Sumitomo Electric develops N-polar GaN HEMT using Hf-based gate dielectric

What happened

Sumitomo Electric has developed an N-polar GaN HEMT using a novel Hf-based gate dielectric, presented at the 2022 IEEE BCICTS. This is a research milestone targeting future high-capacity, high-speed post-5G communications infrastructure. The announcement is a long-term R&D development with no immediate impact on component supply, pricing, or production capacity.

Impact and signal

Affected components and suppliers

Source and time

Source: Semiconductor Today · 10/27/2022 · View original source