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Infineon pilots first 300mm power GaN wafer technology on existing large-scale 300mm silicon line
What happened
Infineon has developed a 300mm power GaN wafer technology on its existing high-volume 300mm silicon line, which yields 2.3 times more chips per wafer compared to 200mm wafers. This is a manufacturing process milestone aimed at scaling GaN production for the broader market. Neutral: This is a long-term R&D achievement with no immediate impact on current supply, pricing, or inventory of GaN components.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
Power GaN
Infineon Technologies AG
capacity-expansiontechnology-milestonemanufacturing
Source and time
Source: Semiconductor Today · 9/11/2024 · View original source
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