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ROHM’s ultra-high-speed control IC technology maximizes performance of GaN switching devices

What happened

ROHM has developed an ultra-high-speed control IC technology designed to maximize the performance of GaN switching devices. This addresses the challenge of control IC speed becoming a bottleneck for GaN's high-speed switching characteristics. Neutral: This is a technical R&D milestone with no immediate, direct impact on supply, demand, or pricing for trading purposes.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

GaN Power DevicesControl ICs
ROHM Semiconductor
technologyproduct-launchGaN

Source and time

Source: Semiconductor Today · 3/23/2023 · View original source

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