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3nm GAA-FET SRAM Review Evaluates Self-Heating And Radiation Hardness (SJSU, Sandia)
What happened
Researchers from San Jose State University and Sandia National Laboratories published a technical paper evaluating self-heating and radiation hardness in 3nm GAA-FET SRAM using different substrate isolation techniques. The study focuses on comparing traditional bottom dielectric isolation (BDI) with punch-through stopper (PTS) methods. Neutral: This is a technical research milestone with no immediate impact on supply or pricing.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
3nm GAA-FET SRAM
San Jose State UniversitySandia National Laboratories
R&D3nmGAASRAM
Source and time
Source: Semiconductor Engineering · 7/12/2026 · View original source
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