Onsemi has been in discussions to acquire Ferric, a New York-based startup that makes integrated voltage regulators for AI chips, for close to US$1 billion, The Information reported on October 27, citing people familiar with the matter. The report describes talks only; no confirmed agreement or completion is stated, and the source does not state the cause.
integrated voltage regulators for AI chipsOnsemi, FerricDigiTimes AsiaPartnership/M&A
Power Electronics News published a roundup of this week's articles covering practical EMI guidance for power converters, FinFET-based power devices, and simulation-driven thermal modeling for SiC and GaN converters. The roundup also lists news items: Navitas launched a 2300-V SiC power module for grid infrastructure, with the 2300 V SiC technology targeting higher efficiency and power density in AI data centers, energy storage, and grid applications; Allegro introduced 48V power management and precision position sensors for robotics, helping humanoid robots with integration, motion control, and functional safety; EPC GaN FETs enable a 4 kW high-efficiency converter, where the dual-phase EVAL-LT7930-AZ combines ADI's LT7930 controller with EPC2361 transistors for high-current power conversion; STMicroelectronics launched a QML-V qualified LVDS receiver, the RHFLVDS42, supporting data rates up to 600Mbps, 300krad(Si) radiation resistance, and 8kV ESD immunity for aerospace systems; onsemi and Sungrow target 99.3% efficiency in utility-scale BESS, where the PowerTitan 3.0 platform supports conversion units up to 450 kW and could save over 475 MWh annually in a 100 MW installation. The articles section also covers a GaN-based dual-side cooled package for 650-V GaN in 800-V AI data centers. This item is an informational roundup with no price or supply-demand data.
SiCGaNFinFETNavitas, Allegro and 9 totalPower Electronics News
This is a technical overview (background) article discussing the roles of the FinFET structure and vertical GaN in high-power electronics (industrial, EVs, AI data centers); it contains no price or supply-demand movement. Key points: FinFETs are moving from logic to the power path, with foundries such as GlobalFoundries offering FinFET processes; Empower Semiconductor (now part of Analog Devices) developed its FinFast platform around ultra-fast FinFET-based power transistors; Claros (now part of Navitas) announced it will manufacture its integrated voltage regulators (IVRs) on Samsung Foundry's US-based 14-nm FinFET process. According to Empower, its Crescendo IVRs achieve roughly 20x faster transient response than conventional solutions; by paralleling up to 50 IVRs of roughly 60 A each, more than 3,000 A can be supplied to the load, with 2x lower voltage droop, which the company says yields an additional 15% reduction in xPU power for a typical AI workload. In May 2026, Analog Devices said it had entered a definitive agreement to buy Empower Semiconductor for $1.5 billion in cash, and the acquisition closed in July 2026. On vertical GaN: in 2024 Power Integrations acquired Odyssey Semiconductor's assets to develop vertical-conduction GaN FETs with 650 V and 1,200 V blocking voltages; onsemi introduced its proprietary GaN-on-GaN vertical architecture (vGaN), saying it reduces energy loss by almost 50%, manufactured at its fab in Syracuse, NY, acquired from NexGen Power Systems at the end of 2024; in October 2025, MIT spin-out Vertical Semiconductor raised an $11 million seed round led by Playground Global, demonstrated its vertical GaN process for 100 V to 1.2 kV device classes on 8-inch wafers, and hopes to have a fully integrated product out by the end of the year. The source does not state any cause related to price impact or market supply-demand.
FinFET-based power transistors (IVRs)vertical GaN power transistorsintegrated voltage regulators (IVRs)Analog Devices, Empower Semiconductor and 10 totalPower Electronics News
Related manufacturers
Analog Devices, Empower Semiconductor, Navitas, Samsung Foundry, GlobalFoundries, onsemi, Power Integrations, Odyssey Semiconductor Technologies, Vertical Semiconductor, NexGen Power Systems
Battery storage supplier Sungrow is adopting onsemi's SiC power module technology for a 0.4% boost in inverter-level efficiency. The source title states the technology ups the efficiency of utility-scale battery storage to over 99%. Aside from the stated efficiency gain, the source does not state any other cause or conditions.
SiC power moduleutility-scale battery storage inverterSungrow, onsemiElectronic DesignPartnership/M&A
STMicroelectronics announced it has expanded its space-grade semiconductor portfolio with the RHFLVDS42, a QML-V-qualified quad low-voltage differential signaling (LVDS) receiver for high-speed data links in aerospace and space systems. The device offers data rates up to 600 Mbps, operates from a supply voltage of 2.3V to 3.6V, complies with TIA/EIA-644 and relevant JEDEC requirements, and has an input common-mode voltage range from -4V to +5V with an absolute maximum voltage rating of 4.8V. For radiation performance, according to STMicroelectronics, it provides SEL-free operation at a LET of 122.6 MeV·cm²/mg and SET- and SEU-free performance at 61.3 MeV·cm²/mg, qualifies under the RHA QML-V framework for total ionizing doses up to 300 krad (Si), and provides 8kV ESD immunity. The device is manufactured at ST's Rennes facility in France using 130nm CMOS technology, which the company says it has used in space-related applications for more than a decade, carries an EAR99 export classification, supports an operating temperature range of -55°C to +125°C, comes in a grounded-lid hermetic Flat-16 package, and a bare-die option is also available.
This is a technical review article (not a market event) describing simulation-driven thermal modeling for SiC and GaN power converters. It states that wide-bandgap (WBG) devices switch faster, offer higher breakdown voltages, and conduct with lower on-resistance per unit area, but heat is concentrated in a very small area, with local heat fluxes that can easily reach several kilowatts per square centimeter; unmanaged heat can cause thermal runaway, gate oxide degradation, solder joint cracking, and catastrophic device failure. A recent review in the MDPI journal Electronics highlighted that WBG performance is mainly constrained by the position of heat generation within the device and the effectiveness of heat dissipation from the package, rather than just the electrical characteristics of the semiconductor itself. The article notes 4H-SiC has thermal conductivity at room temperature about 3× that of silicon (about 490 W/m·K versus 150 W/m·K), but its thermal conductivity decreases significantly and nonlinearly under operation; lateral GaN HEMTs concentrate heat in a microscopic region near the gate edge, can develop local hot spots, and require high spatial resolution in the gate-drain region for thermal modeling. The described simulation toolchain has three levels: device/package-level 3D FEA/CFD simulation (e.g., Ansys Icepak, Siemens Simcenter Flotherm), reduced-order models (Cauer/Foster RC network ROMs, including Siemens' Embeddable BCI-ROM technology that allows sharing an accurate packaged-device thermal model while protecting OEMs' IP), and system-level electrothermal co-simulation. The article cites Onsemi, working with Ansys, developing a multifidelity thermal modeling process to validate SiC MOSFET power modules used in industrial applications, and describes machine-learning-based fast junction temperature estimation. The source contains no price, capacity, supply-demand, or market-change information.
According to an analysis by Chinese semiconductor news outlet ijiwei, based on data from Japanese market research firm Techno Systems Research (TSR), OmniVision captured 13% of the global CMOS image sensor (CIS) market by revenue in 2025, surpassing Samsung Electronics' 12.8% share for the first time to become the world's second-largest CIS supplier; Sony retained the top position with a 54% share. OmniVision's CIS revenue totaled approximately $3 billion in 2025; per market research firm Yole, the global CIS market reached $25.3 billion in 2025, up 9% from 2024. ijiwei attributed the ranking change to a pullback by South Korean memory chipmakers: Samsung Electronics has shifted its focus toward high-bandwidth memory (HBM), while SK hynix has effectively exited the CIS market — SK hynix withdrew in March 2025, reassigning CIS personnel to AI memory operations including HBM. Onsemi's market share was below 3%. Samsung Electronics is reportedly seeking a rebound by securing Apple as a new customer, and is reportedly preparing to produce three-layer stacked CIS chips using hybrid bonding technology for a new iPhone series at its Austin, Texas, plant starting in 2026; Apple has previously sourced all CIS chips for its iPhones from Sony.
CMOS image sensors (CIS)OmniVision, Samsung Electronics and 5 totalThe Elec
Related manufacturers
OmniVision, Samsung Electronics, Sony, SK hynix, Onsemi
onsemi and Sungrow announced the integration of onsemi's EliteSiC hybrid power module technology into Sungrow's PowerTitan 3.0 energy storage platform, targeting high-power DC-AC conversion in grid-scale storage installations. According to onsemi, the new architecture improves inverter-level efficiency by 0.4 percentage points compared with the previous-generation platform, supports power conversion units rated up to 450 kW, and achieves peak efficiency exceeding 99.3%. onsemi's analysis indicates that a 0.4% efficiency improvement could save more than 475 MWh annually in a 100 MW battery energy storage installation compared with the previous-generation module. The SiC hybrid technology combines silicon carbide and silicon power devices in a three-level inverter architecture, providing increased power density and improved thermal performance. The companies collaborated on platform development, system optimization, engineering validation, and qualification, and the adoption follows an established strategic relationship between onsemi and Sungrow.
EliteSiC hybrid power modulehigh-density power integrated modules (PIMs)onsemi, SungrowPower Electronics NewsPartnership/M&A
onsemi, an intelligent power and sensing technology firm based in Scottsdale, AZ, USA, says that its latest EliteSiC silicon carbide (SiC) hybrid power module technology has been adopted by renewable energy technology firm Sungrow for its PowerTitan 3.0 energy storage platform. The integration enables improved efficiency and enhanced system performance for utility-scale battery energy storage systems (BESS). The source does not state the cause beyond the stated efficiency and performance benefits.
EliteSiC silicon carbide (SiC) hybrid power moduleonsemi, SungrowSemiconductor Today
Onsemi said its latest EliteSiC hybrid power module is now being used in Sungrow's PowerTitan 3.0 energy storage platform, a move aimed at improving efficiency, power density, and reliability in utility-scale battery systems. The article notes the deal highlights how small gains in conversion efficiency are becoming more important as AI, electrification, and renewable energy drive electricity demand higher. The source does not state a cause beyond this stated aim.
EliteSiC hybrid power moduleOnsemi, SungrowDigiTimes AsiaPartnership/M&A
Onsemi projects AI data-center revenue to more than double by 2026, signaling a strong demand recovery. However, the lack of a major upside surprise in Q3 guidance suggests the inventory replenishment cycle has not yet fully begun.
Micron increases US investment, Apple signs $30B deal, onsemi divests assets. Industry faces 189k worker shortage and construction roadblocks. Watch: Major industry consolidation and expansion amidst supply chain constraints.
Micron Technology, Apple Inc and 3 totalSemiconductor EngineeringPartnership/M&A
onsemi VP Sam Francis confirms partnership with Innoscience for GaN technologies and notes European OEMs adopt SiC with longer design cycles than Chinese counterparts.
GaNSiCVertical GaNonsemi, Innoscience and 7 totalPower Electronics NewsPartnership/M&A
Related manufacturers
onsemi, Innoscience, NIO, Geely, Volkswagen, Mercedes-Benz, BMW
onsemi agreed to acquire Synaptics for approximately $7 billion in an all-stock deal, representing a 19% premium. The transaction aims to accelerate the transition to Physical AI and Edge AI, with expected cost synergies of $200 million.
ON Semiconductor agreed to acquire Synaptics in a $7 billion all-stock deal. The merger targets expanding edge AI capabilities in automotive, industrial, and connected devices. Traders should monitor potential supply chain integration and product line rationalization.
China's Supreme Court upheld an injunction banning Infineon from selling GaN power chips in mainland China due to patent infringement, impacting Nvidia's 800V AI-rack supply chain. This victory for Innoscience creates a supply constraint in China, likely driving up prices for GaN components.
GaN power chipsInfineon, InnoscienceTom's HardwarePolicy/Regulation
Bosch introduces third-generation SiC chips and provides samples to automakers, aiming to enhance EV efficiency and range. This technological advancement supports the growing demand for wide bandgap materials in electric vehicles and data centers. Bullish for SiC adoption.
SiC chipsPower semiconductorsBoschPower Electronics NewsProduct Launch
onsemi and Geely Auto Group are expanding their strategic partnership to integrate Silicon Carbide (SiC) technologies into next-generation EV platforms. This collaboration aims to accelerate the development of electric and hybrid vehicles by leveraging advanced power semiconductors. Bullish: The deepening integration signals sustained demand growth for SiC in the automotive sector.
Silicon Carbide (SiC)onsemi, Geely Auto GroupeeNews EuropePartnership/M&A
onsemi announced an expanded strategic collaboration with NIO to accelerate the transition to 900V EV platforms using its EliteSiC M3e technology. This builds on an existing multi-year partnership and focuses on next-generation vehicle architectures. Neutral: This is a long-term design win that may incrementally support future demand for onsemi's SiC products but has no immediate trading impact on spot prices or supply.
SiC MOSFETPower SemiconductorsonsemiSemiconductor TodayPartnership/M&A