Sandia reports GaN diode with record 6.4kV breakdown ultrafast devices step to protecting the grid from EMPs
Sandia National Labs has demonstrated a vertical GaN p-n diode with a record 6.4kV breakdown voltage, designed for ultrafast surge protection in grid applications. This is a research milestone aimed at developing future devices capable of handling up to 20,000V to protect against EMPs. Neutral: This is a lab-stage R&D result with no immediate impact on commercial GaN supply, demand, or pricing for traders.
- Impact score
- 8 / 100, low impact