NuAxiSemiconductor trade intelligence
II-VI qualifies 1200V SiC MOSFET platform to automotive standards and expands relationship with GE
What happened
II-VI has qualified its 1200V SiC MOSFET platform to automotive standards and signed a three-year technology access agreement with GE Research. This move aims to accelerate customer design-in activities for its SiC power devices. Neutral: This is a long-term R&D and qualification milestone with no immediate, direct impact on spot market supply, demand, or pricing for electronic components.
Impact and signal
Low impactImpact score: 15/100
Affected components and suppliers
SiC MOSFETSiC Substrates
II-VI Inc
qualificationautomotivepartnership
Source and time
Source: Semiconductor Today · 2/2/2022 · View original source
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