ROHM’s ultra-high-speed control IC technology maximizes performance of GaN switching devices
ROHM has developed an ultra-high-speed control IC technology designed to maximize the performance of GaN switching devices. This addresses the challenge of control IC speed becoming a bottleneck for GaN's high-speed switching characteristics. Neutral: This is a technical R&D milestone with no immediate, direct impact on supply, demand, or pricing for trading purposes.
- Related manufacturers
- ROHM Semiconductor
- Impact score
- 10 / 100, low impact