Mitsubishi Electric develops SBD-embedded SiC-MOSFET with new structure for power modules
Mitsubishi Electric announced a new SBD-embedded SiC-MOSFET structure and began shipping samples of its 3.3kV full-SiC power module on May 31. The technology targets railway traction and DC power systems, aiming to improve energy efficiency and system downsizing. Neutral: This is a long-term R&D milestone with no immediate impact on supply, demand, or pricing of existing power semiconductor components.
- Related manufacturers
- Mitsubishi Electric Corp
- Part numbers
- FMF 800 DC-66 BEW
- Impact score
- 20 / 100, low impact