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GaN HEMTs on diamond demonstrates twice the heat dissipation of GaN-on-SiC
What happened
A research team from Osaka Metropolitan University has fabricated GaN HEMTs on a diamond substrate, demonstrating twice the heat dissipation of GaN-on-SiC. This is a laboratory-stage R&D achievement focused on improving thermal performance for high-power applications. Neutral: This is a long-term technology milestone with no immediate impact on commercial supply, pricing, or procurement decisions for existing GaN components.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN HEMTGaN-on-SiCGaN-on-Diamond
researchthermal-managementpackaging
Source and time
Source: Semiconductor Today · 1/8/2024 · View original source
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