NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Oct 11

16:05Impact score 10
Infineon and AWL-Electricity partner to improve wireless power
Infineon Technologies has partnered with AWL-Electricity Inc., supplying its CoolGaN GS61008P power ICs for the development of advanced wireless power solutions. This collaboration focuses on R&D for industrial applications and does not indicate any immediate change in production capacity or supply. Neutral: This is a long-term technology development with no direct, near-term impact on component supply, pricing, or trader inventory decisions.
GaN Power ICsInfineon Technologies AGSemiconductor TodayTechnical

Thu, Sep 12

01:47Impact score 10
Infineon nominated for Deutscher Zukunftspreis for developing 3300V vertical-channel SiC trench MOSFET
Infineon has been nominated for a German innovation award for developing a 3300V vertical-channel SiC trench MOSFET. This is an R&D milestone for high-voltage power semiconductors used in industrial and energy applications. Neutral: This is a long-term technology recognition with no immediate impact on supply, demand, or pricing for trading.
SiC MOSFETInfineon Technologies AGSemiconductor TodayTechnical

Wed, Sep 11

21:03Impact score 10
Infineon pilots first 300mm power GaN wafer technology on existing large-scale 300mm silicon line
Infineon has developed a 300mm power GaN wafer technology on its existing high-volume 300mm silicon line, which yields 2.3 times more chips per wafer compared to 200mm wafers. This is a manufacturing process milestone aimed at scaling GaN production for the broader market. Neutral: This is a long-term R&D achievement with no immediate impact on current supply, pricing, or inventory of GaN components.
Power GaNInfineon Technologies AGSemiconductor TodayTechnical

Fri, Aug 9

20:44Impact score 12
Vitesco uses Infineon’s CoolGaN transistors to boost power density in DC–DC converters
Vitesco Technologies has selected Infineon's CoolGaN 650V transistors for its Gen5+ GaN Air DC-DC converter, achieving over 96% efficiency. This represents a design win for Infineon's GaN technology in automotive electrification applications. Neutral: This is a specific product adoption with no immediate, quantifiable impact on component supply, demand, or pricing for traders.
GaN TransistorsDC-DC ConvertersInfineon Technologies AG, Vitesco TechnologiesSemiconductor TodayTechnical

Thu, Aug 8

23:10Impact score 58
Infineon opens first phase of largest SiC power semiconductor fab in Malaysia
Infineon has officially opened the first phase of its new 200mm silicon carbide (SiC) power semiconductor fab in Kulim, Malaysia. This expansion is part of the company's strategy to capture a larger share of the fast-growing SiC market, which is driven by automotive and industrial applications. Bearish: The addition of new SiC capacity, while gradual, increases future supply and could exert downward pressure on premium SiC component pricing in the medium term.
SiC Power SemiconductorsInfineon Technologies AGSemiconductor TodayCapacity Change

Thu, Aug 1

18:53Impact score 25
Infineon launches CoolGaN Drive product family of integrated single switches and half-bridges with integrated drivers
Infineon has launched the CoolGaN Drive product family, integrating single switches and half-bridges with drivers. This launch targets compact and efficient designs for consumer and industrial applications. Neutral: The new product introduction has no immediate impact on current trading prices.
GaNPower SwitchesHalf-BridgeInfineonSemiconductor TodayProduct Launch

Mon, Jul 29

15:45Impact score 10
Infineon adds three patents to infringement lawsuit against Innoscience
Infineon has expanded its patent infringement lawsuit against Innoscience by adding claims for three additional GaN-related patents to the existing dispute in the US District Court.
GaN-on-SiliconGallium Nitride (GaN)Infineon Technologies AG, Innoscience (Zhuhai) Technology Co LtdSemiconductor TodayTechnical

Fri, Jul 19

20:22Impact score 15
Daihen uses Infineon’s 2000V SiC module in highest-power-density grid storage ground power conditioner
Daihen Corp has selected Infineon's 2000V CoolSiC power modules for its grid storage power conditioners, aiming to achieve high power density. This represents a design win for Infineon's high-voltage SiC technology in the grid infrastructure segment. Neutral: This is a specific product application with no immediate, broad impact on SiC supply, demand, or pricing for traders.
SiC Power ModuleInfineon Technologies AG, Daihen CorpSemiconductor TodayProduct Launch

Fri, Jun 21

16:59Impact score 25
Infineon launches CoolGaN 700V G4 power transistor product family
Infineon has launched its CoolGaN 700V G4 power transistor product family, targeting high-efficiency power conversion applications. This is a routine generational product refresh in the competitive GaN power semiconductor market. Neutral: The launch is a standard technology update with no immediate, direct impact on supply, demand, or pricing for traders.
GaN Power TransistorInfineon Technologies AGSemiconductor TodayProduct Launch

Thu, Jun 20

20:41Impact score 10
ST remains largest silicon carbide power device maker, with 32.6% market share
TrendForce reports STMicroelectronics maintained its leading position in the SiC power device market in 2023 with a 32.6% share, followed by onsemi, Infineon, Wolfspeed, and ROHM. The market's strong growth was primarily driven by demand from battery electric vehicles (BEVs). Neutral: This market share consolidation report provides background on competitive positioning but does not signal an immediate supply, demand, or price shock for traders.
Silicon Carbide Power DevicesSTMicroelectronics, onsemi and 5 totalSemiconductor TodayMarket Analysis

Wed, Jun 5

21:26Impact score 15
Infineon adds bidirectional switch and Smart Sense products to CoolGaN family
Infineon has expanded its CoolGaN portfolio with the launch of CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense technologies. These new products aim to improve efficiency and simplify design in power conversion applications like data centers and renewable energy. Neutral: This is a standard product portfolio expansion with no immediate, quantifiable impact on supply, demand, or pricing for existing GaN components.
GaN Power TransistorsInfineon Technologies AGSemiconductor TodayProduct Launch

Mon, Jun 3

19:52Impact score 15
Infineon adds Thin-TOLL 8x8 and TOLT packaged families to CoolSiC MOSFET discretes 650V portfolio
Infineon has expanded its 650V CoolSiC MOSFET discrete portfolio with two new product families in Thin-TOLL 8x8 and TOLT packages, aimed at improving PCB space utilization and thermal performance. This is a standard product line extension targeting specific design requirements in power electronics. Neutral: This launch adds options but does not directly alter the supply-demand balance or pricing for existing SiC MOSFETs.
650V SiC MOSFETInfineon Technologies AGSemiconductor TodayProduct Launch

Wed, May 29

19:27Impact score 25
Infineon launches CoolGaN transistor families built on 8-inch foundry processes
Infineon announced two new generations of CoolGaN transistors using 8-inch foundry processes, covering voltage classes from 40V to 700V. This expansion aims to support digitalization and decarbonization applications. (Watch)
GaN TransistorInfineon Technologies AGSemiconductor TodayProduct Launch

Tue, May 28

15:26Impact score 25
Infineon unveils CoolSiC MOSFET 400V family
Infineon has launched a new 400V CoolSiC MOSFET family targeting high-power server power supplies. The launch is driven by rising power demands from AI processors and GPUs, which are projected to consume over 2kW per chip by the end of the decade. Neutral: This is a standard product refresh with no immediate impact on supply, demand, or pricing of existing components.
SiC MOSFETServer PSUInfineon TechnologiesSemiconductor TodayProduct Launch

Wed, May 8

04:04Impact score 25
Infineon supplying silicon carbide power modules to Xiaomi EV for new SU7 smart EVs
Infineon will supply its HybridPACK Drive G2 CoolSiC power modules and bare die products to Xiaomi EV for its SU7 electric vehicle until 2027. This is a significant design win for Infineon in the competitive Chinese EV market. Neutral: This confirms strong demand for SiC in EVs but is a specific, long-term contract unlikely to cause immediate spot market price movements.
Silicon Carbide (SiC) Power ModulesInfineon Technologies AGSemiconductor TodayProduct Launch

Wed, Apr 17

21:39Impact score 15
Infineon provides Shanghai-based FOXESS with power semiconductors
Infineon Technologies will supply its CoolSiC MOSFET 1200V and IGBT7 H7 1200V power semiconductor devices to Chinese inverter maker FOXESS for use in industrial energy storage and PV inverter applications. This is a standard supply agreement between a major chipmaker and a growing system manufacturer. Neutral: This is a routine customer win announcement with no immediate, quantifiable impact on component supply, demand, or pricing for traders.
SiC MOSFET 1200VIGBT7 1200VInfineon Technologies AG, FOXESSSemiconductor TodayPartnership/M&A

Mon, Apr 15

23:56Impact score 10
Infineon receives ‘GaN Strategic Partner of the Year’ award from Chicony
Chicony Power Technology has awarded Infineon Technologies as its 2023 'GaN Strategic Partner of the Year'. This highlights a strengthening supply chain relationship in the GaN power semiconductor segment. Neutral: This is a recognition of an existing partnership with no immediate, quantifiable impact on supply, demand, or pricing for traders.
GaN Power SemiconductorsInfineon Technologies AG, Chicony Power Technology Co LtdSemiconductor TodayPartnership/M&A

Tue, Apr 9

18:01Impact score 15
Innoscience refutes Infineon’s US lawsuit alleging patent infringement
Innoscience has publicly refuted patent infringement allegations made by Infineon Technologies in a recent US lawsuit targeting three of its entities. The lawsuit centers on Gallium Nitride-on-Silicon (GaN-on-Si) power semiconductor technology, a key growth segment.
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This legal action introduces potential supply chain and market access uncertainty for Innoscience's GaN products in the US, which could benefit competitors if prolonged.
GaN-on-Si Power DevicesInnoscience, Infineon TechnologiesSemiconductor Today

Thu, Mar 14

19:55Impact score 15
Infineon files lawsuit in USA against Innoscience
Infineon has filed a patent infringement lawsuit in the US against Chinese GaN power semiconductor firm Innoscience, seeking a permanent injunction. The lawsuit targets core GaN technology related to device reliability and performance. Watch: This introduces legal uncertainty for Innoscience's US market access, potentially affecting GaN supply dynamics if successful, but has no immediate direct impact on pricing or supply.
GaN-on-Si Power SemiconductorsInfineon Technologies AG, Innoscience (Zhuhai) Technology Co LtdSemiconductor Today

Tue, Mar 12

19:39Impact score 20
Infineon launches CoolSiC MOSFETs 2000V product family
Infineon has launched its CoolSiC MOSFET 2000V product family, claiming it is the first discrete SiC device on the market with a 2000V breakdown voltage. The product targets applications requiring higher power density in solar inverters, energy storage, and EV charging. Neutral: This is a new product introduction that may shift long-term demand towards higher-voltage SiC components but has no immediate, direct impact on current trading prices or supply.
SiC MOSFETInfineon Technologies AGSemiconductor TodayProduct Launch

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