NuAxi Stream - Real-Time Semiconductor Intelligence

Thu, Feb 8

17:39Impact score 10
UK’s £11m REWIRE Innovation and Knowledge Centre to develop wide/ultrawide-bandgap high-voltage power electronics
A UK consortium led by the University of Bristol has secured £11 million in government funding to establish the REWIRE Innovation and Knowledge Centre, focusing on wide and ultra-wide bandgap power electronics. The initiative involves major industry partners including Bosch, Siemens, ST Microelectronics, and Cambridge GaN Devices. Neutral: This is a long-term R&D project with no immediate impact on component supply, pricing, or production capacity.
Wide-Bandgap SemiconductorsUltra-Wide-Bandgap SemiconductorsHigh-Voltage Power ElectronicsCambridge GaN Devices (CGD), ST Microelectronics and 3 totalSemiconductor TodayTechnical

Tue, Feb 6

00:01Impact score 15
VMAX using Infineon’s CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching IGBT and CoolSiC Schottky diode
Infineon announced that its new CoolSiC hybrid discrete, combining a TRENCHSTOP 5 IGBT and a CoolSiC Schottky diode in a D2PAK package, has been selected by Chinese power electronics maker VMAX for its next-generation 6.6kW on-board chargers. This represents a design win for Infineon's latest power semiconductor technology in the competitive new energy vehicle market. Neutral: This is a standard product launch and design win announcement with no immediate, quantifiable impact on component supply, demand, or pricing for traders.
IGBTSiC Schottky DiodePower DiscreteInfineon Technologies AGSemiconductor TodayProduct Launch

Mon, Feb 5

23:35Impact score 20
Qorvo launches automotive-qualified 9m 750V SiC FET in D2PAK-7L package
Qorvo has launched an automotive-qualified 9mΩ 750V SiC FET in a D2PAK-7L package, claiming industry-best on-resistance. This is a new product introduction targeting the growing electric vehicle power electronics market. Neutral: This is a standard product launch with no immediate impact on supply, demand, or pricing of existing components.
SiC FETQorvo IncSemiconductor TodayProduct Launch

Wed, Jan 31

19:20Impact score 15
Teledyne e2v HiRel releases single-supply, radiation-tolerant 0.3-3GHz LNA
Teledyne e2v HiRel announced the launch of the TDLNA0430SEP, a radiation-tolerant low-noise amplifier for UHF to S-band (0.3-3GHz) space applications. This is a standard product launch targeting the niche, high-reliability space electronics market. Neutral: This announcement does not indicate a change in supply, demand, or pricing for broader semiconductor components and is unlikely to impact trading decisions.
Radiation-Tolerant LNATeledyne e2v HiRel ElectronicsSemiconductor TodayProduct Launch

Tue, Jan 30

23:39Impact score 8
QPT gains a second GaN Systems co-founder as advisor
A second co-founder of GaN Systems, Girvan Patterson, has joined fellow co-founder Geoff Haynes as an advisor to UK-based power electronics startup Quantum Power Transformation (QPT). This follows Infineon's acquisition of GaN Systems, indicating a potential talent shift towards new ventures in the GaN power semiconductor space. Neutral: This is a personnel move with no immediate impact on GaN component supply, pricing, or production capacity.
GaN Power SemiconductorsQuantum Power Transformation (QPT), GaN Systems (Infineon)Semiconductor TodayPartnership/M&A
21:35Impact score 15
Compound semiconductor substrate market growing at 17% CAGR to $3.3bn in 2029
Yole Group forecasts the compound semiconductor substrate market to grow at a 17% CAGR, reaching $3.3 billion by 2029. This growth is driven by demand from power electronics, RF devices, and photonics applications. Neutral: This is a long-term market projection without specific data on current supply constraints, price movements, or capacity changes that would trigger immediate trading action.
Compound Semiconductor SubstratesSemiconductor TodayMarket Analysis

Fri, Jan 26

21:53Impact score 10
Infineon and Anker open joint Innovation Application Center in Shenzhen
Infineon and Anker Innovations have opened a joint Innovation Application Center in Shenzhen, focused on developing more energy-efficient charging solutions. This collaboration aims to accelerate product development cycles for consumer electronics charging. Neutral: This is a long-term R&D partnership with no immediate impact on component supply, pricing, or inventory.
Power SemiconductorsGaN/SiCInfineon Technologies AGSemiconductor TodayPartnership/M&A

Tue, Jan 23

23:58Impact score 20
SemiQ debuting QSiC 1200V MOSFET modules at APEC
SemiQ Inc is launching a new portfolio of 1200V SiC MOSFET modules at APEC 2024, designed for high-density, high-efficiency power applications. The launch represents a competitive expansion in the SiC power module market but does not indicate a change in supply or demand dynamics. Neutral: This is a standard product introduction with no immediate impact on component pricing or availability.
SiC MOSFETSemiQ IncSemiconductor TodayProduct Launch

Wed, Jan 17

17:41Impact score 10
SweGaN appoints Stefan Axelsson as CFO and Anders Lundskog as R&D manager
Swedish GaN-on-SiC wafer specialist SweGaN has appointed Stefan Axelsson as CFO and Anders Lundskog as R&D manager. The appointments are part of internal management restructuring to strengthen financial and research capabilities. This has no immediate impact on GaN-on-SiC wafer supply, pricing, or trading dynamics.
GaN-on-SiC Epitaxial WafersSweGaN ABSemiconductor TodayTechnical
17:40Impact score 15
Infineon’s CoolGaN enables OMRON’s new V2X charging systems
Infineon has partnered with OMRON to supply its CoolGaN power solutions for a new, compact V2X charging system in Japan. This collaboration highlights the ongoing adoption of GaN technology in power electronics for electric vehicles and renewable energy infrastructure. Neutral: This is a specific design win for Infineon's GaN portfolio but does not indicate a near-term shift in broader supply, demand, or pricing for power semiconductors.
GaN Power DevicesPower SemiconductorsInfineon Technologies AGSemiconductor TodayProduct Launch

Mon, Jan 15

23:10Impact score 5
QPT appoints Rupert Baines as CEO
UK-based power electronics startup Quantum Power Transformation (QPT) has appointed semiconductor industry veteran Rupert Baines as its new CEO, effective April 1. The company specializes in developing next-generation gallium nitride (GaN)-based motor drives. Neutral: This leadership change at a small, private R&D firm has no immediate, direct impact on the supply, demand, or pricing of commercial electronic components.
GaN-based motor drivesQuantum Power Transformation (QPT)Semiconductor Today

Sat, Jan 13

00:51Impact score 10
QPT wins ABB Power Density Start-up Challenge for Motor Drive Products
UK startup QPT won ABB's 2023 Power Density Start-up Challenge for its qGaN technology aimed at motor drive applications. The technology claims to solve RF and overheating issues to enable high-speed GaN operation for major power savings. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or inventory.
GaN Power SemiconductorsMotor DrivesQuantum Power Transformation (QPT)Semiconductor TodayTechnical
00:40Impact score 20
KYOCERA SLD Laser unveils automotive headlight modules and FiberLight grille assembly
KYOCERA SLD Laser unveiled its Laser-based Automotive Headlight Modules and FiberLight Grille Assemblies at CES 2024. The products are based on the company's GaN laser light source technology for automotive and mobility applications. Neutral: This is a product demonstration with no immediate, quantifiable impact on semiconductor supply, demand, or pricing for traders.
GaN-based Laser DiodeKYOCERA SLD Laser IncSemiconductor TodayProduct Launch

Thu, Jan 11

21:00Impact score 45
Renesas to acquire GaN device maker Transphorm for $339m
Renesas Electronics will acquire GaN power device specialist Transphorm for approximately $339 million, representing a 35% premium to Transphorm's recent closing price. This acquisition strengthens Renesas's portfolio in high-efficiency power semiconductors, a key growth area for electric vehicles and data centers. Watch: The deal consolidates the GaN supply chain but does not immediately impact component availability or pricing.
GaN Power DevicesRenesas Electronics Corp, Transphorm IncSemiconductor TodayPartnership/M&A
17:50Impact score 15
Consumer electronics 3D sensing VCSEL market to rebound at 11% CAGR to $1.404bn in 2028
The consumer electronics 3D sensing VCSEL market declined to $847 million in 2023 due to weak demand and pricing pressure, according to TrendForce. The market is forecast to rebound at an 11% CAGR, reaching $1.404 billion by 2028. Bullish: The projected recovery indicates a future tightening of supply and potential upward price pressure for VCSEL components as demand recovers.
VCSEL (3D Sensing)Semiconductor TodayMarket Analysis

Fri, Dec 22

00:06Impact score 15
Teledyne e2v HiRel adds space-screened versions of 100V, 90A and 650V, 30A GaN HEMTs
Teledyne e2v HiRel has introduced space-screened versions of its 100V/90A and 650V/30A GaN HEMTs. This is a product line extension targeting the high-reliability space and defense electronics market. Neutral: This is a niche product launch with no immediate impact on the broader commercial GaN supply-demand or pricing dynamics relevant to most traders.
GaN HEMTSpace-Grade SemiconductorsTeledyne e2v HiRel ElectronicsSemiconductor TodayProduct Launch

Mon, Dec 18

17:24Impact score 15
Porotech partners with Foxconn to accelerate commercialization of micro-LED micro-display for AR applications
Fabless micro-LED developer Poro Technologies has entered a strategic partnership with Foxconn to accelerate the commercialization of micro-LED micro-displays for AR applications. The collaboration leverages Poro's porous GaN material technology and Foxconn's manufacturing scale. Neutral: This long-term R&D partnership has no immediate impact on component supply, pricing, or trader decisions.
micro-LED micro-displayPoro Technologies Ltd, Hon Hai Technology Group (Foxconn)Semiconductor TodayPartnership/M&A

Mon, Dec 11

18:18Impact score 10
More players exhibiting a common IP strategy for power and RF GaN technologies
A new report from KnowMade analyzes the patent landscape for both power GaN and RF GaN electronics, highlighting the IP strategies of key players across the supply chain. The study maps the global competition and emerging local ecosystems supporting GaN technology industrialization. Neutral: This is a background technology and IP trend analysis with no immediate, specific impact on component supply, demand, or pricing.
Power GaNRF GaNSemiconductor TodayTechnical
17:32Impact score 10
Status of the IP competition for vertical GaN power devices
KnowMade's latest IP report analyzes the patent landscape for vertical GaN power devices, highlighting their potential to overcome voltage and current limitations of lateral designs. This technology is positioned as promising for next-generation power applications. Neutral: This is a long-term R&D and IP analysis with no immediate impact on trading, pricing, or supply for current-generation components.
GaN Power DevicesSemiconductor TodayTechnical

Fri, Dec 8

17:03Impact score 25
Navitas powers NIO Phone with fast charging and EV interaction
Navitas Semiconductor announced its GaNFast power ICs are featured in the 66W fast charger for NIO's new NIO Phone, enhancing charging efficiency and vehicle-mobile interconnection. This represents a design win in the consumer electronics and EV accessory space for Navitas's GaN technology. Neutral: The event signals incremental demand for GaN components but is not a volume driver significant enough to shift broader market supply or pricing for power semiconductors.
GaN Power ICsNavitas Semiconductor CorpSemiconductor TodayProduct Launch

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Thu, Feb 8

UK’s £11m REWIRE Innovation and Knowledge Centre to develop wide/ultrawide-bandgap high-voltage power electronics

Tue, Feb 6

VMAX using Infineon’s CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching IGBT and CoolSiC Schottky diode

Mon, Feb 5

Qorvo launches automotive-qualified 9m 750V SiC FET in D2PAK-7L package

Wed, Jan 31

Teledyne e2v HiRel releases single-supply, radiation-tolerant 0.3-3GHz LNA

Tue, Jan 30

QPT gains a second GaN Systems co-founder as advisor

Compound semiconductor substrate market growing at 17% CAGR to $3.3bn in 2029

Fri, Jan 26

Infineon and Anker open joint Innovation Application Center in Shenzhen

Tue, Jan 23

SemiQ debuting QSiC 1200V MOSFET modules at APEC

Wed, Jan 17

SweGaN appoints Stefan Axelsson as CFO and Anders Lundskog as R&D manager

Infineon’s CoolGaN enables OMRON’s new V2X charging systems

Mon, Jan 15

QPT appoints Rupert Baines as CEO

Sat, Jan 13

QPT wins ABB Power Density Start-up Challenge for Motor Drive Products

KYOCERA SLD Laser unveils automotive headlight modules and FiberLight grille assembly

Thu, Jan 11

Renesas to acquire GaN device maker Transphorm for $339m

Consumer electronics 3D sensing VCSEL market to rebound at 11% CAGR to $1.404bn in 2028

Fri, Dec 22

Teledyne e2v HiRel adds space-screened versions of 100V, 90A and 650V, 30A GaN HEMTs

Mon, Dec 18

Porotech partners with Foxconn to accelerate commercialization of micro-LED micro-display for AR applications

Mon, Dec 11

More players exhibiting a common IP strategy for power and RF GaN technologies

Status of the IP competition for vertical GaN power devices

Fri, Dec 8

Navitas powers NIO Phone with fast charging and EV interaction

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