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Bristol installs gallium oxide MOCVD system
What happened
The University of Bristol has installed the UK's first MOCVD system dedicated to gallium oxide (Ga2O3) epitaxy for power electronics research. This academic R&D milestone is driven by the potential for Ga2O3 devices to reduce energy consumption by approximately 20% in various applications. Neutral: This is a long-term technology development with no immediate impact on commercial supply, pricing, or trading dynamics for existing power semiconductor components.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
Gallium Oxide (Ga2O3) Power Devices
R&Dtechnology-trendpower-electronics
Source and time
Source: Semiconductor Today · 4/28/2022 · View original source
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