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Innoscience and University of Bern develop multi-level topology reference demo
What happened
Innoscience Technology collaborated with Bern University of Applied Sciences to develop a reference design using its 650V InnoGaN HEMT devices in a multi-level topology for high-voltage applications like EV fast chargers and solar inverters. This is a technical R&D milestone showcasing potential future applications for GaN power semiconductors. Neutral: This is a long-term technology demonstration with no immediate impact on supply, demand, or pricing for trading.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN HEMTPower Transistors
Innoscience Technology
product-launchR&DGaN
Source and time
Source: Semiconductor Today · 5/10/2023 · View original source
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