NuAxiSemiconductor trade intelligence
FRAM scaled to 22nm
What happened
CEA-Leti researchers have scaled FRAM to the 22nm node using a 3D capacitor architecture, achieving a cell footprint of 0.0028 μm². This technology, utilizing HZO thin films, aims to integrate into 22nm FDSOI platforms for high-density embedded memory. Neutral impact on current trading.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
FRAMFeRAMSRAMEmbedded Memory
CEA-Leti
R&DTechnologyMemory
Source and time
Source: Electronics Weekly · 6/16/2026 · View original source
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