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Imec unlocks lever for EUV dose reduction: oxygen injection during metal-oxide resist post-exposure bake emerges as game-changer for throughput

What happened

imec demonstrated a 15-20% improvement in EUV photoresist speed by increasing oxygen concentration during post-exposure bake, potentially boosting scanner throughput. This is an R&D milestone using a specialized research tool (BEFORCE), not a commercial production change. Neutral: No immediate impact on component supply, pricing, or trader decisions; this is a long-term process optimization study.

Impact and signal

Low impactImpact score: 8/100

Affected components and suppliers

EUV Lithography EquipmentMetal-Oxide Resists (MOR)

ASMLimec

R&DEUVthroughput

Source and time

Source: EE Journal · 2/27/2026 · View original source

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Imec unlocks lever for EUV dose reduction: oxygen injection during metal-oxide resist post-exposure bake emerges as game-changer for throughput

What happened

Impact and signal

Affected components and suppliers

Source and time

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