Micron dismisses 4F-squared DRAM as CXMT presses ahead — why Samsung, SK Hynix remain divided

What happened

Micron Technology and China's CXMT have taken sharply different approaches to next-generation DRAM scaling, exposing an industry divide over the commercial viability of 4F-squared memory-cell architecture: CXMT is advancing 4F-squared toward commercial production to improve bit density, while Micron argues that capacitor-scaling constraints undermine its cost advantages and is prioritising 6F-squared technology with a longer-term transition to 3D DRAM; Samsung Electronics and SK Hynix are pursuing alternative development paths. The source does not state any price or supply-demand impact; this is a technology-roadmap report, not an observed price or capacity event.

Impact and signal

Affected components and suppliers

Source and time

Source: DigiTimes Asia · 11/2/2026 · View original source