NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Nov 4

16:38Impact score 10
HG begins production of GaN power electronics epiwafers
HG Semiconductor Ltd has commenced full-scale production of its own 6-inch GaN power electronics epiwafers, achieving this milestone three months ahead of schedule. The accelerated timeline was enabled by the technical team's experience in debugging production facilities. Neutral: This represents a long-term supply-side capacity addition for GaN materials but has no immediate, direct impact on spot market pricing or availability of finished components.
GaN Power DevicesGaN Epitaxial WafersHG Semiconductor LtdSemiconductor TodayTechnical
03:31Impact score 10
Navitas and VREMT open joint R&D lab for EV power systems and semiconductors
Navitas Semiconductor and Geely's VREMT subsidiary opened a joint R&D lab for EV power semiconductors in Ningbo, China. The lab focuses on developing GaN and SiC technologies for electric powertrains used in Geely Group brands like Zeekr and Volvo. Neutral: This long-term R&D initiative has no immediate impact on component supply, pricing, or trader decisions.
GaN Power ICsSiC SemiconductorsNavitas SemiconductorSemiconductor TodayPartnership/M&A

Wed, Nov 2

21:16Impact score 10
Navitas delivering keynote at IEEE Power Semiconductor Workshop
Navitas Semiconductor's COO/CTO delivered a keynote on next-generation semiconductor technology at the IEEE WiPDA 2022 workshop. The presentation focused on GaN and SiC power technology trends and R&D milestones. Neutral: This is a standard industry R&D update with no immediate, specific impact on supply, demand, or pricing.
GaN Power ICsSiC Power DevicesNavitas SemiconductorSemiconductor TodayTechnical

Tue, Nov 1

21:03Impact score 10
SweGaN adds chief operating officer as it scales up GaN-on-SiC epi manufacturing
Swedish firm SweGaN AB has appointed a new COO following a Series A funding round to support scaling its custom GaN-on-SiC epitaxial wafer manufacturing. The move is in response to what the company describes as explosive global market demand for its wafers used in telecom, satellite, and defense applications. Neutral: This is a company-specific operational update with no immediate, quantifiable impact on broader GaN component supply, pricing, or trader inventories.
GaN-on-SiC Epi WafersSweGaN ABSemiconductor TodayTechnical
15:42Impact score 15
Navitas showcases power semis at China power electronics conference
Navitas Semiconductor is showcasing its gallium nitride (GaN) power ICs at a major power electronics conference in China. The event serves as a platform for the company to promote its technology to the Chinese market. Neutral: This is a standard marketing activity with no immediate, quantifiable impact on supply, demand, or pricing for GaN components.
GaN Power ICsNavitas SemiconductorSemiconductor TodayProduct Launch

Mon, Oct 31

21:43Impact score 45
Vishay Intertechnology acquires MaxPower for $50m
Vishay Intertechnology has acquired fabless power semiconductor provider MaxPower Semiconductor for a base price of $50m plus up to $57.5m in contingent payments. The acquisition will integrate MaxPower's technology into Vishay's MOSFET segment, potentially strengthening its power semiconductor portfolio. Watch: This vertical integration could affect the competitive landscape and supply dynamics for power MOSFETs in the medium term.
MOSFETVishay Intertechnology, MaxPower SemiconductorSemiconductor TodayPartnership/M&A

Fri, Oct 28

21:25Impact score 10
First Solar investing $270m in R&D innovation center in Perrysburg, Ohio
First Solar is investing $270 million to build a dedicated R&D innovation center in Perrysburg, Ohio, near its existing manufacturing plant. The investment aims to advance the company's cadmium telluride (CdTe) thin-film photovoltaic technology. Neutral: This long-term R&D commitment has no immediate impact on semiconductor supply, demand, or pricing for traders.
CdTe Photovoltaic ModulesFirst Solar IncSemiconductor TodayTechnical
00:05Impact score 8
Sumitomo Electric develops N-polar GaN HEMT using Hf-based gate dielectric
Sumitomo Electric has developed an N-polar GaN HEMT using a novel Hf-based gate dielectric, presented at the 2022 IEEE BCICTS. This is a research milestone targeting future high-capacity, high-speed post-5G communications infrastructure. The announcement is a long-term R&D development with no immediate impact on component supply, pricing, or production capacity.
GaN HEMTSumitomo Electric Industries LtdSemiconductor TodayTechnical

Thu, Oct 27

02:29Impact score 10
KYOCERA AVX Salzburg and VisIC expand collaboration for GaN-based e-mobility
VisIC Technologies and KYOCERA AVX Salzburg are expanding their collaboration on GaN-based power solutions for the automotive e-mobility sector. This partnership aims to combine VisIC's GaN transistor technology with KYOCERA AVX's component manufacturing and automotive integration expertise. Neutral: This is a long-term technology and supply chain development with no immediate, quantifiable impact on component pricing or availability for traders.
GaN TransistorsAutomotive Power SemiconductorsVisIC Technologies Ltd, KYOCERA AVX SalzburgSemiconductor TodayPartnership/M&A

Wed, Oct 26

19:43Impact score 45
Avicena acquires GaN micro-LED fab and engineering team from Nanosys
Avicena has acquired a GaN micro-LED fabrication facility and engineering team from Nanosys. This move consolidates specialized micro-LED manufacturing assets under a company focused on optical interconnect technology. Watch: The acquisition could tighten supply for specialized micro-LEDs used in niche, high-value applications by concentrating production capacity.
GaN micro-LEDsAvicena, NanosysSemiconductor TodayPartnership/M&A

Tue, Oct 25

19:53Impact score 8
Aledia and QustomDot to co-develop full-color micro-LED displays
Aledia and QustomDot announced a partnership to co-develop full-color micro-LED display technology targeting the video wall and luxury TV markets. The collaboration combines Aledia's 3D GaN nanowire-on-silicon micro-LEDs with QustomDot's quantum dot color conversion technology. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or trader decisions.
micro-LEDgallium nitride nanowiresquantum dotsAledia, QustomDotSemiconductor TodayTechnical

Mon, Oct 24

20:55Impact score 15
Innoscience completes 650V GaN HEMT range
Innoscience Technology has expanded its 650V GaN HEMT portfolio with three new devices featuring on-resistances of 190mΩ, 350mΩ, and 600mΩ, available in standard DFN packages. This move completes the company's range of enhancement-mode GaN power transistors for various power applications. Neutral: The launch adds to market supply but is a routine product line expansion unlikely to cause immediate supply-demand shifts for traders.
GaN HEMTPower TransistorsInnoscience TechnologySemiconductor TodayProduct Launch

Fri, Oct 21

20:30Impact score 15
Nexperia showcasing automotive and industrial applications at electronica
Nexperia is showcasing its portfolio for automotive and industrial applications at the electronica 2022 trade fair. The event serves as a platform for the company to present its latest product developments and capabilities to potential customers. Neutral: This is a standard marketing activity with no immediate, specific impact on supply, demand, or pricing for traders.
Automotive SemiconductorsIndustrial SemiconductorsDiscrete SemiconductorsNexperiaSemiconductor TodayProduct Launch
18:38Impact score 10
Ganvix and ITRI sign phase II deal extending JV to commercialize blue-green laser technology
Ganvix and ITRI have signed a Phase II agreement to extend their joint venture focused on commercializing blue-green GaN VCSEL technology, following the development of Ganvix's first blue GaN lasers. This represents a continued R&D effort in a specialized, early-stage photonics component segment. Neutral: This is a long-term R&D milestone with no immediate impact on the supply, demand, or pricing of commercially traded electronic components.
GaN VCSELBlue-Green LaserGanvix Inc, Industrial Technology Research Institute (ITRI)Semiconductor TodayTechnical

Tue, Oct 18

16:28Impact score 10
GlobalFoundries awarded $30m in US funding for development and production of GaN-on-Si
GlobalFoundries has been awarded $30 million in US federal funding to advance the development and production of gallium nitride (GaN) on silicon at its fab in Vermont. This funding supports the US government's strategic push to bolster domestic semiconductor manufacturing capabilities in key technology areas. Neutral: This is a long-term R&D and capacity development initiative with no immediate, direct impact on component pricing or near-term supply/demand dynamics.
GaN-on-Si Power SemiconductorsGlobalFoundriesSemiconductor TodayTechnical

Fri, Oct 14

21:33Impact score 20
Silanna UV launches far UV-C 235nm and deep UV-C 255nm LEDs
Silanna UV has launched far UV-C (235nm) and deep UV-C (255nm) LEDs, claiming industry-leading performance and the highest output power for a mass-produced 235nm LED. The launch leverages the company's patented short-period superlattice (SPSL) technology to target the difficult 230-265nm wavelength range. Neutral: This is a niche product launch with no immediate, direct impact on the supply, demand, or pricing of mainstream electronic components relevant to traders.
UV-C LEDSilanna UVSemiconductor TodayProduct Launch

Wed, Oct 12

15:35Impact score 15
TRUMPF adds multi-junction option to VCSEL array portfolio
TRUMPF Photonic Components has expanded its VCSEL array portfolio by adding a multi-junction option, targeting increased demand for miniaturization in consumer electronics and automotive applications. This is a technology enhancement aimed at improving performance for specific use cases like sensing and heating. Neutral: This product launch represents a long-term technology trend rather than an immediate supply/demand shock for the broader semiconductor trading market.
VCSELTRUMPF Photonic Components GmbHSemiconductor TodayProduct Launch

Tue, Oct 11

20:38Impact score 10
Porotech unveils first ‘all-in-one’ full-color micro-LED display
Porotech announced the world's first public demonstration of an 'all-in-one' full-color micro-LED display using its proprietary porous GaN technology. This is an R&D milestone for a novel micro-LED architecture that could simplify manufacturing. Neutral: This is a long-term technology development with no immediate impact on component supply, demand, or pricing for traders.
Micro-LEDGallium Nitride (GaN)PorotechSemiconductor TodayTechnical

Mon, Oct 10

20:50Impact score 10
IQE collaborating with SK siltron on GaN epi for Asian markets
IQE plc has entered a strategic collaboration with SK siltron for the development and commercialization of compound semiconductor products, focusing on GaN epiwafer technology for Asian markets. This partnership aims to leverage IQE's epitaxy expertise with SK siltron's wafer manufacturing and regional presence. Neutral: This is a long-term R&D and market access agreement with no immediate impact on supply, demand, or pricing for traded components.
GaN epiwaferIQE plc, SK siltronSemiconductor TodayTechnical
19:55Impact score 10
Asahi Kasei demos Crystal IS UVC LED-based water disinfection
Asahi Kasei and its subsidiary Crystal IS demonstrated a UVC LED-based water reactor with over 75% higher performance than traditional mercury lamps at equivalent power. This represents an R&D milestone in improving the efficiency and potential adoption of UVC LEDs for disinfection applications. Neutral: The announcement is a technology demonstration with no immediate impact on UVC LED supply, demand, or pricing for traders.
UVC LEDAsahi Kasei, Crystal IS IncSemiconductor TodayTechnical

Analog	$0.68	−5.9%
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CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
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PMIC2026-W13	$0.44	−12.5%
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NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Nov 4

HG begins production of GaN power electronics epiwafers

Navitas and VREMT open joint R&D lab for EV power systems and semiconductors

Wed, Nov 2

Navitas delivering keynote at IEEE Power Semiconductor Workshop

Tue, Nov 1

SweGaN adds chief operating officer as it scales up GaN-on-SiC epi manufacturing

Navitas showcases power semis at China power electronics conference

Mon, Oct 31

Vishay Intertechnology acquires MaxPower for $50m

Fri, Oct 28

First Solar investing $270m in R&D innovation center in Perrysburg, Ohio

Sumitomo Electric develops N-polar GaN HEMT using Hf-based gate dielectric

Thu, Oct 27

KYOCERA AVX Salzburg and VisIC expand collaboration for GaN-based e-mobility

Wed, Oct 26

Avicena acquires GaN micro-LED fab and engineering team from Nanosys

Tue, Oct 25

Aledia and QustomDot to co-develop full-color micro-LED displays

Mon, Oct 24

Innoscience completes 650V GaN HEMT range

Fri, Oct 21

Nexperia showcasing automotive and industrial applications at electronica

Ganvix and ITRI sign phase II deal extending JV to commercialize blue-green laser technology

Tue, Oct 18

GlobalFoundries awarded $30m in US funding for development and production of GaN-on-Si

Fri, Oct 14

Silanna UV launches far UV-C 235nm and deep UV-C 255nm LEDs

Wed, Oct 12

TRUMPF adds multi-junction option to VCSEL array portfolio

Tue, Oct 11

Porotech unveils first ‘all-in-one’ full-color micro-LED display

Mon, Oct 10

IQE collaborating with SK siltron on GaN epi for Asian markets

Asahi Kasei demos Crystal IS UVC LED-based water disinfection

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