Enphase, Infineon Develop 900 V GaN Bidirectional Switches
Enphase Energy and Infineon Technologies have announced the deployment of 900 V gallium nitride (GaN) monolithic bidirectional switch (BDS) devices in Enphase solid-state transformer (SST) power modules, targeting AI data center power infrastructure. Enphase led the system-level development, while Infineon contributes device technology and engineering expertise through its CoolGaN portfolio; Enphase previously introduced 650 V GaN bidirectional switches into volume-production power electronics, and GaN HEMT technology is already used in its IQ9 microinverters. The technology supports Enphase's IQ Solid-State Transformer (IQ SST) platform for AI data centers and can support an 800 V unipolar DC bus instead of split ±400 V rails, and may also enable future 1,500 VDC architectures using split ±750 V generation; the 900 V devices could also benefit commercial solar inverters, supporting three-phase line-to-line designs for 480 V applications in the United States and 400 V applications in other markets. No specific quantities, prices, or timelines are stated. The devices have completed initial testing and are being integrated into IQ SST development builds, with production qualification expected to follow, so further validation is needed before the technology reaches qualified production status.
- Related manufacturers
- Enphase Energy, Infineon Technologies
- Part numbers
- IQ SST
- Impact score
- 45 / 100, medium impact