Bristol installs gallium oxide MOCVD system
The University of Bristol has installed the UK's first MOCVD system dedicated to gallium oxide (Ga2O3) epitaxy for power electronics research. This academic R&D milestone is driven by the potential for Ga2O3 devices to reduce energy consumption by approximately 20% in various applications. Neutral: This is a long-term technology development with no immediate impact on commercial supply, pricing, or trading dynamics for existing power semiconductor components.
- Impact score
- 8 / 100, low impact