onsemi Unveils EliteSiC M4 SiC Platform

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onsemi has launched EliteSiC M4, its fourth-generation silicon carbide (SiC) platform based on a trench architecture designed to improve next-generation power systems. According to onsemi, the new technology delivers up to 30% higher power density and 35% lower losses than the previous generation, and is supported by more than 16 billion miles of real-world operation in automotive and industrial applications. Key enhancements include a 20% to 50% reduction in specific on-resistance (RSP), a 67% improvement in switching figures of merit in hard-switching applications, and 50% in soft-switching environments. The platform supports a wide range of packaging options, including top-side-cooled surface-mount packages and high-power modules, and is qualified for temperatures of 185°C and above for automotive, industrial, and other high-reliability applications. It targets three key markets: AI data centers, electric vehicles, and energy infrastructure including solar and energy-storage systems. The first EliteSiC M4 product, a 750 V bare die for automotive traction inverter applications, is available immediately; additional devices covering voltage ratings up to 1200 V are expected to be introduced beginning in 2027.

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Source: Power Electronics News · 11/12/2026 · View original source