, and Micron. The report also notes China's shortage of advanced AI memory: Reuters noted in September that Huawei, Cambricon, MetaX, and Iluvatar CoreX had reportedly raised prices for current and next-generation AI chips by 20% to 50%, and Chinese chipmakers have increasingly relied on costly grey-market HBM supplies following tighter U.S. export restrictions. Per Seoul Economic Daily in September, citing The Information, Alibaba's chip design unit T-Head and Cambricon Technology were reportedly testing the memory; if development proceeds as planned, products incorporating CXMT's HBM3E could reach the market as early as 2027. Per Southern Metropolis Daily, CXMT management did not directly address the technology at a September investor briefing, saying only it would continue developing products and processes according to its existing roadmap; an analyst noted it remained unclear whether samples could meet domestic customers' requirements or how soon stable, large-scale production could be achieved.
HBM3EHBM3HBMCXMT, SK hynix and 8 totalTrendForce
06:39Impact score 55
[News] SK hynix Eyes EUV-Driven 6F² Scaling, Keeps 4F² and 3D DRAM in Play as Micron Holds Back
During its 3Q26 earnings call, SK hynix said it plans to maximize the potential of its existing 6F² architecture through process improvements and stable platform operations, while continuing to develop 4F² and 3D DRAM as potential next-generation options, with adoption tied to each technology's maturity and economic viability. According to News 1, SK hynix DRAM marketing head Park Joon-deok said advances in EUV lithography and process scaling offer further room to extend the 6F² platform, stressing that commercializing new cell architectures requires overcoming hurdles in yields, reliability, costs, product design and customer validation. By contrast, Micron has ruled out adopting 4F² DRAM currently, saying the technology is "not on the roadmap right now"; Micron President and Chief Technology and Product Officer Scott DeBoer said more than 20 years of research had failed to identify a sustainable scaling path, and that while technically feasible, the 4F² structure's process complexity and higher manufacturing costs limit its practical benefits. According to Chosun Biz, Samsung Electronics is developing a 4F² architecture based on vertical channel transistors (VCT), and Song Jae-hyuk, President and CTO of Samsung's Device Solutions (DS) division, confirmed the company's 4F² development efforts at SEDEX 2026 in Seoul on October 14. Separately, China's CXMT is pushing ahead with 4F² commercialization plans, aiming to launch its first 4F²-based server DDR5 RDIMM module by the end of 2026. SK hynix is also pursuing 4F² research: in a July blog post tied to VLSI 2026, it positioned 4F² vertical-gate (VG) DRAM as a way to extend scaling at sub-10nm nodes.
DRAM6F² DRAM4F² DRAMSK hynix, Micron and 4 totalTrendForce

Sat, Oct 24

18:20Impact score 55
RT NEWS: #Micron has studied 4F² #DRAM for 20+ years and still skips it, saying the density edge is near-mythical and capacitor pitch sets bit densit...
According to a repost from TrendForce, Micron has studied 4F² DRAM for 20+ years and still skips it, saying the density edge is near-mythical and capacitor pitch sets bit density. In contrast, CXMT (Oct. 10) and Samsung (CTO, Oct. 14) are pursuing 4F² DRAM, while Micron plans to ramp 1δ in 2H27. The ramp remains a plan as stated, not a completed result.
4F² DRAM1δ DRAMMicron, CXMT and 3 totalTrendForce Official (Market Data)

Fri, Oct 23

21:30Impact score 10
China can make advanced chips without EUV, but the bill keeps growing
An analysis article published 23 October 2026 reports that export controls keep ASML's most advanced EUV lithography machines out of China, so the country's chip industry relies on DUV lithography with multiple patterning to make advanced chips, at the cost of bigger dies, more defects, lower yields, longer manufacturing times and higher bills. Chris Mack, co-founder and CTO of Fractilia, said industry conventional wisdom held that three exposures on a 193 immersion tool cost about the same as one exposure on an EUV tool, and that at four masks EUV became more cost-effective. Teardowns of Huawei's Mate 60 Pro in 2023 found its Kirin 9000S processor made by SMIC using a second-generation 7nm-class process without EUV; analysis of Huawei's Kirin 9030 found SMIC had pushed its DUV-based process closer to 5nm-class density, though it continued to lag TSMC and Samsung leading processes. A June Morgan Stanley report estimated Chinese DRAM maker CXMT was producing only around one-third as many bits per wafer as Western competitors, with the older process node accounting for only about a third of that shortfall, and said access to lithography is a 'hard ceiling' on Chinese memory development. Micron's 1-alpha generation was developed without EUV, showing how far DUV can be stretched; Micron's newer 1-gamma DRAM process uses EUV, which Micron said achieves more than 30% greater bit density per wafer than its preceding 1-beta generation. Morgan Stanley assumes CXMT remains stuck on its 1-alpha process without EUV, yet raises its share of global DRAM bit supply from 14% in 2026 to 16% in 2028 by building more greenfield capacity, and expects China's AI chip self-sufficiency to rise from 42% in 2025 to 70% by 2030. Mack said he would be hard pressed to believe a three-nanometer or two-nanometer node is economically viable without EUV.
DUV lithographyEUV lithographyDRAMASML, SMIC and 7 totalTom's Hardware
03:57Impact score 60
Micron Walks Away From 4F² DRAM After Two Decades of Research, Bets on 3D DRAM Instead
Micron has decided not to bring 4F² DRAM to market, even though it says it invented the cell design and has been researching it for around two decades. Scott DeBoer, Micron's President and Chief Technology and Products Officer, shared the decision during the company's technology webinar on October 21. On paper, 4F² uses vertical channel transistors to shrink each memory cell's footprint by about a third compared with the 6F² layout used in today's DRAM; however, DeBoer argued that real-world density is limited by how closely the capacitors can be packed, not by the cell's footprint, calling the density advantage over 6F² "a bit of a myth." He also said 4F² can be built, but at a higher cost and complexity, and that it runs into fundamental scaling problems at leading-edge nodes, which points toward 3D DRAM. This puts Micron at odds with its rivals: Samsung and SK hynix are both developing 4F² designs, and China's CXMT says its first 4F² product will be a server DDR5 RDIMM due by the end of this year. Micron will keep scaling 6F² instead, with its 1-delta node set to ramp in Boise, Idaho, in the second half of 2027 and the 1-epsilon node after it moving to wafer bonding. 3D DRAM is being developed as a parallel path, but there's no timeline yet, and Micron says it will only switch once the economics make sense. It is a risky bet if rivals manage to make 4F² cheap at scale, especially with memory supply expected to get even tighter in 2027 and 2028, per Micron's own estimates.
4F² DRAM6F² DRAM3D DRAMMicron, Samsung and 4 totalTechPowerUpEOL/Discontinuation

Thu, Oct 22

15:40Impact score 55
🔥 #Micron has unleashed a wave of memory roadmap updates, spanning DRAM, HBM and NAND. The standout? Its Vertical 3D HBM (vHBM), now with a 2028 ma...
Micron has released a wave of memory roadmap updates spanning DRAM, HBM and NAND. The standout is its Vertical 3D HBM (vHBM), which now carries a 2028 mass-production target — a stated target, not achieved mass production. The same post notes that while China's CXMT pushes ahead with 4F² DRAM, Micron is taking the opposite path, sticking with 6F² and arguing that cell architecture alone doesn't determine bit density. The information was posted in a tweet at 7:40 AM on October 22, 2026.
DRAM HBMNANDMicron, CXMTTrendForce Official (Market Data)
09:49Impact score 55
Micron skips 4F² for 3D DRAM as CXMT pushes ahead
Micron does not plan to commercialize 4F² DRAM, stating that the architecture offers limited benefits while adding cost and complexity; meanwhile, Chinese rival ChangXin Memory Technologies (CXMT) is advancing the technology. This is a planned statement from Micron and does not involve any realized price or production changes.
4F² DRAM3D DRAMMicron, CXMTDigiTimes Asia

Wed, Oct 21

12:41Impact score 58
CXMT's next DRAM milestone: 4F² server memory with hybrid bonding by end-2026
Chinese DRAM maker CXMT's next DRAM milestone is a plan to achieve 4F² server memory using hybrid bonding by end-2026. At a recent shareholder meeting, management pledged to enter what it called the 'uncharted territory' of extreme memory scaling, and stated it would use process innovation to overcome technical barriers. The milestone remains a stated plan; the source does not state any progress beyond the roadmap, the cause, or market impact.
DRAM4F² server memoryCXMTDigiTimes AsiaCapacity Change
08:01Impact score 0
Top Ten Chinese Semiconductor Companies
The article lists ten leading Chinese semiconductor companies: SMIC is China's largest foundry with roughly $9.3 billion revenue in 2025; CXMT is the leading domestic DRAM maker with revenue surging past $8 billion; Huawei HiSilicon is the top chip design house (Kirin, Ascend AI, etc.); JCET Group is China's largest OSAT/packaging & testing firm; NAURA Technology Group is a leading semiconductor equipment maker; Hua Hong Semiconductor/Huahong Group is a major pure-play foundry focused on specialty/mature nodes; YMTC is the main domestic 3D NAND flash producer; Will Semiconductor (OmniVision) is a major image sensor and analog/design player; Tongfu Microelectronics is a second-tier but large packaging & testing company; and Cambricon Technologies or Hygon Information are leading AI accelerator or x86-compatible server CPU players respectively. The source does not state the cause, and no price movement, capacity change, or policy event is reported.
SMIC, CXMT and 11 totalElectronics Weekly

Tue, Oct 20

06:31Impact score 95
[News] DRAM Prices Seen Rising 20% QoQ in 4Q26 Despite Slower Gains; AI Demand, Tight Supply Support Outlook
According to Commercial Times, institutional investors remain optimistic about the memory industry's long-term outlook, supported by expanding AI inference demand and limited new supply of mature memory products, despite slowing gains; fourth-quarter DRAM contract prices in 2026 are expected to rise about 20% quarter-on-quarter. The projected increase marks a slowdown from approximately 80% in the second quarter and 40% in the third, which the report attributes to a higher comparison base, weakening end-market purchasing power, and price ceilings under long-term agreements (LTAs) gradually taking effect. CXMT has announced progress in its next-generation 4F² DRAM architecture, which institutional investors note could theoretically reduce memory cell area by about 33% compared with the mainstream 6F² design, though mass production still faces challenges involving yields, leakage current, and data retention; it remains unclear whether the 4F² design applies to the entire DRAM cell or only specific areas, with full commercialization generally expected after 2028, and MoneyToday notes CXMT's announcement has yet to significantly affect DRAM spot prices, which continue to rise. Per Chosun Biz, companies including Apple and Tesla have raised the possibility of turning to Chinese suppliers such as CXMT and YMTC as memory costs climb, though analysts see limited near-term price pressure given constraints on Chinese suppliers' pricing competitiveness, available volumes, and sales markets. According to Commercial Times, if NVIDIA switches Rubin Ultra from 12-Hi to 8-Hi HBM while keeping the number of stacks per GPU and capacity per DRAM layer unchanged, HBM capacity per GPU would fall by about 33%, while the same DRAM die supply could theoretically support 50% more GPUs; TrendForce notes 8-Hi HBM is expected to cost 10–20% more per Gb than 12-Hi in 2027. Institutional investors note that larger AI models, longer context windows, and growing KV cache requirements are driving demand for greater memory capacity and bandwidth, particularly server DRAM and enterprise SSDs.
DRAM HBMserver DRAMCXMT, NVIDIATrendForcePrice Movement
02:53Impact score 55
[News] CXMT’s Earnings Boom Faces Test as 3Q Profit Growth Slows to 1–4% QoQ: What’s Behind the Slowdown?
Ahead of its October 31 earnings release, CXMT forecast revenue of RMB 265–270 billion for the first nine months of 2026, up more than sevenfold YoY, and at its October 19 extraordinary shareholders' meeting projected net profit attributable to shareholders of RMB 131–132.5 billion for the first nine months of 2026, a sharp reversal from a net loss of RMB 5.3 billion in the same period last year. According to Eastmoney, third-quarter net profit is expected to rise just 1–4% QoQ to RMB 53.40–54.90 billion, with Q3 revenue projected at RMB 114.69–119.69 billion, up 15.25–20.28% QoQ — a sharp slowdown from 1H26, when net profit more than doubled to RMB 52.84 billion in 2Q26. Eastmoney attributes the cooling momentum to moderating DRAM price gains, which may narrow room for further profit expansion. Per 36Kr, DDR and LPDDR ASPs climbed 61% and 24.46% YoY in 2025, driving revenue growth of 515.36% and 105.59% respectively; in 1H26, DDR and LPDDR revenue reached RMB 69.47 billion and RMB 78.19 billion respectively. Peer module maker Longsys saw net profit climb from RMB 3.86 billion in 1Q26 to RMB 6.72 billion in 2Q26, but its 3Q profit is expected at RMB 3.42–4.32 billion, a sequential decline of up to 49%. TrendForce projects more moderate contract price increases of 13–18% QoQ for conventional DRAM and 10–15% for NAND Flash in 3Q26, noting record-high memory prices are pushing PC and smartphone customers toward affordability limits. CXMT said its Hefei and Beijing fabs continue to run at high utilization with full order books; it currently operates two 12-inch DRAM fabs in Hefei and one in Beijing, each with monthly capacity of up to 100,000 wafers, is expanding its Hefei testing facility and developing new DRAM and HBM production lines in Shanghai, and its 1H26 depreciation expenses rose 27.85% YoY to RMB 14.51 billion. Whether CXMT can sustain earnings momentum hinges on its October 31 results and the trajectory of fourth-quarter DRAM prices.
DRAMDDRLPDDRCXMT, LongsysTrendForce

Sun, Oct 18

00:03Impact score 58
CXMT Accelerates 4F² DRAM Push, Eyes Year-End Server DDR5 RDIMM Launch. 📰 News Source: https://buff.ly/OJ0wYZE
According to a TrendForce post dated October 17, 2026, CXMT is accelerating its 4F² DRAM push and is eyeing a year-end launch of server DDR5 RDIMM. The source is a headline-only brief that provides no technical details, capacity figures, degree of progress, or cause; the year-end launch remains a plan rather than an achieved result.
4F² DRAMserver DDR5 RDIMMCXMTTrendForce Official (Market Data)Capacity Change

Fri, Oct 16

10:19Impact score 55
CXMT targets DDR5 RDIMMs by end of 2026; SiCarrier showcases China's advanced chipmaking equipment
China's leading DRAM manufacturer CXMT has disclosed progress in its 4F² DRAM architecture and plans to introduce DDR5 registered dual in-line memory modules (RDIMMs) by the end of 2026, drawing renewed attention to the country's development of next-generation memory technologies. The source does not state the cause. The plan remains planned status; no volume production or shipments are reported.
DDR5 RDIMMCXMTDigiTimes Asia

Wed, Oct 14

20:03Impact score 0
ASML Shipments to China Surge to 23% of System Sales in Q3 2026
ASML's Q3 2026 financial results show shipments to China surged to 23% of system sales, up from 14% in the previous quarter, becoming one of its strongest areas. Chinese semiconductor manufacturers are rushing to stockpile more tools. Taiwan remains the largest buyer at 32%, followed by South Korea at 31%. The United States is reportedly pressuring the Dutch government to completely halt tool exports to China. CXMT and YMTC have secured sufficient DUV lithography tools from ASML to support their growth plans for the next three years.
shipments to Chinasystem salesASML, Chinese semiconductor manufacturers and 4 totalTechPowerUpInventory Shift

Tue, Oct 13

19:00Impact score 60
CXMT president says company’s first 4F² DRAM will be a server DDR5 RDIMM due by year-end
CXMT president Cao Kanyu announced that the company's first 4F² DRAM product will be a server DDR5 RDIMM, expected to launch by the end of the year; the announcement was made at the Integrated Chips and Chiplets Conference on Saturday, and the article was published on 13 October 2026. The memory uses vertical transistors to reduce the cell footprint by about one-third on paper, but no speeds or capacities have been announced yet. CXMT expects to sell a memory cell that Samsung and SK hynix have only shown in research papers. The source does not state the cause of the announcement.
4F² DRAMCXMTTom's Hardware

Mon, Oct 12

11:57Impact score 15
#CXMT is setting its sights on a bigger prize: server DRAM. Long focused on consumer memory, the Chinese chipmaker is now betting on 4F² tech to brea...
CXMT is pivoting to server DRAM using 4F² architecture, targeting DDR5 RDIMMs by year-end. This strategic shift challenges Samsung and SK hynix in the high-margin server market. Traders should monitor for future capacity expansion and pricing pressure.
DDR5RDIMMDRAMCXMT, Samsung Electronics and 3 totalTrendForce Official (Market Data)Technical
09:59Impact score 58
CXMT targets 2026 debut of 4F² DDR5 RDIMM in bid to challenge server DRAM rivals
China's ChangXin Memory Technologies (CXMT) plans to introduce DDR5 registered DIMMs (RDIMMs) based on its new 4F² DRAM architecture by the end of 2026, advancing its efforts to increase memory density and compete in the higher-value server market. The event is planned and has not yet been realized.
DDR5 RDIMMCXMTDigiTimes Asia