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Chemical Origins of Environmental Modifications to MOR Lithographic Chemistry
What happened
imec research presented at SPIE Advanced Lithography 2025 identifies atmospheric oxygen (O₂) as the primary driver of critical dimension (CD) drift in tin-based metal oxide resists (MORs) during post-exposure bake, not CO₂ or H₂O. The study uses a specialized platform to quantify the chemical mechanisms, showing O₂ accelerates ligand cleavage post-EUV exposure. Neutral: This is a fundamental R&D finding with no immediate supply, demand, or price impact for traders; it pertains to long-term process control in advanced chip manufacturing.
Impact and signal
Low impactImpact score: 7/100
Affected components and suppliers
EUV PhotoresistMetal Oxide Resist (MOR)
imec
R&DlithographyEUVprocess-control
Source and time
Source: SemiWiki · 3/25/2026 · View original source
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