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Infineon nominated for Deutscher Zukunftspreis for developing 3300V vertical-channel SiC trench MOSFET
What happened
Infineon has been nominated for a German innovation award for developing a 3300V vertical-channel SiC trench MOSFET. This is an R&D milestone for high-voltage power semiconductors used in industrial and energy applications. Neutral: This is a long-term technology recognition with no immediate impact on supply, demand, or pricing for trading.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
SiC MOSFET
Infineon Technologies AG
R&DSiCpower-semiconductors
Source and time
Source: Semiconductor Today · 9/11/2024 · View original source
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