ROHM partners with Aixtron to establish in-house GaN epi
ROHM Semiconductor is partnering with Aixtron to install a G10-GaN MOCVD system at its Hamamatsu plant to produce 8-inch GaN epitaxial wafers for 650V and 100V power devices. This move establishes in-house GaN epitaxy capabilities. Traders should watch for supply stability improvements and potential cost reductions in ROHM's power device portfolio.
- Related manufacturers
- ROHM Semiconductor, Aixtron SE
- Impact score
- 60 / 100, medium impact