NuAxi Stream - Real-Time Semiconductor Intelligence

Wed, Nov 16

06:18Impact score 25
CGD’s ICeGaN HEMTs available in high volume
Fabless company Cambridge GaN Devices (CGD) announced its 650V IceGaN HEMT power solutions are now available for high-volume shipment. The company claims this is the industry's first easy-to-use and scalable 650V GaN HEMT family, positioning it as a rugged platform. Neutral: This is a standard product launch that adds a new supplier to the GaN market but does not indicate an immediate shift in supply, demand, or pricing for existing components.
GaN HEMTPower ICCambridge GaN Devices Ltd (CGD)Semiconductor TodayProduct Launch
00:41Impact score 10
CGD and Neways co-developing GaN-based solar inverters
Fabless firm Cambridge GaN Devices (CGD) and electronics manufacturer Neways announced a partnership to develop GaN-based solar inverter products. The agreement was formalized at the Electronica trade show in Munich. This is a long-term R&D effort with no immediate impact on component supply, pricing, or trader inventory decisions.
GaN Power ICsSolar InvertersCambridge GaN Devices Ltd, Neways ElectronicsSemiconductor TodayTechnical

Tue, Nov 15

23:01Impact score 15
Cambridge GaN Devices secures $19m in Series B funding round
Fabless firm Cambridge GaN Devices raised $19M in Series B funding to begin mass production of its GaN transistors for power applications. The funding round was led by Parkwalk Advisors and BGF. Neutral: This is a company-specific R&D and production milestone with no immediate, direct impact on the broader component trading market.
GaN TransistorsCambridge GaN Devices LtdSemiconductor TodayProduct Launch

Thu, Nov 10

23:45Impact score 10
Ayar granted $15m for US DoD Project KANAGAWA
Ayar Labs received a $15 million multi-year prototype contract from the U.S. Department of Defense for Project KANAGAWA, focusing on co-packaged optical I/O technology. The funding, awarded via a non-traditional OTA agreement, supports the DoD's Trusted & Assured Microelectronics program. Neutral: This is a long-term R&D milestone for a niche technology with no immediate impact on commercial semiconductor supply, demand, or pricing.
Optical I/O ChipletsCo-Packaged OpticsAyar LabsSemiconductor TodayTechnical
20:30Impact score 8
France’s DIAMFAB moves to new dual business model strategy
French startup DIAMFAB, a spin-off from CNRS specializing in diamond semiconductor epilayers, announced a shift to a dual business model involving direct sales and strategic partnerships. This move aims to commercialize its diamond synthesis and doping technology for potential applications in power electronics and high-frequency devices. Neutral: This is a long-term R&D development with no immediate impact on semiconductor supply, pricing, or trader inventory decisions.
Diamond SemiconductorDIAMFABSemiconductor TodayTechnical

Wed, Nov 9

18:59Impact score 15
EPC’s GaN FETs used in Solarnative’s micro-inverter
EPC's GaN FETs have been selected by Solarnative for use in a new micro-inverter design, aiming for high power density. This represents a design win in the solar power conversion market. Neutral: This is a specific product application with no immediate, broad impact on GaN supply, demand, or pricing for traders.
GaN FETsEfficient Power Conversion Corp (EPC)Semiconductor TodayProduct Launch
18:51Impact score 15
CGD demos GaN power devices at Electronica for first time
Fabless semiconductor firm Cambridge GaN Devices (CGD) is demonstrating its GaN power devices for the first time at the Electronica 2022 trade show and conference. The company is participating to showcase its technology and discuss potential strategic partnerships. Neutral: This is a standard promotional activity for a new market entrant with no immediate impact on supply, demand, or pricing for established power semiconductor components.
GaN Power DevicesCambridge GaN Devices LtdSemiconductor TodayProduct Launch

Tue, Nov 8

16:45Impact score 15
EVG launches next-gen 200mm EVG150 automated resist processing platform
EV Group has launched a next-generation 200mm version of its EVG150 automated resist processing platform. This is an incremental equipment update for the mature 200mm wafer fab market, primarily used for MEMS, power semiconductors, and analog chips. Neutral: This is a standard product refresh with no immediate impact on component supply, demand, or pricing.
Lithography EquipmentEV GroupSemiconductor TodayProduct Launch

Wed, Nov 2

21:16Impact score 10
Navitas delivering keynote at IEEE Power Semiconductor Workshop
Navitas Semiconductor's COO/CTO delivered a keynote on next-generation semiconductor technology at the IEEE WiPDA 2022 workshop. The presentation focused on GaN and SiC power technology trends and R&D milestones. Neutral: This is a standard industry R&D update with no immediate, specific impact on supply, demand, or pricing.
GaN Power ICsSiC Power DevicesNavitas SemiconductorSemiconductor TodayTechnical

Tue, Nov 1

00:22Impact score 25
Wolfspeed to supply silicon carbide power devices for Jaguar Land Rover’s next-gen EVs
Wolfspeed has secured a strategic partnership to supply silicon carbide power devices for Jaguar Land Rover's next-generation electric vehicles. This deal signals sustained, long-term demand for SiC from the automotive sector, particularly from premium EV brands. Watch: This is incrementally bullish for SiC wafer and device pricing due to confirmed demand, but the impact is gradual and dependent on JLR's production ramp.
Silicon Carbide (SiC) Power DevicesWolfspeed IncSemiconductor TodayPartnership/M&A

Thu, Oct 27

02:29Impact score 10
KYOCERA AVX Salzburg and VisIC expand collaboration for GaN-based e-mobility
VisIC Technologies and KYOCERA AVX Salzburg are expanding their collaboration on GaN-based power solutions for the automotive e-mobility sector. This partnership aims to combine VisIC's GaN transistor technology with KYOCERA AVX's component manufacturing and automotive integration expertise. Neutral: This is a long-term technology and supply chain development with no immediate, quantifiable impact on component pricing or availability for traders.
GaN TransistorsAutomotive Power SemiconductorsVisIC Technologies Ltd, KYOCERA AVX SalzburgSemiconductor TodayPartnership/M&A

Wed, Oct 26

19:43Impact score 45
Avicena acquires GaN micro-LED fab and engineering team from Nanosys
Avicena has acquired a GaN micro-LED fabrication facility and engineering team from Nanosys. This move consolidates specialized micro-LED manufacturing assets under a company focused on optical interconnect technology. Watch: The acquisition could tighten supply for specialized micro-LEDs used in niche, high-value applications by concentrating production capacity.
GaN micro-LEDsAvicena, NanosysSemiconductor TodayPartnership/M&A

Mon, Oct 24

20:55Impact score 15
Innoscience completes 650V GaN HEMT range
Innoscience Technology has expanded its 650V GaN HEMT portfolio with three new devices featuring on-resistances of 190mΩ, 350mΩ, and 600mΩ, available in standard DFN packages. This move completes the company's range of enhancement-mode GaN power transistors for various power applications. Neutral: The launch adds to market supply but is a routine product line expansion unlikely to cause immediate supply-demand shifts for traders.
GaN HEMTPower TransistorsInnoscience TechnologySemiconductor TodayProduct Launch

Wed, Oct 19

04:07Impact score 15
Infineon’s CoolSiC power devices chosen by Bloom for Energy Server and Electrolyzer
Infineon's CoolSiC MOSFETs and diodes have been selected by Bloom Energy for use in its hydrogen-powered Energy Server and Electrolyzer. This represents a significant design win for Infineon in the growing green energy and hydrogen infrastructure market. Neutral: This is a long-term demand validation for SiC components but does not indicate an immediate change in supply, demand, or pricing dynamics for traders.
SiC MOSFETSiC DiodeInfineon Technologies AGSemiconductor TodayProduct Launch

Tue, Oct 18

19:10Impact score 10
Furukawa selects Aixtron’s AIX 2800G4 MOCVD system for opto device production
Furukawa Fitel Optical Device (FFOD) has ordered an Aixtron AIX 2800G4 MOCVD system for developing and producing GaAs and InP-based optoelectronic devices. This represents a single equipment purchase for a specific manufacturer's internal capacity. Neutral: This is a routine capital expenditure with no immediate, broad impact on component supply, pricing, or trader decisions.
GaAs-based Optoelectronic DevicesInP-based Optoelectronic DevicesFurukawa Fitel Optical Device Co LtdSemiconductor TodayTechnical

Wed, Oct 12

16:22Impact score 10
VisIC recruits senior VP of product
VisIC Technologies, an Israeli fabless GaN power device supplier for automotive, has hired Dieter Liesabeths as Senior VP of Product. This is a senior-level personnel appointment aimed at strengthening product strategy and execution. Neutral: This is a company-specific development with no immediate, quantifiable impact on GaN component supply, demand, or pricing.
GaN TransistorsPower Conversion DevicesVisIC Technologies LtdSemiconductor TodayTechnical

Thu, Oct 6

20:37Impact score 10
HexaTech investment accelerates 100mm AlN substrate program
HexaTech, a subsidiary of Stanley Electric, is accelerating its 100mm single-crystal aluminum nitride (AlN) substrate development program through increased investment in personnel and capital equipment. The company claims to be the world's leading commercial supplier of PVT-grown AlN substrates, which are critical for high-power and RF semiconductor devices. Neutral: This is a long-term R&D milestone with no immediate impact on trading dynamics for mainstream electronic components.
AlN SubstratesHexaTech Inc, Stanley Electric Co LtdSemiconductor TodayTechnical
04:54Impact score 15
SemiQ launches 1200V 40mΩ SiC MOSFET
SemiQ has launched a second-generation 1200V 40mΩ silicon carbide MOSFET, expanding its portfolio of SiC power devices. This is a standard product introduction by a smaller player in the SiC market, adding to the available supply of discrete power components. Neutral: This launch does not materially alter the supply-demand balance or pricing dynamics for SiC MOSFETs, which are dominated by larger manufacturers like Wolfspeed and STMicroelectronics.
SiC MOSFETSemiQSemiconductor TodayProduct Launch

Wed, Oct 5

21:40Impact score 60
ST to build €730m silicon carbide wafer factory in Catania, Italy
STMicroelectronics announced a €730 million investment to build an integrated silicon carbide (SiC) wafer manufacturing facility in Catania, Italy, with production starting in 2023. This move aims to secure substrate supply for the growing demand from automotive and industrial electrification. Bearish: This significant capacity expansion for a key bottleneck material (SiC substrates) increases long-term supply, potentially easing price pressures and reducing supply chain risk premiums for SiC devices.
Silicon Carbide (SiC) WafersSiC MOSFETsSiC DiodesSTMicroelectronicsSemiconductor TodayCapacity Change

Fri, Sep 30

20:33Impact score 15
RF GaAs device revenue declining in 2022 with softening of handset demand
Strategy Analytics forecasts a decline in RF GaAs device revenue for 2022, following strong growth in 2021. The primary driver is softening demand in the handset market, which is the largest application for these components. Bearish: The projected revenue decline signals weakening demand for RF GaAs components, a potential headwind for spot market pricing.
RF GaAs DevicesSemiconductor TodayMarket Analysis

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Wed, Nov 16

CGD’s ICeGaN HEMTs available in high volume

CGD and Neways co-developing GaN-based solar inverters

Tue, Nov 15

Cambridge GaN Devices secures $19m in Series B funding round

Thu, Nov 10

Ayar granted $15m for US DoD Project KANAGAWA

France’s DIAMFAB moves to new dual business model strategy

Wed, Nov 9

EPC’s GaN FETs used in Solarnative’s micro-inverter

CGD demos GaN power devices at Electronica for first time

Tue, Nov 8

EVG launches next-gen 200mm EVG150 automated resist processing platform

Wed, Nov 2

Navitas delivering keynote at IEEE Power Semiconductor Workshop

Tue, Nov 1

Wolfspeed to supply silicon carbide power devices for Jaguar Land Rover’s next-gen EVs

Thu, Oct 27

KYOCERA AVX Salzburg and VisIC expand collaboration for GaN-based e-mobility

Wed, Oct 26

Avicena acquires GaN micro-LED fab and engineering team from Nanosys

Mon, Oct 24

Innoscience completes 650V GaN HEMT range

Wed, Oct 19

Infineon’s CoolSiC power devices chosen by Bloom for Energy Server and Electrolyzer

Tue, Oct 18

Furukawa selects Aixtron’s AIX 2800G4 MOCVD system for opto device production

Wed, Oct 12

VisIC recruits senior VP of product

Thu, Oct 6

HexaTech investment accelerates 100mm AlN substrate program

SemiQ launches 1200V 40mΩ SiC MOSFET

Wed, Oct 5

ST to build €730m silicon carbide wafer factory in Catania, Italy

Fri, Sep 30

RF GaAs device revenue declining in 2022 with softening of handset demand

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