NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Oct 23

06:51Impact score 60
Merck Expands Molybdenum Use to DRAM and Logic Chips
Germany's Merck plans to expand the use of molybdenum dioxide dichloride (MoO₂Cl₂) precursors from NAND flash memory to DRAM and logic semiconductors. Bing Han, senior vice president of the Thin Film Materials business at Merck Electronics, said at a press conference at Sono Felice Samsung in Gangnam on Oct. 21 that as device structures shrink, conductivity issues with copper and tungsten will drive greater adoption of molybdenum. Merck has established a molybdenum precursor production facility in Eumseong, North Chungcheong Province, which will be integrated with its CHEMKEEPER Vapor 200 materials delivery systems made at its Ansan plant and offered as a turnkey solution. The expansion uses land near an existing plant of M Chemicals, which Merck acquired in 2023; the site previously produced hafnium-based high-k dielectric precursors, construction began in 2024, and the facility was prepared for operation within two years. Han said Merck is planning production capacity sufficient to meet all demand from Korean customers, but the company did not disclose specific production capacity or investment figures, and it plans to eventually expand support beyond Korea to customers across Asia. As background: Samsung Electronics began using molybdenum in its 200-layer-class NAND in 2024, and SK hynix has replaced some word-line materials with molybdenum in its 300-layer-class NAND; Lam Research, Tokyo Electron and Applied Materials are among the suppliers of molybdenum deposition equipment. Hein said Merck is reviewing production capacity with customers in preparation for semiconductor materials consumption potentially doubling within the next five years.
NAND flash memoryDRAMlogic semiconductorsMerck, Merck Electronics and 4 totalThe ElecCapacity Change
06:49Impact score 40
HPSP Adopts Co-CEO Structure
On Oct. 22, HPSP held an extraordinary shareholders' meeting at its headquarters in Hwaseong, Gyeonggi Province, where shareholders approved Kim Jae-hyun as new CEO with 96.3% voting in favor and 3.7% voting against or abstaining; his term is two years and five months. Kim Jae-hyun, former CEO of Hanwha Semitech, will serve alongside incumbent CEO Kevin Ki-doo Lee under a co-CEO structure. The source does not state the cause. Kim previously worked at Applied Materials Korea, Samsung Electronics, Lam Research and Wonik IPS, spanning front-end and back-end semiconductor equipment, and served as CEO of Hanwha Semitech from Nov. 2, 2025. Shareholders also approved amendments to the articles of incorporation concerning strategic investments and acquisitions of shares in other companies, primarily establishing a clearer basis for issuing new shares to third parties for business purposes; the proposal passed with 98.1% in favor and 1.9% against or abstaining. An HPSP official said the company is considering options including mergers and acquisitions (M&A) to strengthen its capabilities in high-pressure gases used in HPA and related gas technologies, and that the amendments establish an institutional framework for future M&A transactions or acquisition financing; HPSP has approximately 250 billion won in cash equivalents and short-term financial assets available for potential M&A and related investments. HPSP is the global leader in high-pressure hydrogen annealing (HPA) equipment, with customers including major memory semiconductor manufacturers and foundries worldwide, and plans to accelerate semiconductor equipment R&D under Kim's leadership.
high-pressure hydrogen annealing (HPA) equipmentHPSPThe Elec
04:32Impact score 45
EU mulls sanctions reprieve for Chinese fabric-maker accused of aiding Russia
This week, diplomats from the EU's 27 member states were pressured to lift sanctions on Yusha Group, a Chinese textiles manufacturer accused of selling sensitive European technology to Russian buyers. In exchange, according to multiple sources familiar with the affair, Beijing has pledged that the company will refrain from shipping banned items to Russian military-linked buyers, and will remove German company Sindlhauser Materials from its own export controls list. The matter remains under consideration as a proposed reprieve; the lifting of sanctions has not been implemented.
textilesYusha Group, Sindlhauser MaterialsSCMP TechnologyPolicy/Regulation
01:00Impact score 0
From Sequential R&D to Trusted Co-Innovation: The EPIC Model for Semiconductor Innovation
On October 12, 2026, Applied Materials President and CEO Gary Dickerson delivered a keynote at the unveiling of the EPIC Center in Sunnyvale, CA, advocating for a shift from sequential R&D to trusted co-innovation. The EPIC Center is intended to bring Applied Materials and industry partners together to work on next-generation materials, processes, and equipment.
next-generation materials, processes and equipmentApplied MaterialsSemiWikiPartnership/M&A

Thu, Oct 22

23:00Impact score 30
Navitas Launches 2300-V SiC Power Module for Grid Infrastructure
Navitas Semiconductor has introduced the G4H08MT23GB4 family of 2300 V silicon carbide (SiC) full-bridge power modules designed for energy conversion and grid infrastructure, based on the industry-standard SiCPAK™ form factor, featuring an on-state resistance (RDS(on)) of 8 mΩ and built on Navitas' fourth-generation GeneSiC™ Trench-Assisted Planar™ (TAP) technology. The family extends Navitas' ultra-high-voltage SiC portfolio, which includes 2300 V and 3300 V devices, with target applications including solid-state transformers (SSTs), grid-scale battery energy storage systems, solar inverters, megawatt EV charging infrastructure, and high-voltage DC-DC conversion. The modules incorporate an aluminum nitride (AlN) active-metal-brazed (AMB) substrate for heat spreading and electrical isolation exceeding 5 kV; epoxy-resin potting reduces internal mechanical stress and helps limit moisture and contaminant ingress, and per Navitas the material offers ten times the thermal conductivity of silicone gel. High-current press-fit pins provide twice the current-carrying capability per pin versus standard press-fit connections, and an optional pre-applied thermal interface material (TIM) is available. The family is scheduled for qualification under Navitas' AEC-Plus reliability benchmark, which extends testing beyond AEC-Q101 and JEDEC requirements; samples of the G4H08MT23GB4(HC) family, including high-current variants and pre-applied TIM options, are available immediately, and engineers can request the EVB-UHVSIC-GB-E-DPT-1 double-pulse test system. The source does not state pricing or a volume-production timeline.
2300 V silicon carbide (SiC) full-bridge power modulesNavitas SemiconductorPower Electronics News
21:55Impact score 40
STMicroelectronics adds MasterGaN7 devices to integrated high-efficiency power family
STMicroelectronics has extended its MasterGaN integrated transistor/driver family with new MasterGaN7 devices that contain 650V enhancement-mode GaN transistors with a 6A maximum current rating. The new series targets applications such as power adapters, chargers, industrial lighting equipment, and solar microinverters, helping designers boost efficiency and power density. MasterGaN7 connects the two 650V GaN transistors in half-bridge configuration with a high-voltage, high-frequency gate driver in a QFN package that shares its pinout and footprint with other MasterGaN devices; it introduces low drop-out (LDO) regulators to stabilize the gate-drive voltage and features a pin-driven shut-down mode with ultra-fast wakeup to minimize no-load power consumption. The new devices offer 45ns propagation delay and can operate at switching frequencies of up to 2MHz, requiring only small external magnetic and passive components to minimize circuit footprint, lower BOM costs, and maximize power density; an integrated bootstrap diode supplies the high-side driver. All MasterGaN devices support topologies including active clamp flyback, asymmetrical half bridge, inverse buck, resonant LLC, power factor correction (PFC) converters, and DC-to-AC inverters, with protection including interlocking against cross-conduction, undervoltage lock-out (UVLO), and thermal shutdown. The source does not state pricing or availability timing.
MasterGaN7STMicroelectronicsEE Journal
20:00Impact score 85
Micron pulls the plug on future 4F² DRAM after two decades of research in dramatic shift
On 22 October 2026, Micron announced it will abandon future 4F² DRAM after roughly two decades of research. The company says the architecture offers no meaningful density advantages, increases manufacturing complexity and costs, and has fundamental scaling limitations; CTO Scott DeBoer said capacitor pitch, not nominal transistor area, determines DRAM bit density, and that 4F² has no sustainable scaling path beyond a certain point, with 3D DRAM ultimately coming in instead. Micron acknowledges 4F² is technically feasible and that it has manufactured experimental devices based on the architecture. A 4F² cell theoretically occupies about 33% less area than a 6F² cell and could theoretically increase memory cells per wafer by 50%, but Micron argues these theoretical advantages do not necessarily translate into higher density in practice. Micron plans to continue scaling conventional 6F² DRAM by reducing capacitor pitch and shrinking process nodes; its upcoming 1δ process technology is scheduled to enter volume production in the second half of 2027 with a mid-20% improvement in bit density compared with its predecessor, and Micron plans to adopt High-NA EUV lithography for future DRAM generations. The company is also developing multiple generations of 3D DRAM production nodes but has not disclosed when the new architecture will enter commercial production. According to TechInsights, both Samsung and SK hynix still have 4F² memory cells in their roadmaps.
DRAMMicronTom's HardwareEOL/Discontinuation
19:00Impact score 30
Allegro Introduces 48V Power and Precision Sensors for Robotics
Allegro MicroSystems announced an expansion of its robotics portfolio with 48V power management and precision position-sensing solutions designed to address key hardware challenges in humanoid robots, targeting system size, weight, thermal management, torque density, and functional safety, alongside a collaboration with Sarcomere Dynamics supporting more natural, human-like dexterity. The new A81481 power management IC (PMIC) integrates power regulation and safety monitoring in a single 6 × 6 mm package, incorporating two buck regulators, five low-dropout (LDO) outputs, and safety diagnostics including a triple-watchdog architecture; its ASIL-D-capable safety features support safety-critical designs, and according to Allegro, the A81481 can cut overall system footprint and bill-of-materials costs by approximately 50%. The A17802 and A17803 inductive position sensors provide rotor-position feedback for high-torque actuators in robotic joints such as shoulders, hips, and knees, with the A17803 also available in an ultra-compact QFN package. For robotic hands and fingers, Allegro offers the CT310 XtremeSense TMR angle sensor (sub-degree angular accuracy in a 2 × 2 mm DFN package) and the A33023 Hall-effect angle sensor. Allegro's Robotics Building Blocks program offers samples and evaluation support for the A81481, A17802, A17803, CT310, and A33023, and the company will showcase its robotics power and sensing solutions at electronica 2026, Hall C6, Booth 129. The source does not state the cause (this is a product introduction with no price or supply-demand change information).
48V power management IC (PMIC)inductive position sensorsTMR angle sensorAllegro MicroSystemsPower Electronics News
18:05Impact score 60
Hana Technology to Ship Battery Equipment to India’s Agratas in November
According to industry sources on Oct. 22, Hana Technology completed factory acceptance testing (FAT) this month for battery cell electrolyte filling and baking equipment destined for Agratas, a battery subsidiary of India's Tata Group, and the equipment will be shipped to Agratas' factory in India in November, while some assembly equipment is reportedly still under production. Hana Technology signed turnkey contracts with Agratas for battery assembly equipment worth 157.6 billion won in December 2025 and 161.5 billion won in June 2026, totaling 319.1 billion won; equipment for the first project awarded in 2025 is being manufactured and delivered in 2026. Shipments were delayed beyond initial expectations because performance verification took longer than anticipated following the first order in 2025, with a company official saying the testing period was extended by about one to two months; the company plans to begin delivering equipment for the first production line in the fourth quarter and subsequently supply equipment for additional lines in stages. Agratas' Sanand plant in Gujarat, India, has begun receiving production equipment, while its Bridgwater plant in Somerset, England, remains under construction; both facilities aim to gradually expand production capacity to 40 gigawatt-hours annually, and Agratas aims to complete equipment deliveries to its Indian factory by the first half of 2027. Hana Technology expects to recognize revenue from approximately 80 billion won worth of first-phase equipment in stages beginning in the fourth quarter (its consolidated first-half 2026 revenue was 13.6 billion won with a 10 billion won operating loss, revenue down 18 billion won and operating loss up 5.4 billion won from a year earlier); its order backlog rose to 482.5 billion won at the end of the second quarter, and if the project proceeds as planned, 2027 revenue is expected to roughly double from the 2025 level.
battery cell electrolyte filling equipmenthigh-temperature baking equipmentbattery assembly equipmentHana Technology, AgratasThe ElecCapacity Change
18:05Impact score 45
LG Innotek, Nvidia to Develop Robotic Sensing Solutions
LG Innotek said on Oct. 22 that it is working with Nvidia to develop physical AI sensing solutions, including vision sensing systems for humanoid robots and robotic hands, combining Nvidia's sensor data transmission technology with LG Innotek's camera, LiDAR, and radar technologies. LG Innotek unveiled sensing solutions incorporating Nvidia's Holoscan Sensor Bridge (HSB) technology — including a 3-megapixel (3MP) camera module and a multimodal vision system (MVS) — at GTC Berlin in Germany on Oct. 20 local time. HSB enables data collected by cameras and sensors to be transmitted directly to AI computers without passing through a CPU, and by reducing data transmission latency helps autonomous vehicles and robots perceive their surroundings and make decisions more quickly. MVS combines multiple sensors, including cameras, LiDAR and radar, to provide integrated perception of surrounding environments. The two companies plan to expand their collaboration into vision sensing for humanoid robots and robotic hands, and will develop sensing solutions compatible with Nvidia's next-generation platforms to be unveiled at CES and GTC in 2027 (a plan, not yet realized). Background: in 2025, LG Innotek collaborated with Boston Dynamics on robotic vision sensing systems; since July 2026 it has been mass-producing camera modules for a North American robotics customer; and in autonomous driving it works with U.S.-based Aeva and Applied Intuition as well as Kakao Mobility.
vision sensing systemscamera modulemultimodal vision system (MVS)LG Innotek, NvidiaThe ElecPartnership/M&A
18:05Impact score 45
POSCO Future M Adopts Palantir AI Platforms
POSCO Future M announced it signed an agreement with U.S.-based Palantir Technologies on Oct. 21 to adopt its Foundry data operations and analytics platform and its Artificial Intelligence Platform (AIP). Foundry integrates and analyzes data distributed across an organization, while AIP combines generative AI with business processes to support workflow automation and decision-making. The company plans to initially deploy the two platforms in sales and marketing to improve customer responsiveness and collaboration efficiency, and after evaluating the results will consider expanding their use to manufacturing and research and development. Through AI adoption, the company aims to improve customer responsiveness by more than 60% and manufacturing productivity by 30%, and also plans to cut product development time in half. POSCO Future M has been pursuing a company-wide AI transformation project since August, with successful internal AI use cases to undergo on-site validation before being introduced in phases through the first half of 2027.
cathode materialsPOSCO Future M, Palantir TechnologiesThe ElecPartnership/M&A
15:19Impact score 60
Chi Yi Hsin Technology's Arizona fab projects drive order backlog to NT$4.476B
Chi Yi Hsin Technology's order backlog reached NT$4.476 billion (US$137.5 million) as of the end of September 2026, driven by Arizona fab projects, with execution scheduled through around 2028 and overall order visibility extending to 2030.
order backlogChi Yi Hsin TechnologyDigiTimes AsiaInventory Shift
13:00Impact score 45
Mitsui Kinzoku, Factorial to scale all-solid-state battery manufacturing
According to a press release, US firm Factorial Energy announced on October 22, 2026 a strategic partnership with Japan-based Mitsui Kinzoku, a producer of sulfide-based solid electrolytes for all-solid-state batteries, to support the industrialization of its Solstice all-solid-state battery platform. The companies aim to accelerate the realization of next-generation batteries by leveraging Mitsui Kinzoku's long-established expertise in materials and manufacturing technologies combined with Factorial's advanced technological capabilities. Dr. Kiyotaka Yasuda, Senior Executive Officer and General Manager of the Business Creation Division of Mitsui Kinzoku Company, Limited, said he was very pleased to enter into this joint development agreement with Factorial. Factorial CEO Siyu Huang said Mitsui Kinzoku's foundational electrolyte technology brings critical materials expertise to moving Solstice toward commercial deployment. The partnership is at the announcement/planned stage; implementation of industrialization is not confirmed as complete. The article also notes background: Factorial's prior strategic investments from IQT and POSCO Future M, its first commercial orders for passenger vehicles and aerospace, expanded automotive and industrialization partnership programs, and its June 2026 Nasdaq listing under the ticker symbol FAC.
all-solid-state batteriessulfide-based solid electrolytesSolstice all-solid-state battery platformFactorial Energy, Mitsui KinzokuEvertiqPartnership/M&A
12:06Impact score 55
Why Terafab approached South Korean suppliers first
Tesla and SpaceX are reportedly negotiating with about 10 South Korean semiconductor materials, components, and equipment suppliers as Elon Musk moves ahead with Terafab. The discussions cover process materials, piping and valves, wastewater recycling equipment, and semiconductor testing components, raising questions about whether Taiwan's semiconductor supply chain will benefit from the massive expansion. The source does not state the cause.
semiconductor materialscomponentsequipmentTesla, SpaceXDigiTimes AsiaPartnership/M&A
11:11Impact score 55
Apple, Google push PCB supply chain toward net zero amid challenges
PCB makers are expanding sustainability efforts as artificial intelligence (AI) and high-performance computing (HPC) drive demand for higher-performance boards. The industry still faces obstacles in securing affordable renewable power, validating low-carbon materials, and measuring emissions across its supply chain. Industry output is expected to exceed NT$1.13 trillion (US$34.63 billion) in 2026, putting pressure on the industry to balance growth with its sustainability goals.
PCBDigiTimes AsiaCapacity Change
10:30Impact score 55
Sibelco to build quartz plant in North Carolina, extending US chip onshoring to raw materials
US Commerce Secretary Howard Lutnick announced a new investment by industrial minerals company Sibelco to build a quartz plant in North Carolina, expanding semiconductor-related manufacturing, as the Trump administration pushes to bring more of the chip supply chain onto US soil. This is an announced planned expansion; the source does not state the cause, and no capacity figures or timeline are given.
quartzSibelcoDigiTimes AsiaCapacity Change
09:10Impact score 50
Elon Musk expands South Korean supplier network for Terafab
Elon Musk's Terafab semiconductor production initiative is expanding its supplier outreach in South Korea, with Tesla and SpaceX approaching materials, components, and equipment suppliers across nearly every segment of the planned supply chain, from basic piping components and process materials to testing components. The source describes this as a planned supply chain, and the outreach targets a production initiative still in the planning stage; the source does not state the cause.
materialscomponentsequipmentTesla, SpaceXDigiTimes AsiaPartnership/M&A
06:53Impact score 55
[News] Micron Reportedly Rules Out 4F² DRAM Scaling, Backs 6F² and 3D DRAM in Next-Gen Memory Roadmap
Micron is reportedly sticking with its 6F² DRAM architecture rather than adopting 4F², even as Chinese rival CXMT advances the alternative design. According to Nikkei, Scott DeBoer, Micron's president and chief technology and products officer, said during a recent technology webinar that 4F² is not 'on the roadmap right now' after more than 20 years of evaluation; the company plans to extend its 6F² architecture while developing 3D DRAM as a longer-term alternative. DeBoer explained that DRAM bit density is primarily determined by capacitor pitch rather than cell architecture alone, and pointed to fundamental scaling limitations, greater manufacturing complexity, and higher costs associated with 4F². Roadmap details: the 1γ (1-gamma) node is already in high-volume manufacturing and will underpin products introduced over the next 12 months; the next node, 1δ (1-delta), is expected to enter volume production in the second half of 2027, targeting a bit-density improvement in the mid-20% range, and will support next-generation memory products including DDR6, LPDDR6, HBM5, and vertical HBM (vHBM); the 1ε (1-epsilon) node is being developed with wafer bonding to improve bit density and support AI applications; for the subsequent 1ζ (1-zeta) and 1η (1-eta) nodes, the company is exploring High-NA EUV, new materials, and other innovations. 3D DRAM is placed between the 1ζ and 1η nodes in the roadmap, but development is proceeding in parallel with planar DRAM, with adoption depending on cost, manufacturing complexity, and device performance. On products, Micron is preparing DDR6 and LPDDR6, targeting twice the bandwidth of DDR5 and a 35% improvement in power efficiency over LPDDR5 respectively, with greater efficiency gains at certain densities; the company also plans a 1TB RDIMM following its recent sampling of a 512GB DDR5 RDIMM. For AI applications, Micron is advancing vHBM, which stacks memory directly on processing chips to deliver substantially higher bandwidth, developing it alongside standard and custom HBM products, although thermal management remains a challenge; packaging efforts include hybrid bonding, taller HBM stacks, and improved cooling technologies. For NAND, Micron plans to ramp its Generation 11 (G11) technology in the second half of 2027; G11 targets twice the bit density of G9 NAND, 1.5 times the I/O speed, and lower data-transfer energy consumption, and will adopt wafer-on-wafer bonding and feature more than 400 layers.
DRAM6F² DRAM3D DRAMMicronTrendForce
03:35Impact score 60
Intel installs production tools at Fab 62 in Arizona, provides updates on Ohio chip fab
On 21 October 2026 (Wednesday), Intel announced that it had started installing production tools at its Fab 62 in Arizona, with the fab on track for mass production by late 2028; however, the company has not disclosed when it intends to begin high-volume production, the planned wafer processing capacity, the capital expenditures required to complete the facility, and it has not officially assigned Intel 14A to Fab 62 (Fab 62 remains unassigned, while Fab 52 has been designated for Intel 18A). Per Intel's manufacturing roadmap disclosed earlier this year, Fab 62 will be able to make chips on 18A, 18A-P, and 14A nodes. Intel also confirmed that it has integrated High-NA EUV lithography into high-volume manufacturing (HVM), used to produce select tiles for Panther Lake CPUs at its D1X fab in Oregon; Intel has not explicitly confirmed whether High-NA EUV scanners are currently used to produce the same circuits as Low-NA EUV machines. In addition, construction workers recently installed the first major structural truss at the first fab of the Ohio One complex in New Albany, Ohio, but Intel did not provide an updated construction schedule, disclose when the first fab is expected to begin operations, or reveal which process technology it will use or its estimated capacity. The source does not state the cause (this is a capacity expansion progress update, not a price or disruption event).
High-NA EUV lithographyIntel 18AIntel 18A-PIntelTom's HardwareCapacity Change
02:30Impact score 60
[Breaking] Google Reportedly Sticks With Intel EMIB-T Despite 35% Substrate Yields as HumuFish Schedule Tightens
Google reportedly remains committed to Intel's EMIB-T for HumuFish despite poor substrate yields. According to industry sources, EMIB-T substrate yields were around 35% in 3Q26, well short of the 50% target set for year-end; the reported causes are thermal expansion differences between ABF substrates and embedded silicon bridges that make precise alignment difficult during high-temperature processing, and NCF (Non-Conductive Film) applied beneath the bridges' TSVs trapping air bubbles during bonding, potentially weakening adhesion. Despite market rumors of a HumuFish delay and the possibility of a switch to TSMC's CoWoS-L, supply chain checks indicate HumuFish remains '100%' committed to EMIB-T. Intel has adjusted its substrate electroplating process, and suppliers including Ibiden, Unimicron, and Shinko continue working to improve yields. Google's TPU v9 lineup is confirmed to include three variants: Broadcom-designed WhaleFish (expected to adopt TSMC's CoWoS-L, with mass production slated for 2H27), MediaTek-designed HumuFish (set for 1H28 mass production, relying exclusively on Intel's EMIB-T), and TriggerFish (also planned to use EMIB-T, with production targeted for 2H28 or later). Per TechNews citing analyst Ming-Chi Kuo, TriggerFish is positioned as an upgraded TPU v9 with stronger inference capabilities and features three key upgrades over HumuFish: 2–3 times the SRAM capacity, an additional simulation die, and a shift to HBM4E from HumuFish's HBM4. On delays, the tape-out of Google-designed Compute Die A, built on TSMC's N2 process, has been pushed back to late October while other dies remain on schedule, and the delay is expected to push back trial production of the complete package; Commercial Times further notes the MediaTek-involved Google TPU v9 project (HumuFish) could see its tape-out pushed back to January 2027 due to design revisions, potentially delaying shipments until 1Q28. With HumuFish not slated for mass production until 1H28, the supply chain still has time to address EMIB-T's remaining issues, but a tape-out slip to January 2027 could compress that cushion.
Intel EMIB-T substratesABF substratesNCF (Non-Conductive Film)Google, Intel and 8 totalTrendForce

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Oct 23

Merck Expands Molybdenum Use to DRAM and Logic Chips

HPSP Adopts Co-CEO Structure

EU mulls sanctions reprieve for Chinese fabric-maker accused of aiding Russia

From Sequential R&D to Trusted Co-Innovation: The EPIC Model for Semiconductor Innovation

Thu, Oct 22

Navitas Launches 2300-V SiC Power Module for Grid Infrastructure

STMicroelectronics adds MasterGaN7 devices to integrated high-efficiency power family

Micron pulls the plug on future 4F² DRAM after two decades of research in dramatic shift

Allegro Introduces 48V Power and Precision Sensors for Robotics

Hana Technology to Ship Battery Equipment to India’s Agratas in November

LG Innotek, Nvidia to Develop Robotic Sensing Solutions

POSCO Future M Adopts Palantir AI Platforms

Chi Yi Hsin Technology's Arizona fab projects drive order backlog to NT$4.476B

Mitsui Kinzoku, Factorial to scale all-solid-state battery manufacturing

Why Terafab approached South Korean suppliers first

Apple, Google push PCB supply chain toward net zero amid challenges

Sibelco to build quartz plant in North Carolina, extending US chip onshoring to raw materials

Elon Musk expands South Korean supplier network for Terafab

[News] Micron Reportedly Rules Out 4F² DRAM Scaling, Backs 6F² and 3D DRAM in Next-Gen Memory Roadmap

Intel installs production tools at Fab 62 in Arizona, provides updates on Ohio chip fab

[Breaking] Google Reportedly Sticks With Intel EMIB-T Despite 35% Substrate Yields as HumuFish Schedule Tightens

Chip Teardown Lab2 opened

Component price indexNPI, vs. prior period

Trending components