NuAxi Stream - Real-Time Semiconductor Intelligence

Wed, Dec 4

05:08Impact score 25
ST supplying silicon carbide power modules to Renault for Ampere’s EVs
STMicroelectronics has secured a multi-year supply agreement starting in 2026 to provide its silicon carbide power modules to Renault Group for use in Ampere's electric vehicles. This deal extends an existing strategic cooperation between the companies. Neutral: This confirms long-term demand visibility for ST's SiC products but does not indicate an immediate supply constraint or price impact for the broader market.
Silicon Carbide Power ModulesSTMicroelectronicsSemiconductor TodayPartnership/M&A

Wed, Sep 25

18:10Impact score 25
ST unveils fourth-generation silicon carbide power technology for next-gen EV traction inverters
STMicroelectronics has launched its fourth-generation STPOWER SiC MOSFET technology, optimized for EV traction inverters. The announcement is part of the company's roadmap to introduce further SiC innovations through 2027. Neutral: This is a long-term technology roadmap update with no immediate, specific impact on current supply, demand, or pricing for existing SiC components.
SiC MOSFETSTMicroelectronicsSemiconductor TodayProduct Launch

Thu, Jun 20

20:41Impact score 10
ST remains largest silicon carbide power device maker, with 32.6% market share
TrendForce reports STMicroelectronics maintained its leading position in the SiC power device market in 2023 with a 32.6% share, followed by onsemi, Infineon, Wolfspeed, and ROHM. The market's strong growth was primarily driven by demand from battery electric vehicles (BEVs). Neutral: This market share consolidation report provides background on competitive positioning but does not signal an immediate supply, demand, or price shock for traders.
Silicon Carbide Power DevicesSTMicroelectronics, onsemi and 5 totalSemiconductor TodayMarket Analysis

Wed, Jun 5

16:07Impact score 45
Geely and ST set up joint lab and sign multi-year SiC device supply deal
STMicroelectronics and Geely Auto Group have signed a multi-year silicon carbide (SiC) supply agreement and established a joint lab. This deepens their existing cooperation to support Geely's EV electrification strategy. Bullish: This long-term deal locks in significant future demand for ST's SiC devices, tightening supply availability for the broader spot market.
SiC MOSFETSTMicroelectronicsSemiconductor TodayPartnership/M&A

Mon, Apr 22

23:05Impact score 45
ROHM’s SiCrystal and ST expand silicon carbide wafer supply agreement
ROHM's subsidiary SiCrystal has expanded its multi-year supply agreement with STMicroelectronics to provide larger volumes of 150mm silicon carbide substrate wafers, with a minimum expected value exceeding $230 million. This secures a long-term, high-volume supply of a critical raw material for ST's SiC power device manufacturing. Neutral: This locks in supply for a key player but does not immediately alter the broader market's supply-demand balance or price trajectory.
150mm SiC Substrate WafersSTMicroelectronics, ROHM Co., Ltd. and 3 totalSemiconductor TodayPartnership/M&A

Sat, Dec 23

00:45Impact score 45
ST supplying silicon carbide MOSFETs to Li Auto
STMicroelectronics has signed a long-term supply agreement to provide its silicon carbide MOSFETs to Chinese EV maker Li Auto. This deal supports Li Auto's strategy for high-voltage battery electric vehicles across multiple segments. Bullish: This secures a major, predictable demand stream for ST's SiC products, tightening supply for other buyers and supporting price stability or increases in the SiC power device market.
Silicon Carbide MOSFETSTMicroelectronicsSemiconductor TodayPartnership/M&A

Fri, Dec 22

23:43Impact score 15
ST’s latest 8x8 multi-zone ToF ranging sensor boosts ambient-light immunity, extends range and cuts power consumption
STMicroelectronics has launched the VL53L8CX, an 8x8 multi-zone ToF sensor with improved ambient-light immunity, extended range, and lower power consumption. This is a routine next-generation product update within ST's sensor portfolio. Neutral: This launch is unlikely to cause immediate supply-demand shifts or price changes for existing components.
Time-of-Flight (ToF) SensorSTMicroelectronicsSemiconductor TodayProduct Launch

Wed, Dec 13

18:15Impact score 45
Purdue wins silicon carbide patent infringement lawsuit against ST
A US jury found STMicroelectronics infringed a Purdue University silicon carbide patent, awarding $32.5 million in past damages and a running royalty on future sales. The verdict introduces legal and financial uncertainty for ST's SiC product line, a key growth segment. Watch: The ruling could increase ST's costs and create supply chain uncertainty for SiC components, pending appeals and royalty rate determinations.
Silicon Carbide (SiC)STMicroelectronicsSemiconductor TodayPolicy/Regulation

Tue, Dec 5

06:50Impact score 15
ST extends MasterGaN performance with new 200W and 500W devices
STMicroelectronics has launched new MasterGaN1L and MasterGaN4L integrated GaN bridge devices targeting 200W and 500W power supply designs. This represents a next-generation product line extension aimed at simplifying design and meeting eco-design targets. Neutral: This is a standard product refresh with no immediate indication of supply constraints or direct pricing impact for traders.
GaN Power ICsSTMicroelectronicsSemiconductor TodayProduct Launch

Thu, Oct 26

16:21Impact score 20
ST launches 32-pin, dual-inline, molded, through-hole package silicon carbide power modules
STMicroelectronics has launched the ACEPACK DMT-32 family of silicon carbide power modules in a new 32-pin through-hole package. The modules target automotive applications like on-board chargers and DC/DC converters, emphasizing high power density and simplified assembly. Neutral: This is a standard product launch with no immediate impact on supply, demand, or pricing for existing SiC components.
SiC Power ModuleSTMicroelectronicsSemiconductor TodayProduct Launch

Thu, Jul 13

23:42Impact score 25
ST begins volume production of PowerGaN HEMTs
STMicroelectronics has commenced volume production of its e-mode PowerGaN HEMT devices for high-efficiency power conversion systems. This move aims to serve growing demand in applications like chargers, industrial power supplies, and automotive electrification. Neutral: The launch increases GaN component availability but does not indicate an immediate supply-demand imbalance for traders.
GaN HEMTPower TransistorsSTMicroelectronicsSemiconductor TodayProduct Launch

Wed, Jun 21

00:33Impact score 10
Airbus and ST collaborate on SiC and GaN power electronics for aircraft electrification
Airbus and STMicroelectronics have signed an R&D cooperation agreement focused on SiC and GaN power electronics for aircraft electrification. The collaboration aims to develop more efficient and lighter power systems for future hybrid and fully electric aircraft. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, demand, or pricing for traders.
SiC Power DevicesGaN Power DevicesSTMicroelectronicsSemiconductor TodayTechnical

Wed, Jun 7

22:45Impact score 58
ST and Sanan creating 200mm SiC device fab JV in China
STMicroelectronics and Sanan Optoelectronics have agreed to create a new 200mm silicon carbide device manufacturing joint venture in Chongqing, China. This move aims to secure a localized supply of SiC devices for the Chinese market, leveraging Sanan's existing SiC substrate production. Bearish: This JV represents a significant capacity addition, potentially easing long-term supply constraints and putting downward pressure on SiC device pricing.
SiC MOSFETSiC Power DeviceSTMicroelectronics, Sanan Optoelectronics Co LtdSemiconductor TodayCapacity Change

Mon, Apr 17

16:15Impact score 45
Multi-year deal signed for ST to supply silicon carbide devices to ZF
STMicroelectronics has signed a multi-year contract to supply 'double-digit millions' of silicon carbide devices to ZF Friedrichshafen for its new modular inverter architecture entering series production in 2025. This secures long-term, high-volume demand for ST's SiC products, leveraging its vertically integrated manufacturing. Bullish: This locks in significant future demand for ST's SiC capacity, reducing market availability and supporting pricing power for these components.
Silicon Carbide (SiC) MOSFETsAutomotive Power ModulesSTMicroelectronicsSemiconductor TodayPartnership/M&A

Thu, Mar 23

01:35Impact score 15
ST extends VIPerGaN power converter range to 65W and 100W
STMicroelectronics has launched two new GaN-based power converter ICs, the VIPerGaN100 and VIPerGaN65, targeting applications up to 100W and 65W respectively. The expansion of its VIPerGaN family aims to address demand for more efficient power supplies in consumer and industrial segments. Neutral: This is a routine product line extension with no immediate, direct impact on supply, demand, or pricing of existing components.
GaN Power ICsPower ConvertersSTMicroelectronicsSemiconductor TodayProduct Launch

Mon, Dec 12

23:56Impact score 25
ST boosts EV performance and driving range with new silicon carbide power modules
STMicroelectronics has launched its ACEPACK DRIVE silicon carbide power modules, which are now in production and have been selected for Hyundai's E-GMP EV platform. This launch targets the high-growth EV market to improve vehicle performance and range. Neutral: This is a standard product launch that may incrementally increase SiC demand but does not signal an immediate supply constraint or price shock for traders.
Silicon Carbide (SiC) Power ModulesSTMicroelectronicsSemiconductor TodayProduct Launch

Thu, Dec 1

22:03Impact score 10
ST to qualify Soitec’s silicon carbide substrate technology over next 18 months
STMicroelectronics plans to qualify Soitec's SmartSiC substrate technology over the next 18 months, targeting future adoption for its 200mm SiC manufacturing. This is a long-term R&D and supply chain partnership aimed at securing advanced substrate supply for ST's power device and module business. Neutral: This is a multi-year technical qualification with no immediate impact on current SiC wafer or device supply, pricing, or trader inventory decisions.
Silicon Carbide (SiC) SubstratesSTMicroelectronics, SoitecSemiconductor TodayTechnical

Thu, Oct 6

04:54Impact score 15
SemiQ launches 1200V 40mΩ SiC MOSFET
SemiQ has launched a second-generation 1200V 40mΩ silicon carbide MOSFET, expanding its portfolio of SiC power devices. This is a standard product introduction by a smaller player in the SiC market, adding to the available supply of discrete power components. Neutral: This launch does not materially alter the supply-demand balance or pricing dynamics for SiC MOSFETs, which are dominated by larger manufacturers like Wolfspeed and STMicroelectronics.
SiC MOSFETSemiQSemiconductor TodayProduct Launch

Wed, Oct 5

21:40Impact score 60
ST to build €730m silicon carbide wafer factory in Catania, Italy
STMicroelectronics announced a €730 million investment to build an integrated silicon carbide (SiC) wafer manufacturing facility in Catania, Italy, with production starting in 2023. This move aims to secure substrate supply for the growing demand from automotive and industrial electrification. Bearish: This significant capacity expansion for a key bottleneck material (SiC substrates) increases long-term supply, potentially easing price pressures and reducing supply chain risk premiums for SiC devices.
Silicon Carbide (SiC) WafersSiC MOSFETsSiC DiodesSTMicroelectronicsSemiconductor TodayCapacity Change

Thu, Aug 11

15:15Impact score 7
Catania and ST launch Advanced Master’s Program in Power Electronics Devices and Technologies
The University of Catania and STMicroelectronics have launched an advanced master's program in Power Electronics Devices and Technologies to expand the skilled workforce in this field. The initiative targets key industrial sectors like automotive and renewable energy, which are major drivers of demand for power semiconductors. Neutral: This is a long-term educational effort with no immediate impact on component supply, pricing, or trader decisions.
Power SemiconductorsWide-Bandgap SemiconductorsSTMicroelectronicsSemiconductor TodayTechnical

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
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MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

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