STMicroelectronics' 3-A gate drivers, featuring an internal active Miller clamp, can handle SiC MOSFETs at high voltages and simplify high-voltage power converters. The source does not state pricing, supply, or market impact details.
STMicroelectronics reported third-quarter 2026 revenue of US$3.76 billion, above the midpoint of its guidance, as AI data center and low Earth orbit (LEO) satellite demand lifted communication equipment and computer peripheral sales by 64% year-over-year. Gross margin reached 37.3%, up 410 basis points from a year earlier, and non-US GAAP earnings per share came in at US$0.37. Free cash flow was US$351 million. The headline further notes that margin recovery awaits a fab overhaul, which the body text does not elaborate on.
STMicroelectronics is turning a demand recovery into stronger factory economics, with communications and embedded-processing products driving the improvement. Yet the widening loss in its power semiconductor business shows that higher sales have not restored portfolio-wide profitability, leaving manufacturing utilization and product mix central to the next stage of the recovery. The source does not state the cause.
STMicroelectronics is weighing whether to develop more powerful MCUs and MPUs for humanoid robots, but has not made a decision. According to the source, with humanoid robot designs still evolving and volumes low, the company is watching how the market develops before deciding what to build. No timeline, specific product models or investment amounts are given; the matter remains at the evaluation/consideration stage and is not a confirmed development plan.
ST has launched an automotive sensor platform that combines multi-axis accelerometers and angular-rate sensors in a single package, designed to extend active and passive safety systems and driver-assistance features across vehicle categories from premium to mass-market, with applications including crash protection, rollover detection, airbag deployment, vehicle stability control, and radar beam stabilization. The sensors feature internal diagnostics and support SafeSPI, a serial peripheral interface for automotive safety, and are ST's first four offerings following its integration of NXP's sensors division: NCS1012BAEP (z-axis (yaw) angular-rate sensor and xy low-g accelerometer), NCS1012CAEP (x-axis (roll) angular-rate sensor and yz low-g accelerometer), NCS1012EAEP (x-axis (roll) angular-rate sensor and xy medium-g accelerometer), and NCS10135AEP (z-axis (yaw) angular-rate sensor and xyz low-g accelerometer). Angular-rate sensors offer full-scale ranges of ±125 dps, ±250 dps, or ±350 dps, with integrated low-pass filtering (12.5–400-Hz cutoff options) and operation from −40°C to +105°C; low-g accelerometers cover ±1.50 g to ±34 g, while medium-g versions cover ±15.5 g to ±150 g and feature an independent signal chain to minimize noise. The combo sensors are now in production in 24-pin QFN packages with wettable flanks.
STMicroelectronics has announced automotive safety combination sensors for mass-market applications, combining multi-axis accelerometers and gyroscopes (angular rate sensors) in a single package for active and passive safety systems covering use-cases such as crash protection, rollover detection, airbag deployment, vehicle stability controls and radar beam stabilization. These are the first mass-market products launched following ST's acquisition of the NXP automotive and industrial MEMS sensors business in early 2026, a move completed to expand its own MEMS sensors capabilities. The four new sensors—NCS1012BAEP, NCS1012CAEP, NCS1012EAEP and NCS10135AEP—are in production now, in 24-pin QFN 6mm x 6mm x 1.90mm packages, ISO 26262 compliant, supporting SafeSPI, with an automotive temperature range of −40°C to +105°C; the integrated angular rate sensors offer full-scale ranges of ±125 dps, ±250 dps or ±350 dps, the low g acceleration sensors have a nominal full-scale range from ±1.50 g to ±34 g, and the medium g acceleration sensors from ±15.5 g to ±150 g. ST guarantees product availability for at least 15 years. Omdia Senior Research Analyst Nora Houlihan said that thanks to ADAS, IMUs are expected to grow at a 17.7% CAGR (2025-30).
Power Electronics News published a roundup of this week's articles covering practical EMI guidance for power converters, FinFET-based power devices, and simulation-driven thermal modeling for SiC and GaN converters. The roundup also lists news items: Navitas launched a 2300-V SiC power module for grid infrastructure, with the 2300 V SiC technology targeting higher efficiency and power density in AI data centers, energy storage, and grid applications; Allegro introduced 48V power management and precision position sensors for robotics, helping humanoid robots with integration, motion control, and functional safety; EPC GaN FETs enable a 4 kW high-efficiency converter, where the dual-phase EVAL-LT7930-AZ combines ADI's LT7930 controller with EPC2361 transistors for high-current power conversion; STMicroelectronics launched a QML-V qualified LVDS receiver, the RHFLVDS42, supporting data rates up to 600Mbps, 300krad(Si) radiation resistance, and 8kV ESD immunity for aerospace systems; onsemi and Sungrow target 99.3% efficiency in utility-scale BESS, where the PowerTitan 3.0 platform supports conversion units up to 450 kW and could save over 475 MWh annually in a 100 MW installation. The articles section also covers a GaN-based dual-side cooled package for 650-V GaN in 800-V AI data centers. This item is an informational roundup with no price or supply-demand data.
STMicroelectronics has IGBT power modules geared for air conditioners, heat pumps, and home appliances. The company's compact 20-A intelligent power modules integrate control and drive stages with smart control and protection features in compact, top-cooled SLLIMM modules. The source does not provide pricing, capacity, or availability timing information.
STMicroelectronics, headquartered in Geneva, Switzerland, has extended its MasterGaN integrated transistor/driver family with new MasterGaN7 devices that contain 650V enhancement-mode gallium nitride (GaN) transistors with a 6A maximum current rating. The source does not state the cause. The new series is intended to help designers boost efficiency and power density in applications such as power adapters, chargers, industrial lighting equipment, and solar micro-inverters.
In an interview at SEMICON West 2026, Soitec Chief Product Officer René Jonker discussed the company, which was spun out of CEA-Leti in 1992 around the Smart Cut process. Soitec now runs five main technology platforms: RF-SOI (used in RF switches and low-noise amplifiers in practically every 5G phone and Wi-Fi module), FD-SOI (used in automotive radar, IoT microcontrollers and edge devices, often cutting power by 30 to 50 percent without a node shrink), Power-SOI (high-voltage automotive and industrial circuits), POI (acoustic RF filters for 5G and 6G), and Photonics-SOI, developed a decade ago and now the platform carrying the company. Jonker said Photonics-SOI is 'now seen as the new gold'; as AI cluster connectivity pushes traffic from copper to fiber, it is driving Soitec's business 'with a very impressive growth rate' and underpins the co-packaged optics now coming into AI data centers. The article notes that Soitec trades on Euronext Paris and that an investor who put $100 into its stock in January 2026 was holding more than $600 by early October. On competition, Jonker said direct competition comes mostly from GlobalWafers, which 'has or used to have access to our IP,' while technology-level competition includes FD-SOI customers who could choose FinFET at TSMC, and a trade-off between silicon and indium phosphide for optical waveguides. SmartSiC (lowering the cost of SiC power devices for EV inverters) and RF-GaN on insulator (in development for 6G power amplifiers and aerospace) remain in development, and FD-SOI is moving to smaller geometries.
STMicroelectronics has extended its MasterGaN integrated transistor/driver family with new MasterGaN7 devices that contain 650V enhancement-mode GaN transistors with a 6A maximum current rating. The new series targets applications such as power adapters, chargers, industrial lighting equipment, and solar microinverters, helping designers boost efficiency and power density. MasterGaN7 connects the two 650V GaN transistors in half-bridge configuration with a high-voltage, high-frequency gate driver in a QFN package that shares its pinout and footprint with other MasterGaN devices; it introduces low drop-out (LDO) regulators to stabilize the gate-drive voltage and features a pin-driven shut-down mode with ultra-fast wakeup to minimize no-load power consumption. The new devices offer 45ns propagation delay and can operate at switching frequencies of up to 2MHz, requiring only small external magnetic and passive components to minimize circuit footprint, lower BOM costs, and maximize power density; an integrated bootstrap diode supplies the high-side driver. All MasterGaN devices support topologies including active clamp flyback, asymmetrical half bridge, inverse buck, resonant LLC, power factor correction (PFC) converters, and DC-to-AC inverters, with protection including interlocking against cross-conduction, undervoltage lock-out (UVLO), and thermal shutdown. The source does not state pricing or availability timing.
STMicroelectronics, together with the National University of Singapore (NUS), is launching the HELIX research program, which will explore how memory, processing and software can be designed together for real-time embedded AI. This is a research collaboration development; the source does not state the cause, and no price, capacity or shipment figures are involved.
STMicroelectronics announced it has expanded its space-grade semiconductor portfolio with the RHFLVDS42, a QML-V-qualified quad low-voltage differential signaling (LVDS) receiver for high-speed data links in aerospace and space systems. The device offers data rates up to 600 Mbps, operates from a supply voltage of 2.3V to 3.6V, complies with TIA/EIA-644 and relevant JEDEC requirements, and has an input common-mode voltage range from -4V to +5V with an absolute maximum voltage rating of 4.8V. For radiation performance, according to STMicroelectronics, it provides SEL-free operation at a LET of 122.6 MeV·cm²/mg and SET- and SEU-free performance at 61.3 MeV·cm²/mg, qualifies under the RHA QML-V framework for total ionizing doses up to 300 krad (Si), and provides 8kV ESD immunity. The device is manufactured at ST's Rennes facility in France using 130nm CMOS technology, which the company says it has used in space-related applications for more than a decade, carries an EAR99 export classification, supports an operating temperature range of -55°C to +125°C, comes in a grounded-lid hermetic Flat-16 package, and a bare-die option is also available.
STMicroelectronics announced the RHFLVDS42, a QML-V qualified quad low-voltage differential signaling (LVDS) receiver for aerospace applications. The receiver enables data exchange at up to 600Mbps, operates over a wide voltage range from 2.3V to 3.6V, conforms to the latest TIA/EIA-644 and JEDEC low-voltage logic and power supply norms, and retains compatibility with legacy CMOS designs. Its input common-mode voltage range extends from -4V to +5V, and the absolute maximum voltage rating (AMR) is 4.8V. The device offers SEL-free (single event latch-up) operation at 122.6 MeV.cm²/mg, SET/SEU-free operation at 61.3 MeV.cm²/mg, stability per RHA QML-V at up to 300krad TID (Si), and 8kV ESD immunity. It is manufactured in Rennes, France, using ST's 130nm CMOS technology, and meets EAR99 export administration regulations, fitting supply-chain arrangements for organizations worldwide, including the USA and Asia. It operates from -55°C to +125°C, is supplied in a grounded-lid Flat-16 hermetic package, and can also be supplied as bare die.
STMicroelectronics revealed the LPS27DEWO, a two-in-one MEMS sensor combining altitude and underwater-depth monitoring over 50 meters in a single device that saves space, simplifies circuitry, and trims bill-of-materials costs in wearables and outdoor equipment. With two selectable full scales in one compact package, it suits sports cameras, smart rings, smartwatches, and other outdoor and underwater equipment. Its extended underwater pressure range of 6060hPa provides accurate information for recreational and enthusiast divers when ascending from below 40 meters – the critical depth for decompression – and the sensor remains robust at water-pressure depths of up to 110 meters. It features a 2.7mm x 2.7mm 10-lead LGA footprint in a 1.7mm-high cylindrical metal lid package, ±0.5% accuracy at full-scale, and a new black potting gel that eliminates light-induced error; it supports 1.2V I2C, SPI, and I3C digital interfaces with very low operating current of just 1.7µA at 3.8Pa.
STMicroelectronics launched the SLLIMM Compact series, featuring the 20A STGI15C60S module with a 30% smaller footprint. This targets low/medium power motor drives in appliances and HVAC. The launch signals a new product cycle but has no immediate impact on existing component pricing.
STMicroelectronics introduces the VD56GA 1.1 MP automotive image sensor with 60% higher infrared sensitivity. The sensor targets cost-effective driver and occupant monitoring for high-volume platforms. Bullish: The launch supports scaling DMS/OMS systems, likely boosting future demand for automotive image sensors.
STMicroelectronics launched the L4983 PFC controller targeting kW-level power supplies with peak efficiency of 97.4% on the evaluation board. The device integrates advanced protection and efficiency modes for industrial and server applications. Neutral: New product introduction with no immediate impact on spot prices or supply chain constraints.
PDF Solutions will host CONNECT 2026 in October 2026, focusing on AI applications in semiconductor manufacturing. The Exensio Aurora platform aims to analyze petabyte-scale data and address fragmented manufacturing information. The conference highlights the potential of AI to improve manufacturing efficiency but does not yet show immediate impact on spot prices or supply.
FSP launches the Mega GM 1200W PSU at $229 with limited US availability. The unit features an in-house platform and Japanese capacitors, exceeding Gold efficiency ratings. Bullish for Japanese capacitors; watch for US supply constraints.
Whose chips are really inside the hottest new products? We open them up and show you, one part at a time.
iPhone DuoFirst-pass BOM: 37 parts, 12 brands and 16 public MPNs; A20 Pro, C2, N1 and the power/RF chains are located, while the NAND brand stays unconfirmed.See the full teardownAll teardowns