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Innoscience completes 650V GaN HEMT range
What happened
Innoscience Technology has expanded its 650V GaN HEMT portfolio with three new devices featuring on-resistances of 190mΩ, 350mΩ, and 600mΩ, available in standard DFN packages. This move completes the company's range of enhancement-mode GaN power transistors for various power applications. Neutral: The launch adds to market supply but is a routine product line expansion unlikely to cause immediate supply-demand shifts for traders.
Impact and signal
Low impactImpact score: 15/100
Affected components and suppliers
GaN HEMTPower Transistors
Innoscience Technology
product-portfolio650V
Source and time
Source: Semiconductor Today · 10/24/2022 · View original source
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