Nexperia adds ultra-low-resistance GaN FETs for next-gen power density and efficiency

What happened

Nexperia B.V., a discrete device designer and manufacturer based in Nijmegen, the Netherlands (operating wafer fabs in Hamburg, Germany, and Hazel Grove, Manchester, UK), has launched new ultra-low-ohmic gallium nitride (GaN) FETs, expanding its low- and medium-voltage GaN portfolio with devices spanning 18V to 200V. The new devices combine high current capability, fast switching performance and compact thermally enhanced packages, and are designed to address power design challenges in AI data centres, humanoid robotics, battery-powered tools, renewable energy, and high-efficiency SR and DC–DC conversion, supporting increased efficiency and power density across a broad range of applications. This is an observed product launch; the source does not state any price or supply-volume impact.

Impact and signal

Affected components and suppliers

Source and time

Source: Semiconductor Today · 11/10/2026 · View original source